JPH04209437A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH04209437A
JPH04209437A JP34090590A JP34090590A JPH04209437A JP H04209437 A JPH04209437 A JP H04209437A JP 34090590 A JP34090590 A JP 34090590A JP 34090590 A JP34090590 A JP 34090590A JP H04209437 A JPH04209437 A JP H04209437A
Authority
JP
Japan
Prior art keywords
groove
polycrystal silicon
electric passage
side walls
fuse electric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34090590A
Other languages
Japanese (ja)
Inventor
Yasuo Oyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP34090590A priority Critical patent/JPH04209437A/en
Publication of JPH04209437A publication Critical patent/JPH04209437A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form a fine fuse electric passage not thicker than the patterning limit of photoresist by forming a polycrystal silicon layer, which is formed in a groove or the side walls of projection parts on the insulating film, as a fuse electric passage to be broken by the over current.
CONSTITUTION: A polycrystal silicon layer is formed on a groove 3, which is formed on an insulating layer 2, and next, the polycrystal silicon of parts except for a side wall 4 of the groove 3 and pads 5 continued to the side walls 4 is eliminated by etching. A polycrystal silicon layer left in the side walls 4 between the pads 5 is formed as a fuse electric passage. With this structure, the sufficient fine fuse electric passage is obtained to reduce the number of processes by forming a depth of the groove 3 shallow.
COPYRIGHT: (C)1992,JPO&Japio
JP34090590A 1990-11-30 1990-11-30 Semiconductor device Pending JPH04209437A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34090590A JPH04209437A (en) 1990-11-30 1990-11-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34090590A JPH04209437A (en) 1990-11-30 1990-11-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH04209437A true JPH04209437A (en) 1992-07-30

Family

ID=18341390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34090590A Pending JPH04209437A (en) 1990-11-30 1990-11-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH04209437A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2723663A1 (en) * 1994-08-10 1996-02-16 Motorola Semiconducteurs SEMICONDUCTOR FUSE DEVICES
CN108346643A (en) * 2017-01-24 2018-07-31 中芯国际集成电路制造(上海)有限公司 A kind of fuse-wires structure and electronic device
CN109411445A (en) * 2016-12-02 2019-03-01 乐清市风杰电子科技有限公司 A kind of manufacturing method of polysilicon fuse structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2723663A1 (en) * 1994-08-10 1996-02-16 Motorola Semiconducteurs SEMICONDUCTOR FUSE DEVICES
EP0697708A1 (en) * 1994-08-10 1996-02-21 Motorola Semiconducteurs S.A. Semiconductor fuse devices
CN109411445A (en) * 2016-12-02 2019-03-01 乐清市风杰电子科技有限公司 A kind of manufacturing method of polysilicon fuse structure
CN108346643A (en) * 2017-01-24 2018-07-31 中芯国际集成电路制造(上海)有限公司 A kind of fuse-wires structure and electronic device

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