JPH04311066A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPH04311066A
JPH04311066A JP7642291A JP7642291A JPH04311066A JP H04311066 A JPH04311066 A JP H04311066A JP 7642291 A JP7642291 A JP 7642291A JP 7642291 A JP7642291 A JP 7642291A JP H04311066 A JPH04311066 A JP H04311066A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
capacitor
formed
lower electrode
serve
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7642291A
Inventor
Kazuo Yudasaka
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To enable a device provided with a TFT and a capacitor to be efficiently formed by a method wherein a source, a drain, a channel, and the lower electrode of a capacitor are formed of the same material at a time, a gate insulating film and a capacitor insulating film are formed at the same time, ions are implanted into the lower electrode, and a gate electrode and the upper electrode of the capacitor are formed of the same material at a time.
CONSTITUTION: A first polycrystalline silicon 102 is formed on a glass substrate 101 to serve as the source, the drain, and the channel region of a TFT and a lower electrode region of a capacitor. Then, polycrystalline silicon is thermally oxidized for the formation of an SiO 103, which is made to serve as the gate insulating film of the TFT and the insulating film of the capacitor. Next, a resist 104 is formed excluding the lower electrode region of the capacitor. Phosphorus ions are implanted to turn a polycrystalline silicon region which is not covered with resist into a conductive layer, which is made to serve as a lower electrode region 102' of the capacitor, and the resist is removed. Then, a second polycrystalline silicon is formed to serve as a gate electrode 105 and the upper electrode 105' of the capacitor.
COPYRIGHT: (C)1992,JPO&Japio
JP7642291A 1991-04-09 1991-04-09 Semiconductor device and manufacture thereof Pending JPH04311066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7642291A JPH04311066A (en) 1991-04-09 1991-04-09 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7642291A JPH04311066A (en) 1991-04-09 1991-04-09 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH04311066A true true JPH04311066A (en) 1992-11-02

Family

ID=13604750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7642291A Pending JPH04311066A (en) 1991-04-09 1991-04-09 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH04311066A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0875925A2 (en) * 1997-04-30 1998-11-04 Samsung Electronics Co., Ltd. Method of manufacturing capacitors in integrated circuits
GB2451116A (en) * 2007-07-20 2009-01-21 X Fab Uk Ltd Polysilicon devices
US8154199B2 (en) 1997-02-17 2012-04-10 Seiko Epson Corporation Display apparatus
US8188647B2 (en) * 1997-02-17 2012-05-29 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354978B2 (en) 1997-02-17 2013-01-15 Seiko Epson Corporation Display apparatus
US8362489B2 (en) 1997-02-17 2013-01-29 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
US8154199B2 (en) 1997-02-17 2012-04-10 Seiko Epson Corporation Display apparatus
US8188647B2 (en) * 1997-02-17 2012-05-29 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
US8247967B2 (en) 1997-02-17 2012-08-21 Seiko Epson Corporation Display apparatus
EP0875925A2 (en) * 1997-04-30 1998-11-04 Samsung Electronics Co., Ltd. Method of manufacturing capacitors in integrated circuits
EP0875925A3 (en) * 1997-04-30 2000-12-27 Samsung Electronics Co., Ltd. Method of manufacturing capacitors in integrated circuits
GB2451116A (en) * 2007-07-20 2009-01-21 X Fab Uk Ltd Polysilicon devices

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