JPH04251915A - Formation of element pattern and plated frame using the pattern - Google Patents

Formation of element pattern and plated frame using the pattern

Info

Publication number
JPH04251915A
JPH04251915A JP40767790A JP40767790A JPH04251915A JP H04251915 A JPH04251915 A JP H04251915A JP 40767790 A JP40767790 A JP 40767790A JP 40767790 A JP40767790 A JP 40767790A JP H04251915 A JPH04251915 A JP H04251915A
Authority
JP
Japan
Prior art keywords
pattern
coil
plating
resist
positive resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP40767790A
Other languages
Japanese (ja)
Inventor
Masatomo Yabuta
藪田 正朝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP40767790A priority Critical patent/JPH04251915A/en
Publication of JPH04251915A publication Critical patent/JPH04251915A/en
Pending legal-status Critical Current

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  • Magnetic Heads (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a desired element pattern and an inverted pattern by photoli thography and form a pattern which has high cross-section aspect ratio and a plating mask pattern. CONSTITUTION:Novolak resin positive resist, etc., is formed as a first pattern, a second synthetic rubber negative resist, etc., which do not resolve with developer to be used is filled between the first patterns, and the second pattern is left as an inversion pattern by photolithography. The inversion pattern can be also used as a mask for plating process. The high aspect ratio pattern allows pattern formation whose cross-section is up-side-down taper, and burying material is easily buried between the patterns.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、基板に、薄膜パターン
を形成する工程,特に薄膜磁気ヘッド用メッキフレーム
形成技術に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a process for forming a thin film pattern on a substrate, and more particularly to a technique for forming a plating frame for a thin film magnetic head.

【0002】0002

【従来の技術】図2に薄膜磁気ヘッドの斜視断面図を示
す。薄膜磁気ヘッドは、下磁極5の上にスパイラル状パ
ターンを形成するコイル3と、それと鎖交するように配
置された上磁極6とからなる。コイルパターン間,コイ
ル3と下および上磁極5,6間は絶縁材4で充填され、
コイル3およびそれらと鎖交する下および上磁極5,6
を電気的に絶縁しかつ、機械的に支持している。
2. Description of the Related Art FIG. 2 shows a perspective sectional view of a thin film magnetic head. The thin film magnetic head consists of a coil 3 forming a spiral pattern on a lower magnetic pole 5, and an upper magnetic pole 6 arranged to interlink with the coil 3. An insulating material 4 is filled between the coil patterns and between the coil 3 and the lower and upper magnetic poles 5 and 6.
Coil 3 and lower and upper magnetic poles 5 and 6 interlinked therewith
electrically insulated and mechanically supported.

【0003】このような薄膜磁気ヘッドの製造方法とし
ては、基板Sに下磁極5を形成した後、絶縁材4で下磁
極5を埋め込み、その上にコイル3を形成する。次にコ
イル3を絶縁材4で埋め込み、2層目のコイル3を形成
する。このようにして素子パターンを順次形成し、絶縁
材4で埋め込むことを繰り返して図2に示すような薄膜
磁気ヘッドが形成される。
A method of manufacturing such a thin film magnetic head is to form a lower magnetic pole 5 on a substrate S, bury the lower magnetic pole 5 with an insulating material 4, and form a coil 3 thereon. Next, the coil 3 is embedded with an insulating material 4 to form a second layer of the coil 3. In this way, element patterns are sequentially formed and filled with the insulating material 4, which is repeated to form a thin film magnetic head as shown in FIG.

【0004】ところが、絶縁材4としてAl2 O3 
またはSiO2 をスパッタリング,CVD等により成
膜して用いる場合、図4に示すように埋め込むパターン
の表面形状(薄膜磁気ヘッドではコイル3の断面形状)
のアスペクト比が高いと溝が十分に埋め込まれず、隙間
7を生じてしまうことが問題となる。ここでアスペクト
比とは溝の高さhと幅wの比h/wで定義される値とす
る。
However, as the insulating material 4, Al2O3
Alternatively, when SiO2 is used by forming a film by sputtering, CVD, etc., the surface shape of the embedded pattern (the cross-sectional shape of the coil 3 in the case of a thin-film magnetic head) is shown in Fig. 4.
If the aspect ratio of the groove is high, the problem is that the groove is not filled in sufficiently, resulting in a gap 7. Here, the aspect ratio is defined as the ratio h/w of the height h and width w of the groove.

