JPH04240776A - Semiconductor pressure sensor and its manufacture - Google Patents

Semiconductor pressure sensor and its manufacture

Info

Publication number
JPH04240776A
JPH04240776A JP692891A JP692891A JPH04240776A JP H04240776 A JPH04240776 A JP H04240776A JP 692891 A JP692891 A JP 692891A JP 692891 A JP692891 A JP 692891A JP H04240776 A JPH04240776 A JP H04240776A
Authority
JP
Japan
Prior art keywords
wafer
si
face
formed
operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP692891A
Inventor
Masayuki Sekimura
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP692891A priority Critical patent/JPH04240776A/en
Publication of JPH04240776A publication Critical patent/JPH04240776A/en
Application status is Withdrawn legal-status Critical

Links

Abstract

PURPOSE: To obtain a high-sensitivity semiconductor pressure sensor by a method wherein a piezoresistance forming a pressure-sensing resistance is formed on the face of an Si (110) wafer of a bonded body by the Si (110) wafer and by an Si (100) wafer and a diaphragm is formed on the Si (100) wafer by performing a selective etching operation reaching a bonded face or a part near it.
CONSTITUTION: An Si (110) wafer 3 and an Si (100) wafer 4 are pasted and united; after that, a shaping operation or a polishing operation is executed to the wafer 3 so as to make it thin or the like. Then, a piezoresistance element as a pressure-sensing element is formed on the face of the wafer 3. Then, a required masking operation is executed to the face of the wafer 4; an anisotropic etching operation is executed selectively to the bonding interface to the wafer 3 or a part near it; a diaphragm 3a is formed.
COPYRIGHT: (C)1992,JPO&Japio
JP692891A 1991-01-24 1991-01-24 Semiconductor pressure sensor and its manufacture Withdrawn JPH04240776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP692891A JPH04240776A (en) 1991-01-24 1991-01-24 Semiconductor pressure sensor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP692891A JPH04240776A (en) 1991-01-24 1991-01-24 Semiconductor pressure sensor and its manufacture

Publications (1)

Publication Number Publication Date
JPH04240776A true JPH04240776A (en) 1992-08-28

Family

ID=11651911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP692891A Withdrawn JPH04240776A (en) 1991-01-24 1991-01-24 Semiconductor pressure sensor and its manufacture

Country Status (1)

Country Link
JP (1) JPH04240776A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011017693A (en) * 2009-06-09 2011-01-27 Denso Corp Semiconductor dynamic quantity sensor and method of manufacturing the same
CN104266781A (en) * 2014-10-09 2015-01-07 苏州敏芯微电子技术有限公司 Piezoresistive pressure sensor and a manufacturing method of

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011017693A (en) * 2009-06-09 2011-01-27 Denso Corp Semiconductor dynamic quantity sensor and method of manufacturing the same
US8413507B2 (en) 2009-06-09 2013-04-09 Denso Corporation Semiconductor dynamic quantity sensor and method of manufacturing the same
CN104266781A (en) * 2014-10-09 2015-01-07 苏州敏芯微电子技术有限公司 Piezoresistive pressure sensor and a manufacturing method of

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19980514