JPH04196526A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPH04196526A
JPH04196526A JP32834790A JP32834790A JPH04196526A JP H04196526 A JPH04196526 A JP H04196526A JP 32834790 A JP32834790 A JP 32834790A JP 32834790 A JP32834790 A JP 32834790A JP H04196526 A JPH04196526 A JP H04196526A
Authority
JP
Japan
Prior art keywords
alloy
film
substrate
contact
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP32834790A
Other languages
Japanese (ja)
Other versions
JP2601020B2 (en
Inventor
Kuniko Miyagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP32834790A priority Critical patent/JP2601020B2/en
Publication of JPH04196526A publication Critical patent/JPH04196526A/en
Application granted granted Critical
Publication of JP2601020B2 publication Critical patent/JP2601020B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a semiconductor device and its manufacturing method in which electric characteristics of the device are not deteriorated and further a fine contact can sufficiently be filled up, by forming Al-Ti alloy on barrier metal in the part in contact with substrate semiconductor in a hole, and forming Al-Ge-Si alloy on the Al-Ti alloy.
CONSTITUTION: A P+ diffusion layer 15 turning to a part of an element like a transistor is formed on the surface of an Si substrate 1. An oxide film 2 is formed on the substrate 1, and a contact hole 10 is formed by etching the oxide film 2. A Ti film 20 and a TiN film 25 are formed by sputtering, and then subjected to lamp annealing in a nitrogen atmosphere. After Ti is sputtered at a room temperature, an Al-Ge-Si alloy film 4 containing Ge of 5wt.% and Si of 1wt.% is formed on the Ti by sputtering. At time, Ti on the TiN film reacts with the Al-Ge-Si alloy and forms an Al-Ti alloy layer 3. By this method, a contact hole whose aspect ratio is larger than or equal to 1 can be filled up, and junction leak current is not observed.
COPYRIGHT: (C)1992,JPO&Japio
JP32834790A 1990-11-28 1990-11-28 Semiconductor device and manufacturing method thereof Expired - Fee Related JP2601020B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32834790A JP2601020B2 (en) 1990-11-28 1990-11-28 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32834790A JP2601020B2 (en) 1990-11-28 1990-11-28 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH04196526A true JPH04196526A (en) 1992-07-16
JP2601020B2 JP2601020B2 (en) 1997-04-16

Family

ID=18209227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32834790A Expired - Fee Related JP2601020B2 (en) 1990-11-28 1990-11-28 Semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP2601020B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994019826A1 (en) * 1993-02-17 1994-09-01 Materials Research Corporation Filling of vias and contacts employing an aluminum-germanium alloy
EP0793271A2 (en) * 1996-02-22 1997-09-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a metal silicide film and method of fabricating the same
CN107004597A (en) * 2014-12-23 2017-08-01 英特尔公司 Decouple via filling

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994019826A1 (en) * 1993-02-17 1994-09-01 Materials Research Corporation Filling of vias and contacts employing an aluminum-germanium alloy
EP0793271A2 (en) * 1996-02-22 1997-09-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a metal silicide film and method of fabricating the same
EP0793271A3 (en) * 1996-02-22 1998-12-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a metal silicide film and method of fabricating the same
US6008124A (en) * 1996-02-22 1999-12-28 Matsushita Electric Industrial Co., Ltd. Semiconductor device having improved lamination-structure reliability for buried layers, silicide films and metal films, and a method for forming the same
CN107004597A (en) * 2014-12-23 2017-08-01 英特尔公司 Decouple via filling
US10903114B2 (en) 2014-12-23 2021-01-26 Intel Corporation Decoupled via fill

Also Published As

Publication number Publication date
JP2601020B2 (en) 1997-04-16

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