JPH04331920A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH04331920A JPH04331920A JP3130269A JP13026991A JPH04331920A JP H04331920 A JPH04331920 A JP H04331920A JP 3130269 A JP3130269 A JP 3130269A JP 13026991 A JP13026991 A JP 13026991A JP H04331920 A JPH04331920 A JP H04331920A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- correction line
- liquid crystal
- bus
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 35
- 238000012937 correction Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000007789 sealing Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000009191 jumping Effects 0.000 abstract 1
- 230000008439 repair process Effects 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 210000002858 crystal cell Anatomy 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136272—Auxiliary lines
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は液晶表示装置に関し、詳
細には、アクティブマトリクス型液晶表示装置のドレイ
ン断線を修復する技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly to a technique for repairing a drain disconnection in an active matrix liquid crystal display device.
【0002】0002
【従来の技術】薄膜トランジスタを備えるTV用等の液
晶表示装置はガラス基板にゲート電極、絶縁膜、アモル
ファスミリコン層、イオンをドープしたアモルファスシ
リコン層、ソース電極、およびドレイン電極を順次形成
し、ソース電極と表示電極とを接続した一画素単位の表
示領域を約30万個〜150万個単位基板上に形成して
所定の表示を行う。この液晶表示装置を製造する場合、
特に薄膜トランジスタを形成する基板製造工程にゴミ等
の付着によりドレインバスあるいはゲートバスが断線し
、かかる断線したバスの薄膜トランジスタには所定の信
号電圧が印加されず、不良品となる問題がある。かかる
問題を解決するべく、あらかじめ基板上に各バスを修正
するための修正ラインを設けて断線不良となったバスを
再生する方法が知られている。2. Description of the Related Art A liquid crystal display device for TV or the like equipped with a thin film transistor has a gate electrode, an insulating film, an amorphous silicon layer, an ion-doped amorphous silicon layer, a source electrode, and a drain electrode formed in sequence on a glass substrate. Approximately 300,000 to 1,500,000 pixel display areas each having an electrode connected to a display electrode are formed on a substrate to perform a predetermined display. When manufacturing this liquid crystal display device,
In particular, there is a problem in that a drain bus or a gate bus is disconnected due to the attachment of dust or the like during the manufacturing process of a substrate for forming a thin film transistor, and a predetermined signal voltage is not applied to the thin film transistor of the disconnected bus, resulting in a defective product. In order to solve this problem, a method is known in which a repair line for repairing each bus is provided on the board in advance to regenerate a broken bus.
【0003】図6を参照してアクティブマトリクス型液
晶表示装置のドレイン断線の修復技術を説明する。同図
は薄膜トランジスタ、画素並びに補助容量を等価回路で
示す液晶表示装置の概略平面図であって、液晶表示装置
はTFT基板(50)上に平行配列された複数のドレイ
ンバス(52a)〜(52n)、このドレインバス(5
2a)〜(52n)のそれぞれの端子(54a)〜(5
4n)、ドレインバス(52a)〜(52n)と直交す
る複数のゲートバス(56a)〜(56n)、ドレイン
バス(52a)〜(52n)とゲートバス(56a)〜
(56n)の交点毎に配列され、ドレインバス(52a
)〜(52n)、ゲートバス(56a)〜(56n)に
それぞれドレイン、ゲートが接続される薄膜トランジス
タ(58ij)、薄膜トランジスタ(58ij)のソー
スに接続続された液晶セル(60ij)および補助容量
(62ij)で表現されている。この液晶表示装置では
基板(50)上の周辺部にコの字状のドレイン修正ライ
ン(64)が形成されている。A technique for repairing a drain disconnection in an active matrix liquid crystal display device will be described with reference to FIG. This figure is a schematic plan view of a liquid crystal display device showing a thin film transistor, a pixel, and an auxiliary capacitor in an equivalent circuit. ), this drain bath (5
The respective terminals (54a) to (52n) of 2a) to (52n)
4n), a plurality of gate buses (56a) to (56n) orthogonal to the drain buses (52a) to (52n), drain buses (52a) to (52n) and gate buses (56a) to
(56n), and are arranged at each intersection of the drain bus (52a).
) to (52n), a thin film transistor (58ij) whose drain and gate are connected to the gate buses (56a) to (56n), respectively, a liquid crystal cell (60ij) connected to the source of the thin film transistor (58ij), and an auxiliary capacitor (62ij). ) is expressed. In this liquid crystal display device, a U-shaped drain correction line (64) is formed at the periphery of the substrate (50).
