JPH04206863A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH04206863A
JPH04206863A JP33789290A JP33789290A JPH04206863A JP H04206863 A JPH04206863 A JP H04206863A JP 33789290 A JP33789290 A JP 33789290A JP 33789290 A JP33789290 A JP 33789290A JP H04206863 A JPH04206863 A JP H04206863A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
circuit
capacitor
formed
connected
constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33789290A
Inventor
Akio Hattori
Hiroshi Mabuchi
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To improve remarkedly the high-frequency characteristics of a semiconductor device by a method wherein a capacitor is formed on a substrate in such a way as to encircle a circuit, which is constituted of circuit elements, and at the same time, the electrode on one side of the electrodes of the capacitor is connected to the ground terminal of the circuit and the other electrode of the capacitor is connected to the power terminal of the circuit.
CONSTITUTION: A semiconductor device 1 is mainly constituted into a structure, wherein a circuit 16 consisting of a plurality of circuit elements, such as a transistor, a resistor and the like, is formed in the central part of the device 11 and a capacitor 6 is formed in such a way as to encircle the circuit 16. These of the circuit 16 and the capacitor 6 are formed on a common semiconductor substrate (a P-type silicon substrate) 8 en bloc by a general planar technique. The circuit 16 is constituted for wide band amplification use. A ground terminal 12 and a power terminal 13 are formed on the peripheral parts of the circuit 16. The capacitor 6 has electrodes 5 and 7 connected, respectively, to the terminals 12 and 13 of the circuit 16 via aluminum wires 14. That is, the device is formed into a structure, wherein the capacitor 6 is connected between the terminals 12 and 13 of the circuit 16 as a by-pass capacitor.
COPYRIGHT: (C)1992,JPO&Japio
JP33789290A 1990-11-30 1990-11-30 Semiconductor device Pending JPH04206863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33789290A JPH04206863A (en) 1990-11-30 1990-11-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33789290A JPH04206863A (en) 1990-11-30 1990-11-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH04206863A true true JPH04206863A (en) 1992-07-28

Family

ID=18312982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33789290A Pending JPH04206863A (en) 1990-11-30 1990-11-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH04206863A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2780813A1 (en) * 1998-07-03 2000-01-07 Fujitsu Ltd Improved semiconductor inter-element island isolation technique

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2780813A1 (en) * 1998-07-03 2000-01-07 Fujitsu Ltd Improved semiconductor inter-element island isolation technique

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