JPH0425737A - Semiconductor type pressure sensor - Google Patents

Abstract

PURPOSE:To allow registration without aligning marks, by providing a projecting part in the peripheral part of a pressure introducing hole part and forming a pressure introducing port in such a manner that the front end thereof exists in the through-hole of an insulating substrate. CONSTITUTION:An insulating substrate 1 is formed with the pressure introducing through-hole 6. A collar part 9 is adhered to one surface of the substrate 1. The projecting part 10 is formed in the direction opposite from the pressure introducing part 11 formed perpendicularly at the center of the collar part 9 in such a manner that the front end thereof is positioned in the hole 6. The front end of the projecting part 10 is inserted into the hole 6, by which the registration is executed without the aligning marks with the substrate 1 at the time of adhering the pressure introducing port 8 to the substrate 1. Further, the adhesive projecting to the hole 6 by the spreading of the adhesive is turned round to the spacing between the hole 6 and the projecting part 10 at the time of adhering, by which the closing of the introducing hole part 11 is surely prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor pressure sensor, and more particularly to a semiconductor pressure sensor in which the bonding structure of a pressure introduction port to an insulating substrate is improved.

[Conventional technology]

Conventionally, this type of semiconductor pressure sensor is known to have a structure in which a pressure introduction port is bonded to the opposite surface of an insulating substrate on which a semiconductor pressure sensor chip is mounted. For example, alignment marks provided on the insulating substrate are used to match the through holes of the insulating substrate with the pressure introduction holes of the pressure introduction ports, and the pressure introduction holes are bonded together with an adhesive.

FIG. 3 is a sectional view of a semiconductor pressure sensor showing an example of such a conventional pressure sensor.

As shown in FIG. 3, the conventional semiconductor pressure sensor has a semiconductor pressure sensor chip 2 on which a diaphragm 3 is formed on an insulating substrate 1, and after electrical connection is made via a gold wire 4. It is covered with -5. On the other hand, when adhering the pressure introduction port 8A to the back side of the insulating substrate 1, apply adhesive to the adhesion surface of the pressure introduction port 8A whose brim portion 9 is flat, and Alignment mark 13
The outer periphery of the pressure introduction port 8A is aligned and bonded. As a result, the pressure introduction hole portion 11 of the pressure introduction port 8A
It becomes possible to align the through hole 6 of the insulating substrate 1 with the through hole 6 of the insulating substrate 1. Thereby, the pressure applied from the pressure introduction port 8A passes through the through hole 6 and reaches the diaphragm portion 3 of the semiconductor pressure sensor chip 2. Therefore, when the diaphragm 7 is strained, the lead frame 7 outputs an output according to the pressure.
It can be taken out to the outside.

[Problem to be solved by the invention]

In the conventional semiconductor pressure sensor described above, when the pressure introduction port and the insulating substrate are bonded together, the bonding is performed in alignment with alignment marks provided on the insulating substrate. Therefore, there is a drawback that an additional step of creating alignment marks is required in the insulating substrate manufacturing process. Further, in conventional semiconductor pressure sensors, since the pressure introduction port has a flat adhesive surface to the substrate, there is a drawback that when bonded to an insulating substrate, the pressure introduction hole is likely to be blocked by spreading of the adhesive.

The purpose of the present invention is to simplify the manufacturing process without using such alignment marks, and also to prevent the pressure introduction hole of the pressure introduction port from being blocked by adhesive when bonding the pressure introduction port to the insulating substrate. An object of the present invention is to provide a semiconductor pressure sensor.

[Means to solve the problem]

The semiconductor pressure sensor of the present invention includes an insulating substrate in which a through hole for introducing pressure is formed, a semiconductor pressure sensor chip mounted on a first surface of the insulating substrate, and an opposite side of the first surface of the insulating substrate. a flange adhered to the second surface of the flange, a pressure introduction hole formed perpendicularly to the center of the flange, and a tip located in the opposite direction to the pressure introduction part and within the through hole of the insulating substrate. and a pressure introduction port having a protrusion formed as shown in FIG.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a sectional view of a semiconductor pressure sensor showing a first embodiment of the present invention.

