JPH04196350A - Multichip semiconductor device - Google Patents
Multichip semiconductor deviceInfo
- Publication number
- JPH04196350A JPH04196350A JP32272790A JP32272790A JPH04196350A JP H04196350 A JPH04196350 A JP H04196350A JP 32272790 A JP32272790 A JP 32272790A JP 32272790 A JP32272790 A JP 32272790A JP H04196350 A JPH04196350 A JP H04196350A
- Authority
- JP
- Japan
- Prior art keywords
- assembly
- semiconductor device
- adhesive
- assembly frame
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 7
- 229910000679 solder Inorganic materials 0.000 claims abstract description 6
- 239000000853 adhesive Substances 0.000 claims description 20
- 230000001070 adhesive effect Effects 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 4
- 239000007767 bonding agent Substances 0.000 abstract 6
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 230000000063 preceeding effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 9
- 230000015654 memory Effects 0.000 description 5
- 238000001723 curing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 210000004709 eyebrow Anatomy 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の構造とその製造法に係り、特にフ
ィルムキャリアを用いた大容量マルチチップ半導体装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a semiconductor device and its manufacturing method, and particularly to a large-capacity multi-chip semiconductor device using a film carrier.
半導体メモリは、大型コンピュータ、ワークスティジョ
ン、パソコン、ワープロ等の情報機器に多量に使用され
ている。今後、これらの機器の高性能化、製品拡大がさ
らに進むことから、ここに使われている半導体メモリの
需要も加速度的に増大していくものと予想される。これ
に対し、大容量のメモリを必要とする装置では、機器内
での半導体メモリが占める実装面積は増大する方向にあ
り、これが機器の小形、軽量化を阻害する最大の要因と
なっている。この問題の解決法として、その一つは従来
から強力に押し進められているチップ内素子の高集積化
によるーチップ当りのメモリ容量増大である。また、他
の一つはパッケージングされたメモリモジュールをプリ
ント配線板に高密度に実装する方法であり、さらに、他
の一つは、特開昭59−194460号及び特開昭61
−185958号公報、特開昭59−205747に述
べられているように、複数個の半導体チップを厚さ方向
に積み重ねて高密度化を図るものである。これらのうち
、チップ内素子の高集積化は従来技術の延長では解決出
来ない局面に来ており、新技術、生産設備の開発が必要
である。プリント板への高密度実装方法はモジュールの
小形化、プリント板への両面実装、ZIP(Zigza
g−in−Line Package)部品の採用等
が行われており、−個のチップを一パッケージングとし
たモジュールを使う範囲ではこれ以上の大幅な高密度化
は難しい状況にある。Semiconductor memories are widely used in information devices such as large computers, workstations, personal computers, and word processors. In the future, as the performance of these devices continues to improve and the number of products expanded further, demand for the semiconductor memories used in these devices is expected to increase at an accelerating pace. On the other hand, in devices that require large-capacity memory, the mounting area occupied by the semiconductor memory within the device tends to increase, and this is the biggest factor preventing devices from becoming smaller and lighter. One way to solve this problem is to increase the memory capacity per chip by increasing the integration of the elements within the chip, which has been strongly promoted in the past. Another method is to mount packaged memory modules on a printed wiring board with high density.
As described in Japanese Patent Laid-open No. 185958 and Japanese Patent Laid-Open No. 59-205747, a plurality of semiconductor chips are stacked in the thickness direction to achieve high density. Among these, the need for higher integration of on-chip elements has reached a point where it cannot be solved by extending conventional technology, and new technology and production equipment must be developed. High-density mounting methods on printed boards include module miniaturization, double-sided mounting on printed boards, and ZIP (Zigza
g-in-line package) components are being adopted, and it is difficult to significantly increase the density any further within the range of using a module in which -1 chips are packaged.
これに対し、複数個のICチップを厚さ方向に積み重ね
る方法が非常に有利であり、種々提案されているが組立
枠を用いて、ICチップ(フィルムキャリア装置=TA
B)を積み重ね従来の方法においては、組立枠の電極パ
ターンとTABアウタリードの位置合わせは、組立治具
に設けられた位置合わせ用ピンに、位置合わせ用穴設け
られた組立枠をピンに通して行っている。この為、マル
チチップ装置の自動組立が難しいこと、積層時該組立枠
と該TABの位置ずれが起こり、アウタリードと組立枠
の電極パターンの接合不良、接合端子間短絡及び断線、
眉間TABの接続不良が発生しやすくなる等の不具合が
あった。On the other hand, a method of stacking a plurality of IC chips in the thickness direction is very advantageous, and various proposals have been made.
