JPH04313221A - Method and apparatus for deposition diffusion - Google Patents

Method and apparatus for deposition diffusion

Info

Publication number
JPH04313221A
JPH04313221A JP7795891A JP7795891A JPH04313221A JP H04313221 A JPH04313221 A JP H04313221A JP 7795891 A JP7795891 A JP 7795891A JP 7795891 A JP7795891 A JP 7795891A JP H04313221 A JPH04313221 A JP H04313221A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
deposition diffusion
apparatus
method
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7795891A
Inventor
Nobuyoshi Sato
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority to JP7795891A priority Critical patent/JPH04313221A/en
Publication of JPH04313221A publication Critical patent/JPH04313221A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To apply the title method and the title apparatus to a deposition diffusion operation used to diffuse impurities to a semiconductor wafer, especially in detail to a deposition diffusion operation of P (phosphorus) to a silicon wafer.
CONSTITUTION: According to this invention, reaction gases (e.g. POCl3 and O2) introduced into a treatment container 11 are reacted when they are irradiated with light 14; they are deposited on a semiconductor wafer 6 such as a silicon wafer; a layer which contains impurities (e.g. P2O5) is deposited on the semiconductor wafer 6. The semiconductor wafer 6 after this treatment is unloaded from the treatment container 11, and a new semiconductor wafer 6 is loaded.
COPYRIGHT: (C)1992,JPO&Japio
JP7795891A 1991-04-10 1991-04-10 Method and apparatus for deposition diffusion Pending JPH04313221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7795891A JPH04313221A (en) 1991-04-10 1991-04-10 Method and apparatus for deposition diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7795891A JPH04313221A (en) 1991-04-10 1991-04-10 Method and apparatus for deposition diffusion

Publications (1)

Publication Number Publication Date
JPH04313221A true JPH04313221A (en) 1992-11-05

Family

ID=13648498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7795891A Pending JPH04313221A (en) 1991-04-10 1991-04-10 Method and apparatus for deposition diffusion

Country Status (1)

Country Link
JP (1) JPH04313221A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5925973A (en) * 1993-11-01 1999-07-20 Matsushita Electric Industrial Co., Ltd. Electronic component and method for producing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5925973A (en) * 1993-11-01 1999-07-20 Matsushita Electric Industrial Co., Ltd. Electronic component and method for producing the same

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