【0005】ここでコイル3を形成する方法であるフレ
ームメッキ法を図3を用いて説明する。
[0005] Here, the frame plating method, which is a method of forming the coil 3, will be explained with reference to FIG.

【0006】従来のフレームメッキ法では、ポジレジス
ト1を塗布後、コイルパターンを反転させたマスクによ
り露光,現像してメッキフレーム8を形成する〔図3(
a)〕。次にメッキフレーム8間にコイル材料であるC
uを電解メッキによりコイル3として析出させる〔図3
(b)〕。最後に、メッキフレーム材料であるポジレジ
スト1を除去してコイル3を作成完了している〔図3(
c)〕。
In the conventional frame plating method, after applying a positive resist 1, a plating frame 8 is formed by exposure and development using a mask with an inverted coil pattern (see FIG. 3).
a)]. Next, C, which is a coil material, is placed between the plated frames 8.
u is deposited as a coil 3 by electrolytic plating [Figure 3
(b)]. Finally, the positive resist 1, which is the plating frame material, is removed to complete the creation of the coil 3 [Figure 3 (
c)].

【0007】メッキフレーム材料としてネガレジストを
用いても、十分な解像度が得られないためメッキフレー
ム形成ができない。したがって使用されるフレーム材料
はポジレジストがほとんどである。
[0007] Even if a negative resist is used as a plating frame material, a plating frame cannot be formed because sufficient resolution cannot be obtained. Therefore, most of the frame materials used are positive resists.

【0008】[0008]

【発明が解決しようとする課題】ところが、ポジレジス
ト1でパターンを形成すると、前述の通りアスペクト比
が影響して、メッキフレーム断面形状が台形となりやす
い〔図3(a)〕。したがって、台形断面を持つメッキ
フレーム8の間に、メッキ法により材料を析出させると
、形成されたメッキパターンは断面形状が逆台形になる
〔図3(a)〕。
However, when a pattern is formed using the positive resist 1, the cross-sectional shape of the plating frame tends to become trapezoidal due to the influence of the aspect ratio as described above [FIG. 3(a)]. Therefore, when a material is deposited by plating between the plating frames 8 having trapezoidal cross sections, the formed plating pattern has an inverted trapezoidal cross-sectional shape [FIG. 3(a)].

【0009】スパッタ膜を絶縁材4として使用するとき
、埋め込みを困難にしている原因の一つは、このコイル
の断面形状である。つまり、このような逆台形の断面形
状を持つ構造物をスパッタリング等の方法で埋め込む場
合、逆台形形状のオーバーハングが障害になって粒子が
十分にコイル間に堆積せず、埋め込みできないばかりか
、膜質も脆弱なものになる。
When a sputtered film is used as the insulating material 4, one of the factors that makes embedding difficult is the cross-sectional shape of the coil. In other words, when embedding a structure with such an inverted trapezoidal cross-sectional shape by a method such as sputtering, the overhang of the inverted trapezoidal shape becomes an obstacle, and particles are not sufficiently deposited between the coils, making it impossible to embed the structure. The membrane quality also becomes fragile.

【0010】0010

【課題を解決するための手段】そこで本発明では、ポジ
レジストで台形パターンを形成しておき、その隙間にポ
ジレジストとは、現像液溶媒あるいは現像液リンスに対
して、互いに共には溶解しあわない別の種類の有機材料
ネガレジストを充填する。その後、ポジレジストだけを
除去してメッキフレームを形成する。
[Means for Solving the Problems] Accordingly, in the present invention, a trapezoidal pattern is formed using a positive resist, and the positive resist and the positive resist are mutually dissolved in the developer solvent or developer rinse in the gaps between the trapezoidal patterns. No different kind of organic material to fill negative resist. Thereafter, only the positive resist is removed to form a plating frame.

【0011】[0011]

【作用】この結果、ポジレジストを除去した後の有機材
料の断面は逆台形となる。したがって、この逆台形の断
面を持つパターンをメッキフレームとしてコイルを形成
すると、台形形状を持つコイルができる。
[Operation] As a result, the cross section of the organic material after removing the positive resist becomes an inverted trapezoid. Therefore, if a coil is formed using a pattern having an inverted trapezoidal cross section as a plating frame, a coil having a trapezoidal shape can be obtained.

