JPH0430478A - Span voltage temperature compensating method of semiconductor pressure sensor - Google Patents
Span voltage temperature compensating method of semiconductor pressure sensorInfo
- Publication number
- JPH0430478A JPH0430478A JP13570890A JP13570890A JPH0430478A JP H0430478 A JPH0430478 A JP H0430478A JP 13570890 A JP13570890 A JP 13570890A JP 13570890 A JP13570890 A JP 13570890A JP H0430478 A JPH0430478 A JP H0430478A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- resistance
- pressure sensor
- span voltage
- temperature compensation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 238000009966 trimming Methods 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体圧力センサのスパン電圧温度補償方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a span voltage temperature compensation method for a semiconductor pressure sensor.
従来の圧力センサのスパン電圧補償方法の一例を説明す
るための回路図を第２図に示し説明する。A circuit diagram for explaining an example of a conventional span voltage compensation method for a pressure sensor is shown in FIG. 2 and will be described.
図において、１１は圧カセンサ累子、１２はオペアンプ
、１３は厚膜抵抗１３ａ（Ｒｅ）と拡散抵抗１３ｂ（Ｒ
ｂ）との合成であるフィードバック抵抗（Ｒｒ）である
。In the figure, 11 is a pressure sensor resistor, 12 is an operational amplifier, and 13 is a thick film resistor 13a (Re) and a diffused resistor 13b (R
b) is the feedback resistance (Rr).
そして、圧力センサのスパン電圧は負の温度特性を持っ
ておシ、下記α）式のように表わされる。The span voltage of the pressure sensor has a negative temperature characteristic and is expressed as the following equation α).
第３図にスパン電圧の温度特性を示す。Figure 3 shows the temperature characteristics of span voltage.
ただし、Ｋｏ ：定数、Ｖｌ ニブリッジ電圧。However, Ko: constant, Vl: bridge voltage.
Ｐ：圧力、β：温度係数、Ｔ：温度
また、厚膜抵抗１３＆（Ｒｅ）とオペアンプ２内の拡散
抵抗１３ｂ（Ｒｂ）との合成であるフィードバック抵抗
（合成抵抗） ｔ ３ （Ｒｆ）は下記（２）式のよう
に表わされる。拡散抵抗Ｒｂ２合成抵抗Ｒｆ、厚膜抵抗
Ｒｅの温度特性を第４図に示す。P: Pressure, β: Temperature coefficient, T: Temperature Also, the feedback resistance (combined resistance) t 3 (Rf), which is a combination of the thick film resistor 13 & (Re) and the diffused resistance 13b (Rb) in the operational amplifier 2, is as follows. It is expressed as in equation (2). FIG. 4 shows the temperature characteristics of the diffused resistance Rb2, the combined resistance Rf, and the thick film resistance Re.
・・・（２）
ただし、ＲｃミｎＲ１）６
Ｒｂ＝ Ｒｂ ６ （１＋αＴ）
ここで、第２図に示すオペアンプ２のゲインは下記（３
）式のように表わされ、この（３）式を０）式に掛ける
と（４）式となる。...(2) However, RcminR1)6 Rb=Rb6 (1+αT) Here, the gain of the operational amplifier 2 shown in Fig. 2 is as follows (3
), and multiplying equation (3) by equation (0) yields equation (4).
・・・（４）
この■）式および第４図よシ合成抵抗Ｒｆは正の温度係
数を持っており、β＝α′ にすることによりスパン電
圧の温度補償ができる。...(4) According to equation (2) and FIG. 4, the composite resistance Rf has a positive temperature coefficient, and by setting β=α', temperature compensation of the span voltage can be performed.
そこで、ロッド毎に拡散抵抗１３ｂ（Ｒｂ）の温度特性
の先行評価を行い、拡散抵抗１ａｂ（Ｒｂ）の抵抗値お
よび温度係数を算出する。そして、この拡散抵抗１３ｂ
（Ｒｂ）の温度係数を使い、拡散抵抗Ｒｂと厚膜抵抗Ｒ
ｃの合成抵抗Ｒｆの温度係数α′がβと等しくなるよう
に厚膜抵抗Ｒｃの抵抗値を算出する。Therefore, a preliminary evaluation of the temperature characteristics of the diffused resistor 13b (Rb) is performed for each rod, and the resistance value and temperature coefficient of the diffused resistor 1ab (Rb) are calculated. And this diffused resistance 13b
Using the temperature coefficient of (Rb), diffused resistance Rb and thick film resistance R
The resistance value of the thick film resistor Rc is calculated so that the temperature coefficient α' of the combined resistance Rf of c is equal to β.
これによす厚膜抵抗Ｒｃの抵抗値を決定する。Based on this, the resistance value of the thick film resistor Rc is determined.
