JPH04209437A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH04209437A JPH04209437A JP34090590A JP34090590A JPH04209437A JP H04209437 A JPH04209437 A JP H04209437A JP 34090590 A JP34090590 A JP 34090590A JP 34090590 A JP34090590 A JP 34090590A JP H04209437 A JPH04209437 A JP H04209437A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- polycrystal silicon
- electric passage
- side walls
- fuse electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Abstract
PURPOSE: To form a fine fuse electric passage not thicker than the patterning limit of photoresist by forming a polycrystal silicon layer, which is formed in a groove or the side walls of projection parts on the insulating film, as a fuse electric passage to be broken by the over current.
CONSTITUTION: A polycrystal silicon layer is formed on a groove 3, which is formed on an insulating layer 2, and next, the polycrystal silicon of parts except for a side wall 4 of the groove 3 and pads 5 continued to the side walls 4 is eliminated by etching. A polycrystal silicon layer left in the side walls 4 between the pads 5 is formed as a fuse electric passage. With this structure, the sufficient fine fuse electric passage is obtained to reduce the number of processes by forming a depth of the groove 3 shallow.
COPYRIGHT: (C)1992,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34090590A JPH04209437A (en) | 1990-11-30 | 1990-11-30 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34090590A JPH04209437A (en) | 1990-11-30 | 1990-11-30 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04209437A true JPH04209437A (en) | 1992-07-30 |
Family
ID=18341390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34090590A Pending JPH04209437A (en) | 1990-11-30 | 1990-11-30 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04209437A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2723663A1 (en) * | 1994-08-10 | 1996-02-16 | Motorola Semiconducteurs | SEMICONDUCTOR FUSE DEVICES |
| CN108346643A (en) * | 2017-01-24 | 2018-07-31 | 中芯国际集成电路制造(上海)有限公司 | A kind of fuse-wires structure and electronic device |
| CN109411445A (en) * | 2016-12-02 | 2019-03-01 | 乐清市风杰电子科技有限公司 | A kind of manufacturing method of polysilicon fuse structure |
-
1990
- 1990-11-30 JP JP34090590A patent/JPH04209437A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2723663A1 (en) * | 1994-08-10 | 1996-02-16 | Motorola Semiconducteurs | SEMICONDUCTOR FUSE DEVICES |
| EP0697708A1 (en) * | 1994-08-10 | 1996-02-21 | Motorola Semiconducteurs S.A. | Semiconductor fuse devices |
| CN109411445A (en) * | 2016-12-02 | 2019-03-01 | 乐清市风杰电子科技有限公司 | A kind of manufacturing method of polysilicon fuse structure |
| CN108346643A (en) * | 2017-01-24 | 2018-07-31 | 中芯国际集成电路制造(上海)有限公司 | A kind of fuse-wires structure and electronic device |
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