JPH04212466A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPH04212466A
JPH04212466A JP3048404A JP4840491A JPH04212466A JP H04212466 A JPH04212466 A JP H04212466A JP 3048404 A JP3048404 A JP 3048404A JP 4840491 A JP4840491 A JP 4840491A JP H04212466 A JPH04212466 A JP H04212466A
Authority
JP
Japan
Prior art keywords
formed
leading
out electrode
protrusion 1a
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3048404A
Inventor
Koji Hashimoto
Akihiro Nitayama
Naoko Okabe
Toru Ozaki
Seiichi Takedai
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP17961790 priority Critical
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP3048404A priority patent/JPH04212466A/en
Publication of JPH04212466A publication Critical patent/JPH04212466A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To manufacture a field effect transistor high in reliability even if it is miniaturized by a method wherein the field concentration between a source and drain is restrained without enhancing the short channel effect.
CONSTITUTION: A protrusion 1a is formed on a P type semiconductor substrate 1 and then a gate insulating film 4 and a gate electrode 5 are formed on the protrusion 1a while n type impurities are implanted in inner sides of the protrusion 1a to form LDD n- layers 2a, 2b. Later, a gate leading-out electrode 8c, a source leading-out electrode 8a and a drain leading-out electrode 8b are formed.
COPYRIGHT: (C)1992,JPO&Japio
JP3048404A 1990-07-09 1991-03-13 Semiconductor device and manufacture thereof Pending JPH04212466A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP17961790 1990-07-09
JP3048404A JPH04212466A (en) 1990-07-09 1991-03-13 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3048404A JPH04212466A (en) 1990-07-09 1991-03-13 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH04212466A true JPH04212466A (en) 1992-08-04

Family

ID=26388665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3048404A Pending JPH04212466A (en) 1990-07-09 1991-03-13 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH04212466A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5705840A (en) * 1994-06-06 1998-01-06 United Microelectronics Corporation Field effect transistor with recessed buried source and drain regions
US5721443A (en) * 1995-07-13 1998-02-24 Micron Technology, Inc. NMOS field effect transistors and methods of forming NMOS field effect transistors
US5814861A (en) * 1996-10-17 1998-09-29 Mitsubishi Semiconductor America, Inc. Symmetrical vertical lightly doped drain transistor and method of forming the same
US5834810A (en) * 1996-10-17 1998-11-10 Mitsubishi Semiconductor America, Inc. Asymmetrical vertical lightly doped drain transistor and method of forming the same
WO2002049112A1 (en) * 2000-12-14 2002-06-20 Sony Corporation Semiconductor device and its manufacturing method
US6548859B2 (en) 2000-08-28 2003-04-15 Mitsubishi Denki Kabushiki Kaisha MOS semiconductor device and method of manufacturing the same
US6762458B2 (en) * 2001-04-28 2004-07-13 Hynix Semiconductor Inc. High voltage transistor and method for fabricating the same
KR100753098B1 (en) * 2004-12-28 2007-08-29 주식회사 하이닉스반도체 Semiconductor device with increased channel length and method for manufacturing the same
JP2013042169A (en) * 2004-09-29 2013-02-28 Agere Systems Inc Metal oxide semiconductor device having trench diffusion region and formation method of the same

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5705840A (en) * 1994-06-06 1998-01-06 United Microelectronics Corporation Field effect transistor with recessed buried source and drain regions
US5721443A (en) * 1995-07-13 1998-02-24 Micron Technology, Inc. NMOS field effect transistors and methods of forming NMOS field effect transistors
US5814861A (en) * 1996-10-17 1998-09-29 Mitsubishi Semiconductor America, Inc. Symmetrical vertical lightly doped drain transistor and method of forming the same
US5834810A (en) * 1996-10-17 1998-11-10 Mitsubishi Semiconductor America, Inc. Asymmetrical vertical lightly doped drain transistor and method of forming the same
US6548859B2 (en) 2000-08-28 2003-04-15 Mitsubishi Denki Kabushiki Kaisha MOS semiconductor device and method of manufacturing the same
US6727551B2 (en) 2000-08-28 2004-04-27 Mitsubishi Denki Kabushiki Kaisha MOS semiconductor device and method of manufacturing the same
JP2002184958A (en) * 2000-12-14 2002-06-28 Sony Corp Semiconductor device and manufacturing method thereof
WO2002049112A1 (en) * 2000-12-14 2002-06-20 Sony Corporation Semiconductor device and its manufacturing method
DE10195494B4 (en) * 2000-12-14 2014-02-13 Sony Corporation Semiconductor device and process for its preparation
US7087956B2 (en) 2000-12-14 2006-08-08 Sony Corporation Semiconductor device and it's manufacturing method
US6762458B2 (en) * 2001-04-28 2004-07-13 Hynix Semiconductor Inc. High voltage transistor and method for fabricating the same
JP2013042169A (en) * 2004-09-29 2013-02-28 Agere Systems Inc Metal oxide semiconductor device having trench diffusion region and formation method of the same
KR100753098B1 (en) * 2004-12-28 2007-08-29 주식회사 하이닉스반도체 Semiconductor device with increased channel length and method for manufacturing the same
US7439104B2 (en) 2004-12-28 2008-10-21 Hynix Semiconductor Inc. Semiconductor device with increased channel length and method for fabricating the same
US8026557B2 (en) 2004-12-28 2011-09-27 Hynix Semiconductor, Inc. Semiconductor device with increased channel length and method for fabricating the same

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