上述した従来の圧力センサのスパン電圧温度補償方法で
は、温度補償用の厚膜抵抗Ｒｅを拡散抵抗Ｊ、のロット
毎に先行評価により決定しておシ、ロット内の拡散抵抗
ＩＪ、の値が変化した場合最適な温度補償が行えないと
いう課題があった。In the conventional pressure sensor span voltage temperature compensation method described above, the thick film resistor Re for temperature compensation is determined for each lot of the diffused resistor J by preliminary evaluation, and the value of the diffused resistor IJ in the lot is There was a problem that optimal temperature compensation could not be performed when the temperature changed.
この発明はかかる課題を解決するためになされたもので
、より精度良くスパン電圧温度補償を行うことができる
半導体圧力センサのスパン電圧補償方法を得ることを目
的とする。The present invention was made to solve this problem, and an object thereof is to obtain a span voltage compensation method for a semiconductor pressure sensor that can perform span voltage temperature compensation with higher accuracy.
この発明による半導体圧力センサのスパン電圧温度補償
方法は、圧力センサのスパン電圧温度補償用抵抗を、フ
ァンクショントリミングにより各センサ毎に調整し、ス
パン電圧の温度補償を高精度に行うようにしたものであ
る。The span voltage temperature compensation method for a semiconductor pressure sensor according to the present invention is such that the span voltage temperature compensation resistor of the pressure sensor is adjusted for each sensor by function trimming, and the span voltage temperature compensation is performed with high precision. be.
この発明においては、各センサ毎の厚膜抵抗値を拡散抵
抗Ｒ１，に対応する抵抗値に設定することにより、補償
がより高精度になる。In the present invention, compensation becomes more accurate by setting the thick film resistance value of each sensor to the resistance value corresponding to the diffused resistance R1.
以下、図面に基づきこの発明の実施例を詳細に説明する
。Hereinafter, embodiments of the present invention will be described in detail based on the drawings.
第１図はこの発明による半導体圧力センサのスパン電圧
温度補償方法の一実施例を説明するための回路図である
。FIG. 1 is a circuit diagram for explaining an embodiment of the span voltage temperature compensation method for a semiconductor pressure sensor according to the present invention.
この第１図において、１は圧カセンサ累子、２祉オペア
ンプ、３は既知の厚膜抵抗３ ａ （Ｒａ）と拡散抵抗
３ｂ（Ｒｂ）の合成であるフィードバック抵抗（ＲＸ）
である。In this Figure 1, 1 is a pressure sensor resistor, 2 is an operational amplifier, and 3 is a feedback resistor (RX) which is a combination of a known thick film resistor 3a (Ra) and a diffused resistor 3b (Rb).
It is.
つぎにこの第１図に示す実施例のスパン電圧温度補償方
法について説明する。Next, the span voltage temperature compensation method of the embodiment shown in FIG. 1 will be explained.
まず、各センサ毎に既知の厚膜抵抗３ａ（Ｒ１）とオペ
アンプ２内の拡散抵抗３ｂ（Ｒｂ）の合成であるフィー
ドバック抵抗（合成抵抗）３（ＲＸ）の抵抗値を測定し
、拡散抵抗３ｂ（Ｒｂ）の温度係数および抵抗値を算出
する。First, for each sensor, measure the resistance value of the feedback resistor (combined resistance) 3 (RX), which is a combination of the known thick film resistor 3a (R1) and the diffused resistor 3b (Rb) in the operational amplifier 2, and Calculate the temperature coefficient and resistance value of (Rb).
つぎに、この拡散抵抗３ｂ（Ｒｂ）の温度係数および抵
抗値を用い、厚膜抵抗ａ ｍ （Ｒａ）と拡散抵抗３ｂ
（Ｒｂ）の合成であるフィードバック抵抗（合成抵抗）
３（ＲＸ）の温度係数がβと等しくなるように厚膜抵抗
３ａ（ｕａ）の最適値を算出する。Next, using the temperature coefficient and resistance value of this diffused resistor 3b (Rb), thick film resistor a m (Ra) and diffused resistor 3b
(Rb) feedback resistance (combined resistance)
The optimum value of the thick film resistor 3a (ua) is calculated so that the temperature coefficient of 3(RX) is equal to β.
そして、既知の厚膜抵抗３ａ（Ｒ，）をファンクション
トリミングし最適値にする。Then, the known thick film resistor 3a (R,) is functionally trimmed to an optimum value.
このように、この発明は、圧力センサのスパン電圧温度
補償用抵抗を、ファンクショントリミングにより各セン
サ毎に調整し、スパン電圧の温度補償を高精度に行うよ
うに構成されている。In this manner, the present invention is configured to adjust the span voltage temperature compensation resistor of the pressure sensor for each sensor by function trimming, and to perform temperature compensation of the span voltage with high precision.
この発明は以上説明したとおシ、各センサ毎にオペアン
プ内の拡散抵抗Ｒｂを測定し、その抵抗値に対応した厚
膜抵抗を決定するように構成したので、各センサ毎に厚
膜抵抗Ｒａを最適値にすることでよル精度良く圧力セン
サのスパン電圧温度補償を行うことができる効果がある
。As described above, this invention is configured to measure the diffused resistance Rb in the operational amplifier for each sensor and determine the thick film resistance corresponding to the resistance value, so that the thick film resistance Ra can be determined for each sensor. Setting the optimal value has the effect of making it possible to perform span voltage temperature compensation of the pressure sensor with high accuracy.