【0004】端子(54a)〜(54n)よりドレイン
バス(52a)〜(52n)の電位が制御される図示の
液晶表示装置において、上記したように、例えばドレイ
ンバス(52i)のa点に断線障害が発生すると、液晶
セル(60ij+1)〜(60in)が表示不能となる
。この場合、ドレインバス(52i)とドレイン修正ラ
イン(64)の2個所の交点の絶縁層(図示されていな
い)を、例えばレーザ照射によって除去すると共にドレ
インバス(52i)とドレイン修正ライン(64)を溶
融、接続すると、液晶セル(60ia)〜(60ij)
は元のドレインバス(52i)により電位制御され、液
晶セル(60ij+1)〜(60in)はドレイン修正
ライン(64)を介して電位制御される結果、ドレイン
バス(52i)が修復される。なお、複数のドレイン修
正ライン(64)を並列形成すれば複数のドレイン断線
に対応できる。In the illustrated liquid crystal display device in which the potentials of the drain buses (52a) to (52n) are controlled by the terminals (54a) to (54n), as described above, for example, a disconnection occurs at point a of the drain bus (52i). When a failure occurs, the liquid crystal cells (60ij+1) to (60in) become unable to display. In this case, the insulating layer (not shown) at the two intersections of the drain bus (52i) and the drain correction line (64) is removed, for example, by laser irradiation, and the drain bus (52i) and the drain correction line (64) are removed. When melted and connected, liquid crystal cells (60ia) to (60ij)
is potential-controlled by the original drain bus (52i), and the liquid crystal cells (60ij+1) to (60in) are potential-controlled via the drain repair line (64), so that the drain bus (52i) is repaired. Note that by forming a plurality of drain correction lines (64) in parallel, it is possible to cope with a plurality of drain disconnections.
【0005】[0005]
【発明が解決しようとする課題】本件の発明者は液晶表
示パネルを小型化するために、上記した修正ラインを液
晶表示領域内に配置した。しかし、かかる構造では、本
願発明で問題としているライン断線が生じ、レーザで修
正したとき、断線ラインが選択されて所定の信号電圧が
印加されるため、対向基板側に設けられた共通電極との
間の浮遊容量により表示品位が悪化する問題があった。SUMMARY OF THE INVENTION In order to downsize the liquid crystal display panel, the inventor of the present invention placed the above correction line within the liquid crystal display area. However, in such a structure, when the line breakage that is the problem in the present invention occurs and is repaired using a laser, the broken line is selected and a predetermined signal voltage is applied, so that the line breakage, which is the problem in the present invention, is selected and a predetermined signal voltage is applied. There was a problem that display quality deteriorated due to stray capacitance between the two.
【0006】そこで、この問題を解決するために修正ラ
インを図7に示すように、液晶表示領域外、即ち、薄膜
トランジスタ側の基板(50)の露出領域上に形成しな
ければならなかった。しかしながら、表示領域外の基板
露出領域上に修正ライン(64)が形成されているため
、例えば半田付工程において使用されるフラックスによ
りドレイン修正ライン(64)が腐食、断線するおそれ
があった。また、些細な取扱いの誤りによりドレイン修
正ライン(64)を断線させるおそれがあった。さらに
は、ドレイン修正ライン(64)の引き回しのためにT
FT基板サイズが大きくなる欠点を有する。本発明は上
記したドレイン修正ラインの保護および修復時の液晶表
示装置に対する影響を考慮してなされたものである。In order to solve this problem, a correction line had to be formed outside the liquid crystal display area, that is, on the exposed area of the substrate (50) on the thin film transistor side, as shown in FIG. However, since the repair line (64) is formed on the exposed area of the substrate outside the display area, there is a risk that the drain repair line (64) may be corroded or disconnected by flux used in the soldering process, for example. Furthermore, there was a risk that the drain correction line (64) would be disconnected due to a minor handling error. Furthermore, T
This has the disadvantage that the FT substrate size becomes large. The present invention has been made in consideration of the effects on the liquid crystal display device during protection and repair of the drain repair line described above.
【0007】[0007]
【課題を解決するための手段】本発明は、TFT基板上
のデットスペースである液晶封着シール部に修正ライン
を形成したことを主要な特徴とする。[Means for Solving the Problems] The main feature of the present invention is that a correction line is formed in a liquid crystal sealing portion which is a dead space on a TFT substrate.
