JPH04311044A - Wire bonding device - Google Patents

Wire bonding device

Info

Publication number
JPH04311044A
JPH04311044A JP3076232A JP7623291A JPH04311044A JP H04311044 A JPH04311044 A JP H04311044A JP 3076232 A JP3076232 A JP 3076232A JP 7623291 A JP7623291 A JP 7623291A JP H04311044 A JPH04311044 A JP H04311044A
Authority
JP
Japan
Prior art keywords
substrate
stocker
wire
wire bonding
casing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3076232A
Other languages
Japanese (ja)
Other versions
JP2827558B2 (en
Inventor
Isamu Morisako
勇 森迫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3076232A priority Critical patent/JP2827558B2/en
Publication of JPH04311044A publication Critical patent/JPH04311044A/en
Application granted granted Critical
Publication of JP2827558B2 publication Critical patent/JP2827558B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7801Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8501Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85013Plasma cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

PURPOSE:To clean impurities adhering on substrates prior to a wire bonding to the substrates. CONSTITUTION:A plasma cleaning device 2 is provided between a stocker 1 for substrates 10 and a wire bonder 3, whereby the substrates 10 sent out from the stocker 1 are subjected to plasma cleaning and after impurities adhering on these substrates 10 are removed, the substrates 10 are transferred to the bonder 3 and a wire bonding is excellently performed.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明はワイヤボンディング装置
に係り、ストッカーから送り出された基板を、プラズマ
クリーニング装置によりクリーニングしたうえで、ワイ
ヤボンディングするようにしたものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus, in which a substrate sent out from a stocker is cleaned by a plasma cleaning apparatus and then wire bonded.

【0002】0002

【従来の技術】半導体デバイスの製造工程において、基
板に搭載された半導体の電極と、基板の電極とをワイヤ
で接続することが行われる。このようなワイヤボンディ
ング工程において、基板の電極に不純物が付着している
と、ワイヤを電極に良好にボンディングさせることはで
きない。この不純物としては、作業者が基板を手で取り
扱った場合に付着する手脂、空気中に浮遊するガス化し
たオイル、レジストの残渣等がある。
2. Description of the Related Art In the manufacturing process of semiconductor devices, electrodes of a semiconductor mounted on a substrate are connected to electrodes of the substrate using wires. In such a wire bonding process, if impurities adhere to the electrodes of the substrate, the wires cannot be bonded to the electrodes well. These impurities include hand oils that adhere when a worker handles the substrate with his/her hands, gasified oil floating in the air, resist residue, and the like.

【0003】ワイヤボンディングに先立って、このよう
な不純物を除去するための手段として、従来、超音波洗
浄が行われていた。超音波洗浄は、基板を純水などのク
リーニング液中に浸漬し、このクリーニング液に超音波
を印加して、不純物を除去する手段である。
[0003] Ultrasonic cleaning has conventionally been used as a means to remove such impurities prior to wire bonding. Ultrasonic cleaning is a method of immersing a substrate in a cleaning liquid such as pure water and applying ultrasonic waves to the cleaning liquid to remove impurities.

【0004】0004

【発明が解決しようとする課題】ところが超音波洗浄手
段は、その後に熱風を吹き付けるなどして基板を乾燥さ
せねばならないため、手間と時間を要し、また乾燥させ
ると、クリーニング液がしみとなって基板表面に残存し
やすい等の問題点があった。
[Problems to be Solved by the Invention] However, the ultrasonic cleaning method requires the substrate to be dried by blowing hot air afterwards, which requires time and effort, and when it is dried, the cleaning liquid becomes a stain. There have been problems such as the fact that it tends to remain on the surface of the substrate.

【0005】そこで本発明は、従来手段の問題点を解消
できる手段を提供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a means that can solve the problems of the conventional means.

【0006】[0006]

【課題を解決するための手段】本発明は、基板のストッ
カーと、この基板とこの基板に搭載された半導体とをワ
イヤにより接続するワイヤボンダーと、このストッカー
とワイヤボンダーの間に配設されたプラズマクリーニン
グ装置とを備え、このプラズマクリーニング装置が、開
閉自在な真空ケーシングと、この真空ケーシングに電圧
を印加してプラズマを発生させる電源部と、この真空ケ
ーシングの内部に設けられた基板の支持手段とから成り
、且つ上記ストッカーの基板をこの支持手段へ送り出す
送り出し手段と、この支持手段上の基板を上記ワイヤボ
ンダー側へ搬送する搬送手段を設けてワイヤボンディン
グ装置を構成している。
[Means for Solving the Problems] The present invention provides a substrate stocker, a wire bonder for connecting the substrate and a semiconductor mounted on the substrate with a wire, and a wire bonder disposed between the stocker and the wire bonder. The plasma cleaning device includes a vacuum casing that can be opened and closed, a power supply unit that applies voltage to the vacuum casing to generate plasma, and a substrate supporting means provided inside the vacuum casing. A wire bonding apparatus is constructed by providing a feeding means for feeding the substrates of the stocker to the supporting means, and a conveying means for conveying the substrates on the supporting means to the wire bonder side.