第１図はこの発明による半導体圧力センサのスパン電圧
温度補償方法の一実施例を説明するための回路図、第２
図は従来の圧力センサのスパン電圧温度補償方法の一例
を説明するための回路図、第３図はスパン電圧の温度特
性を示す図、第４図は拡散抵抗１合成抵抗、厚膜抵抗の
温度特性を示す図である。
１・・・・圧力センサ素子、３・・・・フィードバック
抵抗、３ｍ ・・・・厚膜抵抗、３ｂ・・・拡散抵抗。FIG. 1 is a circuit diagram for explaining an embodiment of the span voltage temperature compensation method for a semiconductor pressure sensor according to the present invention, and FIG.
The figure is a circuit diagram for explaining an example of the span voltage temperature compensation method of a conventional pressure sensor. Figure 3 is a diagram showing the temperature characteristics of the span voltage. Figure 4 is the temperature of the diffused resistor 1 combined resistance and thick film resistor. FIG. 3 is a diagram showing characteristics. 1...Pressure sensor element, 3...Feedback resistor, 3m...Thick film resistor, 3b...Diffused resistor.
Claims (1)
ショントリミングにより各センサ毎に調整し、スパン電
圧の温度補償を高精度に行うようにしたことを特徴とす
る半導体圧力センサのスパン電圧温度補償方法。A span voltage temperature compensation method for a semiconductor pressure sensor, characterized in that the span voltage temperature compensation resistor of the pressure sensor is adjusted for each sensor by function trimming to perform temperature compensation of the span voltage with high accuracy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13570890A JPH0430478A (en) | 1990-05-25 | 1990-05-25 | Span voltage temperature compensating method of semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13570890A JPH0430478A (en) | 1990-05-25 | 1990-05-25 | Span voltage temperature compensating method of semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0430478A true JPH0430478A (en) | 1992-02-03 |
Family
ID=15158030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13570890A Pending JPH0430478A (en) | 1990-05-25 | 1990-05-25 | Span voltage temperature compensating method of semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0430478A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0856726A1 (en) * | 1997-01-30 | 1998-08-05 | TEMIC TELEFUNKEN microelectronic GmbH | Method of temperature compensation in mesuring systems |
| JP2002148131A (en) * | 2000-11-10 | 2002-05-22 | Denso Corp | Physical quantity detector |
-
1990
- 1990-05-25 JP JP13570890A patent/JPH0430478A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0856726A1 (en) * | 1997-01-30 | 1998-08-05 | TEMIC TELEFUNKEN microelectronic GmbH | Method of temperature compensation in mesuring systems |
| US5926778A (en) * | 1997-01-30 | 1999-07-20 | Temic Telefunken Microelectronic Gmbh | Method for temperature compensation in measuring systems |
| JP2002148131A (en) * | 2000-11-10 | 2002-05-22 | Denso Corp | Physical quantity detector |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4556807A (en) | Pressure transducer with temperature compensation circuit | |
| US5053692A (en) | Temperature dependent power supply for use with a bridge transducer | |
| JPS6214783B2 (en) | ||
| US5134885A (en) | Circuit arrangement for measuring a mechanical deformation, in particular under the influence of a pressure | |
| US4109196A (en) | Resistance measuring circuit | |
| US4196382A (en) | Physical quantities electric transducers temperature compensation circuit | |
| US5408885A (en) | Pressure detecting circuit for semiconductor pressure sensor | |
| JPH0430478A (en) | Span voltage temperature compensating method of semiconductor pressure sensor | |
| JPH0748624B2 (en) | Logarithmic amplifier | |
| JP3435501B2 (en) | Temperature compensation circuit | |
| US4475071A (en) | Speed control apparatus for d.c. motor | |
| JPS6197543A (en) | Compensation circuit for semiconductor pressure sensor | |
| JPH11271163A (en) | Method and apparatus for calibration of pressure gage | |
| JPH042170A (en) | Temperature compensation method for span voltage of semiconductor diffused resistor type of pressure sensor | |
| JPH04131721A (en) | Stress sensor | |
| JPH07139985A (en) | Thermal air flow measuring instrument | |
| JPH033368A (en) | Function trimming method for semiconductor pressure sensor element | |
| JP2516647Y2 (en) | Temperature compensation circuit | |
| JPH09101211A (en) | Temperature compensation circuit for span voltage of semiconductor pressure sensor | |
| JPS5951303A (en) | Sensor circuit | |
| JPS60171416A (en) | Resistance type converter | |
| JPS60152912A (en) | Temperature compensating circuit | |
| JP3402356B2 (en) | Semiconductor integrated circuit | |
| JPH0443791Y2 (en) | ||
| JPH0476047B2 (en) |