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JPH04206630A - Manufacture of amorphous silicon thin film - Google Patents

Manufacture of amorphous silicon thin film

Info

Publication number
JPH04206630A
JPH04206630A JP33418090A JP33418090A JPH04206630A JP H04206630 A JPH04206630 A JP H04206630A JP 33418090 A JP33418090 A JP 33418090A JP 33418090 A JP33418090 A JP 33418090A JP H04206630 A JPH04206630 A JP H04206630A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
gas
film
amorphous
silicon
raw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33418090A
Other versions
JPH06101448B2 (en )
Inventor
Kuniyuki Mashima
Akihisa Matsuda
Original Assignee
Agency Of Ind Science & Technol
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PURPOSE: To obtain a thin film whose deterioration by light is eliminated substantially by a method wherein, when an amorphous silicon film is formed by a plasma CVD method, a mixed gas for which the ratio, expressed in terms of a volume, of xenon gas to a raw-material gas used to form the amorphous silicon film is at a prescribed value or higher.
CONSTITUTION: A glass substrate 4 is mounted on a lower-part electrode 3 inside a reaction container 2; the container 2 is sealed hermetically and evacuated in such a way that its internal pressure is reduced to a pressure of about 1×10-4 to 1×10-5Torr. The glass substrate 4 is heated to about 200 to 300°C. Then, a mixed gas which is composed of Xe gas and of a raw gas used to form an a-Si film such as SiH4 is introduced; an electric discharge is generated between an upper-part electrode and the lower-part electrode 3, 3; the a-Si thin film is formed on the glass substrate 4. At this time, Xe gas whose volume ratio to the a-Si raw gas is at 1 or higher and at 30 or lower is contained. Thereby, it is possible to obtain an amorphous silicon film whose performance to restrain deterioration by light is excellent.
COPYRIGHT: (C)1992,JPO&Japio
JP33418090A 1990-11-30 1990-11-30 The method of manufacturing Amorufu Ass silicon-based thin film Expired - Lifetime JPH06101448B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33418090A JPH06101448B2 (en) 1990-11-30 1990-11-30 The method of manufacturing Amorufu Ass silicon-based thin film

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP33418090A JPH06101448B2 (en) 1990-11-30 1990-11-30 The method of manufacturing Amorufu Ass silicon-based thin film
DE1991603251 DE69103251T2 (en) 1990-11-30 1991-11-25 A method of forming an amorphous silicon thin film by plasma CVD.
EP19910120065 EP0488112B1 (en) 1990-11-30 1991-11-25 Method of forming thin film of amorphous silicon by plasma CVD
DE1991603251 DE69103251D1 (en) 1990-11-30 1991-11-25 A method of forming an amorphous silicon thin film by plasma CVD.
US07797987 US5246744A (en) 1990-11-30 1991-11-26 Method of forming thin film of amorphous silicon by plasma cvd

Publications (2)

Publication Number Publication Date
JPH04206630A true true JPH04206630A (en) 1992-07-28
JPH06101448B2 JPH06101448B2 (en) 1994-12-12

Family

ID=18274434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33418090A Expired - Lifetime JPH06101448B2 (en) 1990-11-30 1990-11-30 The method of manufacturing Amorufu Ass silicon-based thin film

Country Status (1)

Country Link
JP (1) JPH06101448B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6391690B2 (en) 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6391690B2 (en) 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
US6660572B2 (en) 1995-12-14 2003-12-09 Seiko Epson Corporation Thin film semiconductor device and method for producing the same

Also Published As

Publication number Publication date Type
JP1967743C (en) grant
JPH06101448B2 (en) 1994-12-12 grant

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