In the conventional method, the electrode pattern on the assembly frame and the TAB outer lead are aligned by passing the assembly frame with alignment holes through alignment pins provided on the assembly jig. Is going. For this reason, automatic assembly of the multi-chip device is difficult, misalignment of the assembly frame and the TAB occurs during stacking, poor bonding of the electrode pattern of the outer lead and the assembly frame, short-circuits and disconnections between bonding terminals,
There were problems such as poor connection of the TAB between the eyebrows.
本発明の目的は、上記従来の不具合点を除去した半導体
装置を提供することにある。An object of the present invention is to provide a semiconductor device that eliminates the above-mentioned conventional drawbacks.
上記目的は、フィルムキャリア半導体装置(TAB)を
2個以上積み重ねてなるマルチチップ半導体装置におい
て、TABの積層時に一段積層する毎に、組立枠の一部
分に紫外線硬化接着剤を塗布して、紫外線照射もしくは
加熱して硬化させて、固定することにより達成される。The above purpose is to apply an ultraviolet curable adhesive to a part of the assembly frame and irradiate it with ultraviolet rays each time when stacking two or more TABs. Alternatively, it can be achieved by heating to harden and fix.
すなわち、フィルムキャリアテープに半導体チップを電
気的に接続したフィルムキャリア半導体装1i (TA
B)を組立用枠を介して、2個以上積み重ねてなるマル
チチップ半導体装置の組立において1組立枠の一部分に
紫外線硬化接着剤、もしくは熱硬化接着剤を塗布し、貼
りあわせて一段積層する毎に、紫外線を照射、もしくは
加熱して硬化させて、組立枠とTABを固定させるよう
にした。これにより、次段用の組立枠及びTABを前段
に逐次搭載してもアウタリードと枠の電極パターンの位
置ずれを防止することが出来る。又、硬化後の該紫外線
硬化接着剤及び該熱硬化接着剤は、はんだリフロー時の
アウタリードと組立枠及び電極との位置ずれ防止効果が
あり、これらによりマルチチップ半導体装置の自動組立
が可能となった。That is, a film carrier semiconductor device 1i (TA
When assembling a multi-chip semiconductor device in which two or more B) are stacked together via an assembly frame, each time a part of one assembly frame is coated with an ultraviolet curing adhesive or a thermosetting adhesive, and each layer is pasted together. Then, the assembly frame and TAB were fixed by irradiating the material with ultraviolet rays or by heating it to cure it. Thereby, even if the assembly frame for the next stage and the TAB are successively mounted on the previous stage, it is possible to prevent the positional shift between the outer lead and the electrode pattern of the frame. In addition, the ultraviolet curing adhesive and the thermosetting adhesive after curing have the effect of preventing misalignment between the outer lead and the assembly frame and electrode during solder reflow, thereby making it possible to automatically assemble multi-chip semiconductor devices. Ta.
以下本発明の一実施例を第1図〜第3図により説明する
。第1図は本発明によって組立だ、マルチチップ半導体
装置の斜視図である。第2図は本発明によるマルチチッ
プ半導体装置の組立工程の大略を説明するものであり、
第3図は従来技術による組立方法の説明図である。An embodiment of the present invention will be described below with reference to FIGS. 1 to 3. FIG. 1 is a perspective view of a multi-chip semiconductor device assembled according to the present invention. FIG. 2 schematically explains the assembly process of a multi-chip semiconductor device according to the present invention.
FIG. 3 is an explanatory diagram of an assembly method according to the prior art.