【0008】[0008]
【作用】TFT基板上の液晶封着シール部に修正ライン
を形成したためTFT基板サイズが縮小されるとともに
修正ラインの耐候性が向上する。また、修復処理時のガ
ス発生および熱衝撃から液晶表示装置の機能が保護され
る。[Operation] Since the repair line is formed in the liquid crystal sealing portion on the TFT substrate, the TFT substrate size is reduced and the weather resistance of the repair line is improved. In addition, the functions of the liquid crystal display device are protected from gas generation and thermal shock during the repair process.
【0009】[0009]
【実施例】図1乃至図5を参照して本発明の一実施例を
説明する。なお、図1は実施例の概略平面図であり、図
2は側面図である。また、図3はドレイン修正ラインと
ドレインバスの交点近傍の拡大断面図であり、図4およ
び図5はドレイン復処理前後のドレイン修正ラインとド
レインバスの交点近傍の断図である。表示装置自体の構
造、機能並びにドレイン断線修復原理は従来例と変わら
ないので説明を省略する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. 1 to 5. Note that FIG. 1 is a schematic plan view of the embodiment, and FIG. 2 is a side view. Further, FIG. 3 is an enlarged cross-sectional view of the vicinity of the intersection of the drain correction line and the drain bus, and FIGS. 4 and 5 are cross-sectional views of the vicinity of the intersection of the drain correction line and the drain bus before and after the drain restoration process. The structure and function of the display device itself, as well as the principle of repairing a drain disconnection, are the same as those of the conventional example, so a description thereof will be omitted.
【0010】図1および図2を参照すると、本発明の液
晶表示装置はドレインバス(12a)〜(12n)、(
13a)〜(13n)およびその端子(14a)〜(1
4n)、(15a)〜(15n)、ドレイン修正ライン
(16)、ゲート電極(17)等が形成されたTFT基
板(10)と、対向基板(30)と、これらTFT基板
(10)と対向基板(30)を所定間隔で離間配置し、
内部に充填された液晶を封止する封着シール部(40)
から構成される。ドレインバス(12a)〜(12n)
、(13a)〜(13n)は、図示するように、TFT
基板(10)の対向辺に交互に導出される。Referring to FIGS. 1 and 2, the liquid crystal display device of the present invention has drain buses (12a) to (12n), (
13a) to (13n) and their terminals (14a) to (1
4n), (15a) to (15n), a TFT substrate (10) on which a drain correction line (16), a gate electrode (17), etc. are formed, a counter substrate (30), and a substrate facing these TFT substrates (10). The substrates (30) are arranged at predetermined intervals,
Sealing seal part (40) that seals the liquid crystal filled inside
It consists of Drain bath (12a) to (12n)
, (13a) to (13n) are TFTs as shown in the figure.
They are alternately led out to opposite sides of the substrate (10).
【0011】図3を参照すると、TFT基板(10)の
中央部から導出されたドレインバス(12a)は第1の
コンタクト(20)、第1の金属層(18)、第2のコ
ンタクト(21)を介してドレイン端子(14a)に電
気的に接続され、ドレイン修正ライン(16)とは絶縁
層(19)(22)(23)で絶縁される。Referring to FIG. 3, the drain bus (12a) led out from the center of the TFT substrate (10) connects the first contact (20), the first metal layer (18), and the second contact (21). ), and is electrically connected to the drain terminal (14a) through the drain correction line (16), and is insulated from the drain correction line (16) by insulating layers (19), (22), and (23).
【0012】第1の金属層(18)はクロム(Cr)ス
パッタによるTFTのゲート形成時に、ドレイン修正ラ
イン(16)の近傍をパターン化したものであり、絶縁
層(19)にはSiNx等をCVD形成したゲート絶縁
膜が使用される。また、絶縁層(22)(23)は同様
に形成した、それぞれアモルファスシリコン、SiNx
であり、TFTの半導体活性層およびパシベーション層
形成時に同時形成されたものである。これらの絶縁層(
22)(23)はドレイン修正ライン(16)と第1の
金属層(18)間の絶縁をより確保するために形成され
る。さらに、第1および第2のコンタクト(20)(2
1)、ドレイン修正ライン(16)はTFTのドレイン
電極、ドレインバス(12a)を形成するアルミニウム
スパッタにより形成される。このドレイン修正ライン(
16)の線巾は約50μmである。The first metal layer (18) is patterned in the vicinity of the drain correction line (16) when forming the TFT gate by chromium (Cr) sputtering, and the insulating layer (19) is made of SiNx or the like. A gate insulating film formed by CVD is used. The insulating layers (22) and (23) are made of amorphous silicon and SiNx, respectively, which were formed in the same way.