As shown in FIG. 1, this embodiment includes an insulating substrate 1 with a through hole 6 formed therein, a semiconductor pressure sensor chip 2 mounted on the insulating substrate 1, and a chip covering the semiconductor pressure sensor chip 2 on the insulating substrate 1. A cover 5, a collar 9 bonded to the back side of the insulating substrate 1, a pressure introduction hole 11 perpendicular to this, and a protrusion 10 formed on the opposite side of the pressure introduction hole 11 and the collar 9. It has a pressure introduction port 8 formed with. That is, the semiconductor chip 2 is mounted on the first surface of the insulating substrate 1 in which the through hole 6 for pressure introduction is formed, and the pressure introduction port 8 is bonded to the second surface. In particular, on the second surface of the insulating substrate 1, a protrusion 10 rising from the center of the collar 9 on the adhesive surface side with the insulating substrate 1 is inserted with its tip into the through hole 6 of the insulating substrate 1. Glue the pressure introduction port 8. This makes it possible to align the pressure introduction hole portion 11 of the pressure introduction port 8 with the through hole 6 of the insulating substrate 1.

In addition, the pressure introduction port 8 is easy to manufacture since the collar portion 9, the projection portion 10, and the pressure introduction hole portion 11 are integrated.

FIG. 2 is a sectional view of a semiconductor pressure sensor showing a second embodiment of the present invention.

As shown in FIG. 2, in comparison with the first embodiment described above, this embodiment has a recess, that is, a recess, which is lower than the bonding surface with the insulating substrate 1 on the outer periphery of the root of the protrusion 10 of the pressure introduction port 8. The difference is that 12 was set. In this embodiment, a recess 12 is provided around the through hole 6 in the flange 9 of the pressure introduction port 8, so that when the insulating substrate 1 and the pressure introduction port 8 are bonded, the adhesive spreads and protrudes. This has the advantage that the pressure can be absorbed by the recess 12, thereby reducing the possibility that the pressure introduction hole will be blocked by the adhesive.

Regarding other configurations and functions, please refer to the above-mentioned Part 1.
Since it is the same as the first embodiment shown in the figure, its explanation will be omitted.

〔Effect of the invention〕

As explained above, the semiconductor pressure sensor of the present invention is
When bonding the pressure introduction port to the insulating substrate, a protrusion is provided around the pressure introduction hole, and the pressure introduction port is formed so that the tip of the protrusion is located within the through hole of the insulating substrate. , it is possible to align the pressure introduction hole and the through hole without alignment marks on the insulating substrate, and by gluing the insulating substrate and the pressure introduction port in this state, the through hole can be aligned by spreading the adhesive. Since the adhesive that has protruded out can be passed around into the gap between the through hole and the protrusion, it is possible to reliably prevent the pressure introduction hole from being blocked by the adhesive.

[Brief explanation of drawings]

Fig. 1 is a sectional view of a semiconductor pressure sensor showing a first embodiment of the present invention, Fig. 2 is a sectional view of a semiconductor pressure sensor showing a second embodiment of the invention, and Fig. 3 is a sectional view of a conventional example. FIG. 2 is a cross-sectional view of the semiconductor pressure sensor shown in FIG. ]...Insulating substrate, 2...Semiconductor pressure sensor chip,
3. Pad diaphragm, 4. Gold wire, 5. Chip cover 6. Through hole, 7. Lead frame, 8.
・Pressure introduction port, 9...Brim part, 1o...Protrusion part, 11...Pressure introduction hole part, 12...Recessed part.

Claims (3)

[Claims] 1. An insulating substrate with a through hole for introducing pressure,
a semiconductor pressure sensor chip mounted on a first surface of the insulating substrate; a flange bonded to a second surface opposite to the first surface of the insulating substrate; and a flange formed perpendicularly to the center of the flange. a pressure introduction port having a pressure introduction hole portion and a projection portion formed in a direction opposite to the pressure introduction portion and having a tip located within the through hole of the insulating substrate. type pressure sensor. 2. 2. A semiconductor pressure sensor according to claim 1, wherein the pressure introduction port has a collar portion, a pressure introduction hole portion, and a projection portion integrally formed. 3. 2. A semiconductor pressure sensor according to claim 1, wherein the pressure introduction port has a recess formed in the flange around the base of the protrusion.