JPH04332173A - Planar type semiconductor device and its manufacture - Google Patents

Planar type semiconductor device and its manufacture

Info

Publication number
JPH04332173A
JPH04332173A JP10157191A JP10157191A JPH04332173A JP H04332173 A JPH04332173 A JP H04332173A JP 10157191 A JP10157191 A JP 10157191A JP 10157191 A JP10157191 A JP 10157191A JP H04332173 A JPH04332173 A JP H04332173A
Authority
JP
Japan
Prior art keywords
type semiconductor
semiconductor device
base region
outer edge
conductive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10157191A
Other versions
JP3117023B2 (en
Inventor
Katsunori Ueno
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP03101571A priority Critical patent/JP3117023B2/en
Publication of JPH04332173A publication Critical patent/JPH04332173A/en
Application granted granted Critical
Publication of JP3117023B2 publication Critical patent/JP3117023B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • H01L29/405Resistive arrangements, e.g. resistive or semi-insulating field plates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • H01L29/0696Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605Resistors with PN junctions

Abstract

PURPOSE: To improve withstand voltage characteristics by using a resistive layer at a resistivity level formable by a normal manufacturing process in a planar type semiconductor device.
CONSTITUTION: In a planar type semiconductor device 1, a second conductive type base region 6 and second conductive type outer edge region 7 are formed on the surface side of a first conductive type semiconductor layer 5 and electrically connected by a spiral resistive layer 4, which makes round of the periphery of the base region 6 toward the outer peripheral side to electrically connect the base region 6 and outer edge region 7. A depletion layer 10 is expanded from the base region 6 to the outer edge region 7 in the manner of corresponding to a potential generated by a current flowing through this resistive layer 4.
COPYRIGHT: (C)1992,JPO&Japio
JP03101571A 1991-05-07 1991-05-07 Planar type semiconductor device and manufacturing method thereof Expired - Lifetime JP3117023B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03101571A JP3117023B2 (en) 1991-05-07 1991-05-07 Planar type semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03101571A JP3117023B2 (en) 1991-05-07 1991-05-07 Planar type semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH04332173A true JPH04332173A (en) 1992-11-19
JP3117023B2 JP3117023B2 (en) 2000-12-11

Family

ID=14304094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03101571A Expired - Lifetime JP3117023B2 (en) 1991-05-07 1991-05-07 Planar type semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP3117023B2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994016462A1 (en) * 1993-01-07 1994-07-21 Harris Corporation Spiral edge passivation structure for semiconductor devices
US5714396A (en) * 1994-07-05 1998-02-03 Motorola, Inc. Method of making a high voltage planar edge termination structure
JP2000294803A (en) * 1998-11-05 2000-10-20 Fuji Electric Co Ltd Semiconductor device
JP2001044431A (en) * 1999-05-27 2001-02-16 Fuji Electric Co Ltd Semiconductor device
US6525390B2 (en) * 2000-05-18 2003-02-25 Fuji Electric Co., Ltd. MIS semiconductor device with low on resistance and high breakdown voltage
JP2010245549A (en) * 1998-11-05 2010-10-28 Fuji Electric Systems Co Ltd Semiconductor device
JP2012069961A (en) * 2011-10-18 2012-04-05 Toshiba Corp Power semiconductor device
WO2012124191A1 (en) * 2011-03-14 2012-09-20 富士電機株式会社 Semiconductor device
US8390069B2 (en) 2008-11-13 2013-03-05 Mitsubishi Electric Corporation Semiconductor device
CN103022095A (en) * 2011-09-27 2013-04-03 株式会社电装 Semiconductor device having lateral element
EP2922095A1 (en) 2014-03-20 2015-09-23 Renesas Electronics Corporation Semiconductor device
JP2016042497A (en) * 2014-08-13 2016-03-31 ルネサスエレクトロニクス株式会社 Semiconductor device and method of manufacturing the same
JP2016201415A (en) * 2015-04-08 2016-12-01 富士電機株式会社 Semiconductor device
US10134846B2 (en) 2017-02-01 2018-11-20 Fuji Electric Co., Ltd. Semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0411145A (en) * 1990-04-28 1992-01-16 Sumitomo Heavy Ind Ltd Opening/closing method for large sized spherical shape dome and its device
WO2013069408A1 (en) 2011-11-11 2013-05-16 富士電機株式会社 Semiconductor device

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994016462A1 (en) * 1993-01-07 1994-07-21 Harris Corporation Spiral edge passivation structure for semiconductor devices
US5382825A (en) * 1993-01-07 1995-01-17 Harris Corporation Spiral edge passivation structure for semiconductor devices
US5714396A (en) * 1994-07-05 1998-02-03 Motorola, Inc. Method of making a high voltage planar edge termination structure
JP2000294803A (en) * 1998-11-05 2000-10-20 Fuji Electric Co Ltd Semiconductor device
JP2010245549A (en) * 1998-11-05 2010-10-28 Fuji Electric Systems Co Ltd Semiconductor device
JP2001044431A (en) * 1999-05-27 2001-02-16 Fuji Electric Co Ltd Semiconductor device
US6525390B2 (en) * 2000-05-18 2003-02-25 Fuji Electric Co., Ltd. MIS semiconductor device with low on resistance and high breakdown voltage
US9276094B2 (en) 2008-11-13 2016-03-01 Mitsubishi Electric Corporation Semiconductor device
US8390069B2 (en) 2008-11-13 2013-03-05 Mitsubishi Electric Corporation Semiconductor device
US8853737B2 (en) 2008-11-13 2014-10-07 Mitsubishi Electric Company Semiconductor device
WO2012124191A1 (en) * 2011-03-14 2012-09-20 富士電機株式会社 Semiconductor device
US9018633B2 (en) 2011-03-14 2015-04-28 Fuji Electric Co., Ltd. Semiconductor device
JP5655932B2 (en) * 2011-03-14 2015-01-21 富士電機株式会社 Semiconductor device
CN103370791A (en) * 2011-03-14 2013-10-23 富士电机株式会社 Semiconductor device
JP2013084903A (en) * 2011-09-27 2013-05-09 Denso Corp Semiconductor device comprising lateral element
CN103022095A (en) * 2011-09-27 2013-04-03 株式会社电装 Semiconductor device having lateral element
US9136362B2 (en) 2011-09-27 2015-09-15 Denso Corporation Semiconductor device having lateral element
JP2012069961A (en) * 2011-10-18 2012-04-05 Toshiba Corp Power semiconductor device
EP2922095A1 (en) 2014-03-20 2015-09-23 Renesas Electronics Corporation Semiconductor device
US9324862B2 (en) 2014-03-20 2016-04-26 Renesas Electronics Corporation Semiconductor device
US10008561B2 (en) 2014-03-20 2018-06-26 Renesas Electronics Corporation Semiconductor device
JP2016042497A (en) * 2014-08-13 2016-03-31 ルネサスエレクトロニクス株式会社 Semiconductor device and method of manufacturing the same
JP2016201415A (en) * 2015-04-08 2016-12-01 富士電機株式会社 Semiconductor device
US10043872B2 (en) 2015-04-08 2018-08-07 Fuji Electric Co., Ltd. Semiconductor device
US10134846B2 (en) 2017-02-01 2018-11-20 Fuji Electric Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
JP3117023B2 (en) 2000-12-11

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