【0007】[0007]

【作用】上記構成において、真空ケーシングを開いた状
態で、ストッカーから支持手段へ基板を送り出し、次い
で真空ケーシングが閉じる。次いで真空ケーシングに高
電圧が印加されて真空ケーシングの内部にプラズマが発
生し、基板に付着する不純物は除去される。
[Operation] In the above structure, the substrate is sent from the stocker to the support means with the vacuum casing open, and then the vacuum casing is closed. Next, a high voltage is applied to the vacuum casing to generate plasma inside the vacuum casing, and impurities adhering to the substrate are removed.

【0008】次いで真空ケーシングは開いて、基板はワ
イヤボンダーへ送られ、ワイヤボンディングが行われる
The vacuum casing is then opened and the substrate is sent to a wire bonder for wire bonding.

【0009】[0009]

【実施例】次に、図面を参照しながら本発明の実施例を
説明する。
Embodiments Next, embodiments of the present invention will be described with reference to the drawings.

【0010】図1はワイヤボンディング装置の全体側面
図である。このワイヤボンディング装置は、リードフレ
ームなどの基板10のストッカー1と、プラズマクリー
ニング装置2と、ワイヤボンダー3を並設して構成され
ている。基板10には半導体Pが搭載されている。
FIG. 1 is an overall side view of the wire bonding apparatus. This wire bonding apparatus includes a stocker 1 for substrates 10 such as lead frames, a plasma cleaning device 2, and a wire bonder 3 arranged side by side. A semiconductor P is mounted on the substrate 10.

【0011】ストッカー1には、基板10が段積みして
収納されている。4はストッカー1の支持板であって、
ナット5が装着されている。このナット5にはボールね
じ6が螺合している。M1はボールねじ6を回転させる
モータである。
[0011] In the stocker 1, substrates 10 are stored in stacks. 4 is a support plate for the stocker 1,
Nut 5 is attached. A ball screw 6 is screwed into this nut 5. M1 is a motor that rotates the ball screw 6.

【0012】ストッカー1の背後には、送り出し手段と
してのシリンダ7が設けられている。モータM1を駆動
して、ストッカー1を昇降させ、基板10をシリンダ7
のロッド8の前方に位置させて、ロッド8が突出すると
、基板10は前方へ押送される。
A cylinder 7 is provided behind the stocker 1 as a feeding means. Drive the motor M1 to raise and lower the stocker 1 and move the substrate 10 into the cylinder 7.
When the rod 8 is positioned in front of the rod 8 and the rod 8 protrudes, the substrate 10 is pushed forward.

【0013】プラズマクリーニング装置2は、上ケース
11aと下ケース11bから成る真空ケーシング11を
主体としている。上ケース11aはシリンダ12のロッ
ド13に支持されており、ロッド13が突没すると、上
ケース11aは昇降して、ケーシング11は開閉する。 上ケース11aと下ケース11bはアース部14により
接地されている。
The plasma cleaning device 2 mainly includes a vacuum casing 11 consisting of an upper case 11a and a lower case 11b. The upper case 11a is supported by a rod 13 of the cylinder 12, and when the rod 13 protrudes and retracts, the upper case 11a moves up and down, and the casing 11 opens and closes. The upper case 11a and the lower case 11b are grounded by a ground portion 14.

【0014】ケーシング11の内部には、基板10の支
持手段15が配設されている。この支持手段15はカソ
ードを兼務しており、電源部16により高電圧が印加さ
れる。この支持手段15にはヒータ17が埋設されてお
り、ワイヤボンディングに先立ち、基板10を加熱する
。このように、プラズマクリーニング装置2に基板10
の加熱手段であるヒータ17を設けることにより、ワイ
ヤボンディングに先立ち、段取りよく基板10を予熱で
きる。
[0014] Inside the casing 11, a support means 15 for the substrate 10 is provided. This support means 15 also serves as a cathode, and a high voltage is applied by a power supply section 16. A heater 17 is embedded in this support means 15, and heats the substrate 10 prior to wire bonding. In this way, the substrate 10 is placed in the plasma cleaning device 2.
By providing the heater 17, which is a heating means, the substrate 10 can be preheated in a convenient manner prior to wire bonding.