This layer was formed at the same time as the semiconductor active layer and passivation layer of the TFT. These insulating layers (
22) and (23) are formed to further ensure insulation between the drain correction line (16) and the first metal layer (18). Furthermore, first and second contacts (20) (2
1) The drain correction line (16) is formed by aluminum sputtering which forms the drain electrode and drain bus (12a) of the TFT. This drain correction line (
16) has a line width of approximately 50 μm.
【0013】図4に示すように、上述したドレイン修正
ライン(16)上には対向基板との接着を行うための接
着シール部(40)により完全密封される。本実施例で
はシール部(40)の巾は約1mm〜2mm程度である
ため複数の修正ライン(16)を設けることが可能であ
る。また、本発明ではドレイン修正ライン(16)とド
レインバス(12a)〜(12n)の上下の配置並びに
修正すべきバスは問わない。同図より、従来例に比較し
て、TFT基板(10)のサイズがドレイン修正ライン
(16)の引き回しスペースだけ縮小されているのが明
らかである。As shown in FIG. 4, the above-mentioned drain correction line (16) is completely sealed by an adhesive sealing part (40) for adhering to the counter substrate. In this embodiment, since the width of the seal portion (40) is about 1 mm to 2 mm, it is possible to provide a plurality of correction lines (16). Further, in the present invention, the vertical arrangement of the drain correction line (16) and drain buses (12a) to (12n) and the buses to be corrected are not limited. From the figure, it is clear that the size of the TFT substrate (10) is reduced by the space for routing the drain correction line (16) compared to the conventional example.
【0014】次に、図4および図5を参照してドレイン
修復処理を説明する。TFT基板(10)および対向基
板(30)の基体としてガラス基板を使用する液晶表示
装置では、TFT基板(10)および対向基板(30)
間に形成したドレイン修正ライン(16)の機械的処理
が不可能であり、従来例の説明で述べたように、YAG
等の赤外線レーザによる処理対象の蒸発、溶融が利用さ
れる。Next, drain repair processing will be explained with reference to FIGS. 4 and 5. In a liquid crystal display device that uses a glass substrate as the base of the TFT substrate (10) and the counter substrate (30), the TFT substrate (10) and the counter substrate (30)
It is impossible to mechanically process the drain correction line (16) formed between YAG
Evaporation and melting of the processing target using an infrared laser such as is used.
【0015】今、TFT基板(10)のガラス基板(1
1)の裏面より高エネルギーの赤外線レーザを照射する
と、ゲート電極材料(クロム・モリブデン)で形成され
、ドレインバスを構成する第1の金属層(18)がまず
溶融し、絶縁層(19)(22)(23)が順次、爆発
的に蒸発する。そして、この蒸発がドレイン修正ライン
(16)に達して、ドレイン修正ライン(16)が溶融
を開始すると、溶融金属の表面張力により先に溶融して
いる第1の金属層(18)の金属材料とアロイ化して、
ドレイン修正ライン(16)と第1の金属層(18)が
電気的に接続される。この修復処理は極めて短時間内に
行われ、また封着シール部(40)が存在するためガス
化の圧力および熱衝撃は緩和され液晶表示装置の機能は
損なわれない。Now, the glass substrate (1) of the TFT substrate (10)
When a high-energy infrared laser is irradiated from the back side of 1), the first metal layer (18) made of gate electrode material (chromium/molybdenum) and constituting the drain bus first melts, and the insulating layer (19) ( 22) and (23) sequentially evaporate explosively. When this evaporation reaches the drain correction line (16) and the drain correction line (16) starts melting, the surface tension of the molten metal causes the metal material of the first metal layer (18) to melt first. and alloyed with
The drain modification line (16) and the first metal layer (18) are electrically connected. This repair process is carried out within a very short time, and the presence of the sealing part (40) alleviates the gasification pressure and thermal shock, so that the function of the liquid crystal display device is not impaired.
【0016】本発明では、上記したように、デッドスペ
ースである液晶封着シール部に修正ラインが配置される
ために対極基板とTFT基板とを一体化した後、あるい
は基板間に液晶を注入し完成品とした状態でレーザ修正
が可能でありその効果は大である。また、レーザ修正後
の図5を見るとレーザ修正は1個所のように見えるが、
修正の確実性を求める場合には複数個所の修正がよい。
以上に述べた実施例では、断線が生じやすいドレインバ
スの修正について説明したが、本発明はドレインバスの
修正のみならずゲートバスの修正も同様に行える。In the present invention, as described above, since the correction line is arranged in the liquid crystal sealing part which is a dead space, the liquid crystal is injected after the counter electrode substrate and the TFT substrate are integrated or between the substrates. Laser modification is possible in the finished product, and the effect is great. Also, if you look at Figure 5 after laser correction, it looks like there is only one laser correction, but
If you want certainty in the correction, it is better to make corrections in multiple places. In the above-described embodiments, the explanation has been given to the repair of the drain bus that is likely to cause disconnection, but the present invention can also be used to repair not only the drain bus but also the gate bus.