【0012】台形形状のパターンの埋め込みは、スパッ
タ粒子の底面への到達を妨げず、埋め込みは同一のピッ
チパターンを持つコイルよりも容易になり、膜強度も向
上する。
Embedding with a trapezoidal pattern does not prevent sputtered particles from reaching the bottom surface, making embedding easier than with a coil having the same pitch pattern, and improving film strength.

【0013】[0013]

【実施例】本発明を薄膜磁気ヘッドのコイル形成メッキ
工程に適用した例を図1を用いて説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An example in which the present invention is applied to a coil forming plating process for a thin film magnetic head will be described with reference to FIG.

【0014】まず、目的となるコイルのパターンをノボ
ラック樹脂系ポジレジスト1を用いて形成した。所定の
パターンを持つマスクを用いて、波長250〜400n
mの紫外線を露光し、その後アルカリ性水溶液により現
像しパターン形成した。
First, a desired coil pattern was formed using a novolac resin positive resist 1. Using a mask with a predetermined pattern, a wavelength of 250-400n
The film was exposed to ultraviolet light of m and then developed with an alkaline aqueous solution to form a pattern.

【0015】このパターン上に更に合成ゴム系ネガレジ
スト2を塗布した〔図1(a)〕。
A synthetic rubber negative resist 2 was further coated on this pattern [FIG. 1(a)].

【0016】次にポジレジスト1の表面を被っているネ
ガレジスト2をO2 プラズマによるレジスト除去法で
ポジレジストの表面が露出するまで除去した。このとき
レジストの温度を90〜100℃以上に上げないように
した〔図1(b)〕。
Next, the negative resist 2 covering the surface of the positive resist 1 was removed by a resist removal method using O2 plasma until the surface of the positive resist was exposed. At this time, the temperature of the resist was made not to rise above 90 to 100°C [FIG. 1(b)].

【0017】ここでウェーハに再度、波長250〜45
0nmの紫外線を全面照射してポジ,ネガ両方のレジス
トを感光させた。このことにより、ポジレジストは可溶
性になり、一方ネガレジストは重合反応を起こして不溶
性になる。
Here, the wafer is again exposed to wavelengths of 250 to 45.
Both positive and negative resists were exposed by irradiating the entire surface with 0 nm ultraviolet rays. As a result, the positive resist becomes soluble, while the negative resist undergoes a polymerization reaction and becomes insoluble.

【0018】この状態のウェーハをアルカリ性水溶液で
あるポジレジスト現像液で現像した。現像は通常の現像
時間より長く行った。これは、パターン断面が逆台形に
なっているため、現像液がレジスト溝間表面に十分供給
できないためである。現像後のパターン断面は、図1(
c)に示すように逆台形を示していた。
The wafer in this state was developed with a positive resist developer which is an alkaline aqueous solution. Development was carried out for a longer than normal development time. This is because the developing solution cannot be sufficiently supplied to the surface between the resist grooves because the cross section of the pattern is an inverted trapezoid. The cross section of the pattern after development is shown in Figure 1 (
As shown in c), it showed an inverted trapezoid.

【0019】この基板に電解メッキ法を用いてよりCu
を析出させた〔図1(d)〕。
[0019] This substrate was coated with Cu using electrolytic plating method.
was precipitated [Figure 1(d)].

【0020】次にネガレジストパターン2をO2 プラ
ズマ処理による除去し、コイルのみを残した〔図1(e
)〕。
Next, the negative resist pattern 2 was removed by O2 plasma treatment, leaving only the coil [FIG. 1(e)
)].

【0021】このコイル上にスパッタリングにより絶縁
材を堆積したところ、空洞のない信頼性の高い絶縁膜を
作成することができた。
When an insulating material was deposited on this coil by sputtering, a highly reliable insulating film without cavities could be created.

【0022】本実施例では第一のパターンの間に埋め込
む第二の材料としてネガレジストを用いているが、感光
性のない合成ゴム系材料でも構わない。
In this embodiment, a negative resist is used as the second material embedded between the first patterns, but a non-photosensitive synthetic rubber material may also be used.

【0023】[0023]

【発明の効果】本発明により、解像度,アスペクト比が
高く、断面が逆テーパ形状となるパターンを作成するこ
とが可能になる。
[Effects of the Invention] According to the present invention, it is possible to create a pattern with high resolution and high aspect ratio, and whose cross section has an inversely tapered shape.