【0015】18は吸引パイプ、19はバルブ、28は
ポンプであって、ケーシング11内の気体を吸引して、
ケーシング11を真空にする。26,27はケーシング
11を常圧に戻すためのパイプとバルブである。20は
送気パイプ、21はバルブであって、このパイプ20か
らケーシング11内に、プラズマ放電用ガスとして、A
rガスのような不活性ガスが供給される。
18 is a suction pipe, 19 is a valve, and 28 is a pump, which sucks the gas inside the casing 11,
Vacuum the casing 11. 26 and 27 are pipes and valves for returning the casing 11 to normal pressure. 20 is an air supply pipe, 21 is a valve, and A is supplied from this pipe 20 into the casing 11 as a plasma discharge gas.
An inert gas such as r gas is supplied.

【0016】ワイヤボンダー3は、基板10のガイド手
段21と、このガイド手段21の上方に設けられたボン
ディング手段22から成っている。ボンディング手段2
2は、ホーン23と、このホーン23に保持されたキャ
ピラリツール24を備えており、このキャピラリツール
24に挿通されたワイヤ25により、基板10上の半導
体Pと基板10を接続する。ガイド手段21は、上記支
持手段15と同じレベルに設けられている。
The wire bonder 3 consists of a guide means 21 for the substrate 10 and a bonding means 22 provided above the guide means 21. Bonding means 2
2 includes a horn 23 and a capillary tool 24 held by the horn 23, and a wire 25 inserted through the capillary tool 24 connects the semiconductor P on the substrate 10 and the substrate 10. The guide means 21 are provided at the same level as the support means 15.

【0017】図2は、支持手段15上の基板10をワイ
ヤボンダー3側へ搬送する搬送手段の平面図である。3
0はアーム状の押送子であって、ナット31にはX方向
のボールねじ32が螺合している。33はボールねじ3
2を駆動するモータである。
FIG. 2 is a plan view of a conveyance means for conveying the substrate 10 on the support means 15 to the wire bonder 3 side. 3
0 is an arm-shaped pusher, and a ball screw 32 in the X direction is screwed into a nut 31. 33 is ball screw 3
This is a motor that drives 2.

【0018】モータ33は、ナット34に支持されてい
る。35はこのナット34に螺合するY方向のボールね
じ、36はモータである。
The motor 33 is supported by a nut 34. 35 is a Y-direction ball screw screwed into this nut 34, and 36 is a motor.

【0019】モータ33が駆動して、ボールねじ32が
回転すると、ナット31はこのボールねじ32に沿って
、X方向に摺動し、上記押送子30も同方向に摺動する
。またモータ36が駆動すると、ナット34はボールね
じ35に沿ってY方向に摺動し、押送子30も同方向に
摺動する。37は上記支持手段15上に設けられた基板
10のガイド部である。このように、押送子30をXY
方向へ移動させることにより、支持手段15上の基板1
0を、ワイヤボンダー3側へ搬送する。
When the motor 33 is driven and the ball screw 32 rotates, the nut 31 slides along the ball screw 32 in the X direction, and the pusher 30 also slides in the same direction. Further, when the motor 36 is driven, the nut 34 slides in the Y direction along the ball screw 35, and the pusher 30 also slides in the same direction. 37 is a guide portion of the substrate 10 provided on the support means 15. In this way, move the pusher 30 in
By moving the substrate 1 on the support means 15 in the direction
0 to the wire bonder 3 side.

【0020】本装置は上記のような構成より成り、次に
動作の説明を行う。上ケース11aを開いた状態で、シ
リンダ7のロッド8が突出することにより、ストッカー
1の基板10はケーシング11内の支持手段15上へ送
られる。次いで上ケース11aが閉じ、ケーシング11
内には真空状態になる。またパイプ20から不活性ガス
が送られ、次いで支持手段15に高周波高電圧が印加さ
れることにより、プラズマが発生する。
The present apparatus has the above-mentioned configuration, and its operation will be explained next. With the upper case 11a open, the rod 8 of the cylinder 7 protrudes, so that the substrate 10 of the stocker 1 is sent onto the support means 15 inside the casing 11. Then, the upper case 11a is closed, and the casing 11
There is a vacuum inside. Furthermore, inert gas is sent from the pipe 20, and then high frequency and high voltage is applied to the support means 15, thereby generating plasma.