【0017】[0017]
【発明の効果】本発明の液晶表示装置は、ドレインある
いはゲート修正ラインを、TFT基板と対向基板を所定
間隔で離間配置し、内部の充填液晶を封止する封着シー
ル部に配置、形成したためTFT基板のサイズがドレイ
ン修正ラインの引き回しスペースだけ縮小される。また
、修正ラインが密封封止されるため、機械的強度が向上
すると共に耐薬品能も向上する。[Effects of the Invention] In the liquid crystal display device of the present invention, the drain or gate correction line is arranged and formed in the sealing part that separates the TFT substrate and the counter substrate at a predetermined interval and seals the liquid crystal filled inside. The size of the TFT substrate is reduced by the space for routing the drain correction line. Furthermore, since the repair line is hermetically sealed, mechanical strength and chemical resistance are improved.
【0018】[0018]
【図1】本発明の一実施例の平面図。FIG. 1 is a plan view of an embodiment of the present invention.
【図2】実施例の側面図。FIG. 2 is a side view of the embodiment.
【図3】ドレイン修正ラインとドレインバスの交点近傍
の拡大断面図。FIG. 3 is an enlarged sectional view of the vicinity of the intersection of the drain correction line and the drain bus.
【図4】ドレイン修復前の実施例の断面図。FIG. 4 is a cross-sectional view of the embodiment before drain repair.
【図5】ドレイン修復後の実施例の断面図。FIG. 5 is a cross-sectional view of the embodiment after drain repair.
【図6】ドレイン修復を説明する液晶表示素子の等価回
路図。FIG. 6 is an equivalent circuit diagram of a liquid crystal display element explaining drain repair.
【図7】従来例の平面図。FIG. 7 is a plan view of a conventional example.
10 TFT基板 16 ドレイン修正ライン 30 対向基板 40 封着シール部 10 TFT substrate 16 Drain correction line 30 Opposite board 40 Sealing seal part
Claims (3)
ンジスタにより電位制御される表示電極を備えるTFT
基板と前記表示電極の対向電極を備える対向基板との間
隙に液晶を充填した液晶表示装置であって、TFT基板
上の、液晶封着シール部に修正ラインを配置したことを
特徴とする液晶表示装置。Claim 1: A TFT comprising a thin film transistor and a display electrode whose potential is controlled by the thin film transistor.
A liquid crystal display device in which a gap between a substrate and a counter substrate having a counter electrode of the display electrode is filled with liquid crystal, characterized in that a correction line is arranged in a liquid crystal sealing part on a TFT substrate. Device.
ンであることを特徴とする請求項1記載の液晶表示装置
。2. The liquid crystal display device according to claim 1, wherein the correction line is a drain correction line.
スとの接続をレーザ照射により行ったことを特徴とする
請求項1の液晶表示装置。3. The liquid crystal display device according to claim 1, wherein the drain correction line and the drain bus are connected by laser irradiation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3130269A JPH04331920A (en) | 1991-05-07 | 1991-05-07 | Liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3130269A JPH04331920A (en) | 1991-05-07 | 1991-05-07 | Liquid crystal display device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04331920A true JPH04331920A (en) | 1992-11-19 |
Family
ID=15030258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3130269A Pending JPH04331920A (en) | 1991-05-07 | 1991-05-07 | Liquid crystal display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04331920A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008026869A (en) * | 2006-06-21 | 2008-02-07 | Mitsubishi Electric Corp | Display device |
JP2014132356A (en) * | 2014-02-26 | 2014-07-17 | Semiconductor Energy Lab Co Ltd | Liquid crystal display device |
CN104216149A (en) * | 2014-09-30 | 2014-12-17 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display panel with repair wire structure |
US9316880B2 (en) | 1995-12-21 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
-
1991
- 1991-05-07 JP JP3130269A patent/JPH04331920A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9316880B2 (en) | 1995-12-21 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP2008026869A (en) * | 2006-06-21 | 2008-02-07 | Mitsubishi Electric Corp | Display device |
JP2014132356A (en) * | 2014-02-26 | 2014-07-17 | Semiconductor Energy Lab Co Ltd | Liquid crystal display device |
CN104216149A (en) * | 2014-09-30 | 2014-12-17 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display panel with repair wire structure |
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