JPH04273215A - Production of thin-film transistor array substrate - Google Patents

Production of thin-film transistor array substrate

Info

Publication number
JPH04273215A
JPH04273215A JP3406191A JP3406191A JPH04273215A JP H04273215 A JPH04273215 A JP H04273215A JP 3406191 A JP3406191 A JP 3406191A JP 3406191 A JP3406191 A JP 3406191A JP H04273215 A JPH04273215 A JP H04273215A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
mask
ta
production
formed
array substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3406191A
Other versions
JP2986937B2 (en )
Inventor
Masumi Koizumi
Mari Shimizu
Nobuaki Watanabe
Mamoru Yoshida
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To substantially prevent the generation of the disconnection of drain electrodes and to improve the orientation characteristics of a liquid crystal in the production of the TFT array substrate.
CONSTITUTION: A metallic layer 2 consisting of Ta alloy contg. Ta is formed on an insulating substrate 1 and a mask M having heat resistance is formed in the prescribed position thereon and is heated, by which the Ta of the part not coated with the mask M of the metallic layer 2 is oxidized to form an insulating layer 3. The mask M is then removed and the Ta of the metallic layer 2 under this mask M is anodized to form the insulating layer 3. The level difference formed by the constitution on the substrate 1 is decreased according to such procedures. The disconnection of the electrodes is substantially prevented and the orientation characteristics of the liquid crystal are improved.
COPYRIGHT: (C)1992,JPO&Japio
JP3406191A 1991-02-28 1991-02-28 Method of manufacturing a thin film transistor array substrate Expired - Fee Related JP2986937B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3406191A JP2986937B2 (en) 1991-02-28 1991-02-28 Method of manufacturing a thin film transistor array substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3406191A JP2986937B2 (en) 1991-02-28 1991-02-28 Method of manufacturing a thin film transistor array substrate

Publications (2)

Publication Number Publication Date
JPH04273215A true true JPH04273215A (en) 1992-09-29
JP2986937B2 JP2986937B2 (en) 1999-12-06

Family

ID=12403754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3406191A Expired - Fee Related JP2986937B2 (en) 1991-02-28 1991-02-28 Method of manufacturing a thin film transistor array substrate

Country Status (1)

Country Link
JP (1) JP2986937B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589962A (en) * 1992-06-08 1996-12-31 Hitachi, Ltd. Active matrix display device using aluminum alloy in scanning signal line or video signal line
US5849611A (en) * 1992-02-05 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Method for forming a taper shaped contact hole by oxidizing a wiring

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5849611A (en) * 1992-02-05 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Method for forming a taper shaped contact hole by oxidizing a wiring
US6147375A (en) * 1992-02-05 2000-11-14 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device
US6476447B1 (en) 1992-02-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device including a transistor
US5589962A (en) * 1992-06-08 1996-12-31 Hitachi, Ltd. Active matrix display device using aluminum alloy in scanning signal line or video signal line

Also Published As

Publication number Publication date Type
JP2986937B2 (en) 1999-12-06 grant

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