第1図において、マルチチップ半導体装置1はカプトン
等からなるTAB用フィルムに半導体チップをボンディ
ングし、ポツテング樹脂で封止されたフィルムキャリア
半導体装置2を、上下両面にスルホールで導通が取られ
ている電極用パターン8が設けられているガラスエポキ
シ製の組立用枠6に接続し、このものを接着剤で固定し
ながら、数段積層したものである。In FIG. 1, a multi-chip semiconductor device 1 has a semiconductor chip bonded to a TAB film made of Kapton or the like, and a film carrier semiconductor device 2 sealed with potting resin, which is connected to a film carrier semiconductor device 2 with through holes on both upper and lower surfaces. It is connected to an assembly frame 6 made of glass epoxy provided with an electrode pattern 8, and is laminated in several stages while being fixed with an adhesive.
第1図のマルチチップ半導体装置1の組立は大略、つぎ
の様な手順で行われる。まず第2図(a)に示すガラス
エポキシ基板で作られた組立用枠6を吸着手段を有し、
縦方向と横方向、高さの移動距離及び回転軸の移動調整
が可能な組立手段(ここでは図示せず)で吸着し、所定
の位置から、組夏用治具台に移動設置する。次にフィル
ムキャリア半導体装置1を組立用枠6と同様にして、吸
引吸着して組立用治具台に固定設置された組立用枠6の
上に移動させ、組立用枠6の電極パターン8゜8′とフ
ィルムキャリア半導体装置1の電極り−ド5,5′との
位置合わせを行い、パルスヒートボンダーでボンディン
グし、フィルムキャリア半導体装置1と組立用枠6との
接合を行い、第2図(c)に示すようにフィルムキャリ
ア半導体装置1と組立用枠6とを一体化し、−層のマル
チチップ半導体装置にする。The assembly of the multi-chip semiconductor device 1 shown in FIG. 1 is roughly performed in the following steps. First, an assembly frame 6 made of a glass epoxy substrate shown in FIG.
It is adsorbed by an assembly means (not shown here) that can adjust the moving distance in the vertical and horizontal directions, the height, and the rotational axis, and is moved and installed from a predetermined position on the assembly jig stand. Next, in the same manner as the assembly frame 6, the film carrier semiconductor device 1 is suctioned and moved onto the assembly frame 6 fixedly installed on the assembly jig stand, and the electrode pattern of the assembly frame 6 is adjusted to 8°. 8' and the electrode boards 5, 5' of the film carrier semiconductor device 1, and bonding is performed with a pulse heat bonder to bond the film carrier semiconductor device 1 and the assembly frame 6, as shown in FIG. As shown in (c), the film carrier semiconductor device 1 and the assembly frame 6 are integrated to form a -layer multi-chip semiconductor device.
次に、所定の場所に保管された、−層のマルチチップ半
導体装置を組立枠6と同じように、該組立手段で吸引吸
着し、該組立用治具台に移動設置して固定する。そして
、第2図(d)に示すように、電極パターン8,8′の
無い方の組立枠6の一部に紫外線硬化接着剤7,7′を
所定量塗布した後に再び、次の一部マルチチップ半導体
装置を吸引吸着して、該−層マルチチップ半導体装置の
上に移動させ、位置合わせを行い、−段目と二段目を加
圧接触させながら、紫外線を照射し、紫外線硬化させ、
両者を貼りあわせる。これをn回繰り返して第2図(e
)に示すように逐次積層する。Next, in the same way as the assembly frame 6, the -layer multichip semiconductor device stored at a predetermined location is suctioned and adsorbed by the assembly means, and moved and installed on the assembly jig table and fixed therein. Then, as shown in FIG. 2(d), after applying a predetermined amount of ultraviolet curable adhesive 7, 7' to the part of the assembly frame 6 that does not have the electrode patterns 8, 8', apply the UV curing adhesive 7, 7' again to the next part. The multi-chip semiconductor device is suctioned and adsorbed, moved onto the - layer multi-chip semiconductor device, aligned, and irradiated with ultraviolet rays while bringing the - layer and the second layer into pressure contact and cured by ultraviolet rays. ,
Paste both together. This is repeated n times and shown in Figure 2 (e
).