【0021】またこれとともに、不活性ガスの一部はイ
オン化し、イオンはケーシング11内を激しく高速運動
して、基板10の表面に衝突し、この表面に付着する不
純物を除去する。除去された不純物は、ポンプ28によ
り吸引除去される。
At the same time, a portion of the inert gas is ionized, and the ions move violently and at high speed within the casing 11, collide with the surface of the substrate 10, and remove impurities adhering to this surface. The removed impurities are removed by suction by the pump 28.

【0022】このようにして、基板10をクリーニング
したならば、バルブ27を開いて真空状態を解除し、ケ
ーシング11内を常圧に戻す。
After cleaning the substrate 10 in this way, the valve 27 is opened to release the vacuum state and return the inside of the casing 11 to normal pressure.

【0023】次いでケース11aは上昇して、ケーシン
グ11を開く。次いでモータ36が駆動して、押送子3
0は支持手段15上の基板10の背後に伸出し(図2鎖
線参照)、次いでモータ33が駆動して、押送子30が
前進することにより、基板10はワイヤボンダー3のガ
イド手段21上へ搬送される(図2破線参照)。
Next, the case 11a is raised to open the casing 11. Next, the motor 36 is driven to push the pusher 3
0 extends behind the substrate 10 on the support means 15 (see the chain line in FIG. 2), and then the motor 33 is driven and the pusher 30 moves forward, so that the substrate 10 is moved onto the guide means 21 of the wire bonder 3. (See the broken line in Figure 2).

【0024】次いでキャピラリツール24がXY方向に
移動しながら、ワイヤボンディングが行われる。この場
合、基板10はプラズマクリーニングされて不純物が除
去されているので、良好にワイヤボンディングを行うこ
とができる。
Next, wire bonding is performed while the capillary tool 24 moves in the X and Y directions. In this case, since the substrate 10 has been plasma cleaned to remove impurities, wire bonding can be performed satisfactorily.

【0025】本発明は上記実施例に限定されないのであ
って、例えば真空ケーシングの前面と後面に開閉扉を設
け、この開閉扉を開閉して、基板10を出し入れするよ
うにしてもよい。
The present invention is not limited to the above-described embodiment; for example, opening and closing doors may be provided on the front and rear surfaces of the vacuum casing, and the substrate 10 may be taken in and taken out by opening and closing the opening and closing doors.

【0026】[0026]

【発明の効果】以上説明したように本発明は、基板のス
トッカーと、この基板とこの基板に搭載された半導体と
をワイヤにより接続するワイヤボンダーと、このストッ
カーとワイヤボンダーの間に配設されたプラズマクリー
ニング装置とを備え、このプラズマクリーニング装置が
、開閉自在な真空ケーシングと、この真空ケーシングに
電圧を印加してプラズマを発生させる電源部と、この真
空ケーシングの内部に設けられた基板の支持手段とから
成り、且つ上記ストッカーの基板をこの支持手段へ送り
出す送り出し手段と、この支持手段上の基板を上記ワイ
ヤボンダー側へ搬送する搬送手段を設けてワイヤボンデ
ィング装置を構成しているので、ワイヤボンディング工
程に先立って、基板に付着する不純物を作業性良く且つ
きれいに除去し、良好にワイヤボンディングを行うこと
ができる。
[Effects of the Invention] As explained above, the present invention provides a substrate stocker, a wire bonder that connects the substrate and a semiconductor mounted on the substrate with a wire, and a wire bonder disposed between the stocker and the wire bonder. This plasma cleaning device is equipped with a vacuum casing that can be opened and closed, a power supply unit that applies voltage to the vacuum casing to generate plasma, and a substrate support provided inside the vacuum casing. The wire bonding apparatus comprises a feeding means for feeding the substrate of the stocker to the supporting means, and a conveying means for conveying the substrate on the supporting means to the wire bonder side. Prior to the bonding process, impurities adhering to the substrate can be removed cleanly and with good workability, and wire bonding can be performed satisfactorily.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明に係るワイヤボンディング装置の全体側
面図
FIG. 1: Overall side view of a wire bonding device according to the present invention.

【図2】本発明に係る搬送手段の平面図[Fig. 2] A plan view of the conveying means according to the present invention.