【0024】これを薄膜磁気ヘッドに対応することによ
り、コイル形状を台形にすることができ、スパッタリン
グ等による絶縁材の埋め込みが容易になる。
By adapting this to a thin film magnetic head, the coil shape can be made into a trapezoid, and it becomes easy to embed an insulating material by sputtering or the like.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】  本発明の一実施例を説明するための薄膜磁
気ヘッド製造工程の説明図
[Fig. 1] An explanatory diagram of the manufacturing process of a thin film magnetic head to explain one embodiment of the present invention.

【図2】  薄膜磁気ヘッドの斜視断面図[Figure 2] Perspective cross-sectional view of thin-film magnetic head

【図3】  
従来のコイル形成工程の説明図
[Figure 3]
Explanatory diagram of the conventional coil forming process

【図4】  従来の薄膜
磁気ヘッドのコイル製造を説明するための説明図
[Figure 4] Explanatory diagram for explaining coil manufacturing for a conventional thin-film magnetic head

【符号の説明】[Explanation of symbols]

1  ポジレジスト 2  ネガレジスト 3  コイル 4  絶縁材 5  下磁極 6  上磁極 7  空洞 8  メッキフレーム 1. Positive resist 2 Negative resist 3 Coil 4 Insulating material 5 Lower magnetic pole 6 Upper magnetic pole 7 Cavity 8 Plated frame

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】フォトリソグラフィ技術を用いて、第一の
パターンを露光・現像して形成し、次に上記第一のパタ
ーンとは現像液溶媒あるいは現像液リンスに対して、互
いに共には溶解しない第二の材料を、第一のパターン間
に充填し、再度フォトリソグラフィ技術にて感光させて
、第一のパターンのみを除去させて、第二のパターンを
反転パターンとして残すことを特徴とする素子パターン
の形成方法。
Claim 1: Using photolithography technology, a first pattern is formed by exposure and development, and then the first pattern and the first pattern do not dissolve together in a developer solvent or a developer rinse. An element characterized in that a second material is filled between the first patterns and exposed again using photolithography technology to remove only the first pattern and leave the second pattern as an inverted pattern. How to form a pattern.
【請求項2】請求項1に記載の方法において、第一のパ
ターンとしてノボラック樹脂系ポジレジストを、第二の
材料として合成ゴム系ネガレジストを使用することを特
徴とする素子パターン形成方法。
2. The device pattern forming method according to claim 1, wherein a novolac resin-based positive resist is used as the first pattern and a synthetic rubber-based negative resist is used as the second material.
【請求項3】請求項1に記載の方法によって形成される
反転パターンを、メッキ処理マスクとして用いることを
特徴とするメッキフレーム。
3. A plating frame characterized in that the inverted pattern formed by the method according to claim 1 is used as a plating mask.
JP40767790A 1990-12-27 1990-12-27 Formation of element pattern and plated frame using the pattern Pending JPH04251915A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP40767790A JPH04251915A (en) 1990-12-27 1990-12-27 Formation of element pattern and plated frame using the pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP40767790A JPH04251915A (en) 1990-12-27 1990-12-27 Formation of element pattern and plated frame using the pattern

Publications (1)

Publication Number Publication Date
JPH04251915A true JPH04251915A (en) 1992-09-08

Family

ID=18517233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP40767790A Pending JPH04251915A (en) 1990-12-27 1990-12-27 Formation of element pattern and plated frame using the pattern

Country Status (1)

Country Link
JP (1) JPH04251915A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7482070B2 (en) 2004-04-30 2009-01-27 Tdk Corporation Magnetic recording medium
JP2013169001A (en) * 2013-05-02 2013-08-29 Fujitsu Ltd Manufacturing method of line conductor
CN110091265A (en) * 2018-01-29 2019-08-06 谢索尔钻石工业株式会社 The anti-plating manufacturing method of grinder pad finisher and the grinder pad finisher thus manufactured

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7482070B2 (en) 2004-04-30 2009-01-27 Tdk Corporation Magnetic recording medium
JP2013169001A (en) * 2013-05-02 2013-08-29 Fujitsu Ltd Manufacturing method of line conductor
CN110091265A (en) * 2018-01-29 2019-08-06 谢索尔钻石工业株式会社 The anti-plating manufacturing method of grinder pad finisher and the grinder pad finisher thus manufactured

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