次に逐次積層したものは電極パターン8,8′と電極リ
ード5,5′の材質に応した接続プロセスで眉間接続を
行う。−船釣には電極パターンと電極リードの材質は銅
下地にAu、Sn、5n−pb金合金Ni−Au合金等
がめっきにより、メタライズされている。ここでは、眉
間接続は温度215℃〜温度235℃ではんだ−はんだ
の接合を行った。Next, the sequentially laminated electrode patterns 8, 8' and the electrode leads 5, 5' are connected to each other by a connection process depending on the material of the electrode leads 5, 5'. - For boat fishing, the material of the electrode pattern and electrode lead is metalized by plating Au, Sn, 5N-PB gold alloy, Ni-Au alloy, etc. on a copper base. Here, the glabella connection was performed by soldering at a temperature of 215°C to 235°C.
第3図に示した従来技術の組立方法は位置合わせ用ピン
11.11’ を有する組立治具]Oに位置合わせ用孔
9,9′が設けられた組立用枠6を位置合わせ用ピン1
1.11’ を通して組立治具10に搭載し、次に位置
合わせ用パイロット部3,3′にパイロット孔4,4′
が設けられたフィルムキャリア半導体装置2を組立用枠
6と同様にして搭載する。The prior art assembly method shown in FIG.
1.11' and mounted on the assembly jig 10, then pilot holes 4, 4' are inserted into the pilot parts 3, 3' for positioning.
The film carrier semiconductor device 2 provided with this is mounted in the same manner as the assembly frame 6.
この動作を積層数に対応して繰り返し、はんだリフロー
工程を経ると所望するマルチチップ半導体装置が得られ
る。ピンに穴あき部品を挿入する従来技術の組立方法で
はフィルムキャリア半導体装置2の位置合わせ用パイロ
ット部の強度が弱いた ・め、ミスマツチによる変形
等が起こりやすく、自動挿入が難しい。また、はんだリ
フロー時、組立用枠6の層間が固定されているために、
フィルムキャリア半導体装置2の電極リート5,5′と
組立用枠6の電極パターン8,8′の位置ずれ、及び組
立用枠6の層間の位置ずれが生し易い。−六本発明によ
る組立方法では、紫外線硬化接着剤により組立用枠の眉
間の固定を行うため、位置ずれが起こらない。また、フ
ィルムキャリア半導体装置の位置合わせ用パイロット部
が不用になるため、マルチチップ半導体装置の小型化が
容易であると共に自動組立が容易に行える。By repeating this operation in accordance with the number of laminated layers and performing a solder reflow process, a desired multi-chip semiconductor device can be obtained. In the conventional assembly method of inserting a holed part into a pin, the strength of the pilot part for positioning the film carrier semiconductor device 2 is weak, so deformation due to mismatching is likely to occur, making automatic insertion difficult. Furthermore, since the interlayers of the assembly frame 6 are fixed during solder reflow,
Misalignment between the electrode strips 5, 5' of the film carrier semiconductor device 2 and the electrode patterns 8, 8' of the assembly frame 6, and misalignment between the layers of the assembly frame 6 are likely to occur. -6 In the assembly method according to the present invention, the assembly frame is fixed between the eyebrows using an ultraviolet curable adhesive, so that positional displacement does not occur. Further, since the pilot part for alignment of the film carrier semiconductor device is not required, the multi-chip semiconductor device can be easily downsized and automatically assembled.
以上述べた如く本発明によれば、マルチチップ半導体装
置の自動組立が容易になり、製造時間の短縮、枠層間の
位置ずれ、電極リードと電極パターンの位置ずれを防止
することができ、歩留まりの良好なマルチチップ半導体
装置を得ることが8来る。As described above, according to the present invention, automatic assembly of multi-chip semiconductor devices is facilitated, manufacturing time is shortened, misalignment between frame layers and misalignment between electrode leads and electrode patterns can be prevented, and yield can be improved. 8. It is possible to obtain a good multi-chip semiconductor device.