【符号の説明】[Explanation of symbols]

1  ストッカー 2  プラズマクリーニング装置 3  ワイヤボンダー 7  シリンダ 10  基板 11  ケーシング 15  支持手段 16  電源部 30  押送子 1 Stocker 2 Plasma cleaning device 3 Wire bonder 7 Cylinder 10 Substrate 11 Casing 15 Support means 16 Power supply section 30 Pushko

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】基板のストッカーと、この基板とこの基板
に搭載された半導体とをワイヤにより接続するワイヤボ
ンダーと、このストッカーとワイヤボンダーの間に配設
されたプラズマクリーニング装置とを備え、このプラズ
マクリーニング装置が、開閉自在な真空ケーシングと、
この真空ケーシングに電圧を印加してプラズマを発生さ
せる電源部と、この真空ケーシングの内部に設けられた
基板の支持手段とから成り、且つ上記ストッカーの基板
をこの支持手段へ送り出す送り出し手段と、この支持手
段上の基板を上記ワイヤボンダー側へ搬送する搬送手段
を設けたことを特徴とするワイヤボンディング装置。
Claim 1: A substrate stocker, a wire bonder for connecting the substrate and a semiconductor mounted on the substrate with a wire, and a plasma cleaning device disposed between the stocker and the wire bonder. The plasma cleaning device has a vacuum casing that can be opened and closed,
It consists of a power supply unit that applies a voltage to the vacuum casing to generate plasma, a substrate support means provided inside the vacuum casing, and a delivery device that sends out the substrates of the stocker to the support means; A wire bonding apparatus comprising a conveyance means for conveying the substrate on the support means to the wire bonder side.
JP3076232A 1991-04-09 1991-04-09 Wire bonding apparatus and wire bonding method Expired - Lifetime JP2827558B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3076232A JP2827558B2 (en) 1991-04-09 1991-04-09 Wire bonding apparatus and wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3076232A JP2827558B2 (en) 1991-04-09 1991-04-09 Wire bonding apparatus and wire bonding method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP8256101A Division JP2828066B2 (en) 1996-09-27 1996-09-27 Plasma cleaning equipment for substrates

Publications (2)

Publication Number Publication Date
JPH04311044A true JPH04311044A (en) 1992-11-02
JP2827558B2 JP2827558B2 (en) 1998-11-25

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Family Applications (1)

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Country Status (1)

Country Link
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10223725A (en) * 1997-02-10 1998-08-21 Matsushita Electric Ind Co Ltd Plasma cleaning device of wafer
US6709522B1 (en) 2000-07-11 2004-03-23 Nordson Corporation Material handling system and methods for a multichamber plasma treatment system
US6808592B1 (en) 1994-12-05 2004-10-26 Nordson Corporation High throughput plasma treatment system
US6841033B2 (en) 2001-03-21 2005-01-11 Nordson Corporation Material handling system and method for a multi-workpiece plasma treatment system
US6972071B1 (en) 1999-07-13 2005-12-06 Nordson Corporation High-speed symmetrical plasma treatment system
US20120111925A1 (en) * 2010-11-05 2012-05-10 Raytheon Company Reducing Formation Of Oxide On Solder
CN102790003A (en) * 2012-07-13 2012-11-21 深圳市因沃客科技有限公司 Double blanking mechanism of full-automatic solid crystal machine

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495576A (en) * 1972-05-02 1974-01-18
JPS59167026A (en) * 1983-03-14 1984-09-20 Toshiba Corp Manufacture of semiconductor device
JPH02181452A (en) * 1989-01-05 1990-07-16 Sumitomo Electric Ind Ltd Wire bonding device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495576A (en) * 1972-05-02 1974-01-18
JPS59167026A (en) * 1983-03-14 1984-09-20 Toshiba Corp Manufacture of semiconductor device
JPH02181452A (en) * 1989-01-05 1990-07-16 Sumitomo Electric Ind Ltd Wire bonding device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6808592B1 (en) 1994-12-05 2004-10-26 Nordson Corporation High throughput plasma treatment system
US7201823B2 (en) 1994-12-05 2007-04-10 Nordson Corporation High throughput plasma treatment system
JPH10223725A (en) * 1997-02-10 1998-08-21 Matsushita Electric Ind Co Ltd Plasma cleaning device of wafer
US6972071B1 (en) 1999-07-13 2005-12-06 Nordson Corporation High-speed symmetrical plasma treatment system
US6709522B1 (en) 2000-07-11 2004-03-23 Nordson Corporation Material handling system and methods for a multichamber plasma treatment system
US6841033B2 (en) 2001-03-21 2005-01-11 Nordson Corporation Material handling system and method for a multi-workpiece plasma treatment system
US20120111925A1 (en) * 2010-11-05 2012-05-10 Raytheon Company Reducing Formation Of Oxide On Solder
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
CN102790003A (en) * 2012-07-13 2012-11-21 深圳市因沃客科技有限公司 Double blanking mechanism of full-automatic solid crystal machine

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