第1図は本発明になるマルチチップ半導体装置の斜視図
、第2図は本発明になるマルチチップ半導体装置の組立
方法の説明図、第3図は組立用ピンを用いた従来の組立
方法の説明図。
1 ・マルチチップ半導体装置。
2・ フィルムキャリア半導体装置。
3・・位置合わせ用パイロット部。
4 パイロット孔、 5 電極用リート。
6・・・組立枠、 7・紫外線硬化接着剤。
8 ・電接用パターン、 9 位置合わせ用穴。
10 組立治具、 ]1 位置合わせ用ピン。
第 1 図
第 2 図FIG. 1 is a perspective view of a multi-chip semiconductor device according to the present invention, FIG. 2 is an explanatory diagram of a method for assembling a multi-chip semiconductor device according to the present invention, and FIG. 3 is an illustration of a conventional assembly method using assembly pins. Explanatory diagram. 1 ・Multi-chip semiconductor device. 2. Film carrier semiconductor device. 3. Pilot part for positioning. 4 Pilot hole, 5 Reet for electrode. 6... Assembly frame, 7. Ultraviolet curing adhesive. 8 - Electrical connection pattern, 9 Positioning hole. 10 Assembly jig, ]1 Positioning pin. Figure 1 Figure 2
Claims (1)
接続したフィルムキャリア半導体装置(TAB)を組立
用枠を介して、2個以上積み重ねてなるマルチチップ半
導体装置において、初段の組立用枠の1部分に紫外線硬
化性接着剤もしくは熱硬化性接着剤を塗布した後、次段
組立用枠との位置合わせを行ない、該組立用枠同志を貼
り合わせ、紫外線照射あるいは加熱して接着剤を硬化さ
せ固定した後、該次段の組立枠の該塗布接着剤の無い一
方の面の1部分に紫外線硬化性接着剤もしくは熱硬化性
接着剤を塗布し、一層目と同じく紫外線照射あるいは加
熱して接着剤を硬化させ固定し、所定段数積層した後、
はんだのリフローを行い、アウタリードと組立枠の電極
とを接続して組立てたことを特徴としたマルチチップ半
導体装置。 2、紫外線硬化性接着剤もしくは熱硬化性接着剤を塗布
した該組立用枠を所定段数積層した後、一括して、紫外
線照射あるいは加熱して、該接着剤を硬化させ固定し、
しかる後、はんだリフローを行ってアウタリードと該組
立枠の電極とを接続して組立たことを特徴としたマルチ
チップ半導体装置。[Claims] 1. In a multi-chip semiconductor device formed by stacking two or more film carrier semiconductor devices (TAB) in which semiconductor chips are electrically connected to a film carrier tape via an assembly frame, the first stage assembly After applying an ultraviolet curable adhesive or thermosetting adhesive to one part of the frame, align it with the next assembly frame, stick the assembly frames together, and bond by UV irradiation or heating. After curing and fixing the adhesive, apply an ultraviolet curable adhesive or a thermosetting adhesive to a portion of one side of the next assembly frame that does not have the applied adhesive, and then irradiate it with ultraviolet rays or heat it in the same way as the first layer. After heating to harden and fix the adhesive, and stacking the predetermined number of layers,
A multi-chip semiconductor device characterized in that it is assembled by performing solder reflow and connecting outer leads and electrodes of an assembly frame. 2. After stacking a predetermined number of stages of the assembly frames coated with an ultraviolet curable adhesive or thermosetting adhesive, they are collectively irradiated with ultraviolet rays or heated to cure and fix the adhesive;
A multi-chip semiconductor device characterized in that the outer lead and the electrode of the assembly frame are then assembled by performing solder reflow.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32272790A JPH04196350A (en) | 1990-11-28 | 1990-11-28 | Multichip semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32272790A JPH04196350A (en) | 1990-11-28 | 1990-11-28 | Multichip semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04196350A true JPH04196350A (en) | 1992-07-16 |
Family
ID=18146948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32272790A Pending JPH04196350A (en) | 1990-11-28 | 1990-11-28 | Multichip semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04196350A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001015228A1 (en) * | 1999-08-19 | 2001-03-01 | Seiko Epson Corporation | Wiring board, method of manufacturing wiring board, electronic device, method of manufacturing electronic device, circuit board and electronic apparatus |
-
1990
- 1990-11-28 JP JP32272790A patent/JPH04196350A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001015228A1 (en) * | 1999-08-19 | 2001-03-01 | Seiko Epson Corporation | Wiring board, method of manufacturing wiring board, electronic device, method of manufacturing electronic device, circuit board and electronic apparatus |
US6977441B2 (en) | 1999-08-19 | 2005-12-20 | Seiko Epson Corporation | Interconnect substrate and method of manufacture thereof, electronic component and method of manufacturing thereof, circuit board and electronic instrument |
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