JPH04192519A - Vertical process for semiconductor heat processing tube structure - Google Patents

Vertical process for semiconductor heat processing tube structure

Info

Publication number
JPH04192519A
JPH04192519A JP32481990A JP32481990A JPH04192519A JP H04192519 A JPH04192519 A JP H04192519A JP 32481990 A JP32481990 A JP 32481990A JP 32481990 A JP32481990 A JP 32481990A JP H04192519 A JPH04192519 A JP H04192519A
Authority
JP
Japan
Prior art keywords
tube
inner
gas
pipe
tubes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP32481990A
Other versions
JP3077195B2 (en
Inventor
Osamu Horigome
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP02324819A priority Critical patent/JP3077195B2/en
Publication of JPH04192519A publication Critical patent/JPH04192519A/en
Application granted granted Critical
Publication of JP3077195B2 publication Critical patent/JP3077195B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Abstract

PURPOSE: To simplify cleaning by supporting an inner tube and outer tube of an inner and outer tube double structure in a pipe holder and adding a heat exchange panel to the tube.
CONSTITUTION: An inner tube 1 and an outer tube 2 are combined in an inner and outer tube double structure and supported by a pipe holder 5. Next, the space between the tubes 1 and 2 plays a role of the piping, and gas entering through the gas inlet pipe 7 takes heat from the outer wall of the tube 1, the inner wall of the tube 2, and the heat exchange transfer panel 4, and once it has reached the temperature for heat processing the semiconductor substrate it passes through the holes 3 and is supplied to the semiconductor substrate. The reacted gas is released to the outside through the exhaust pipe 6. In other words, the tubes 1 and 2 are inserted into the pipe holder 5 and space is left between the piping of the tubes 1 and 2 and the pipe holder 5. Since the gas pressure of the gas inlet pipe 7 is higher than standard pressure, clean gas can be supplied to the semiconductor substrate. This structure simplifies the cleaning process.
COPYRIGHT: (C)1992,JPO&Japio
JP02324819A 1990-11-27 1990-11-27 Vertical structure process tube for semiconductor heat treatment Expired - Lifetime JP3077195B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02324819A JP3077195B2 (en) 1990-11-27 1990-11-27 Vertical structure process tube for semiconductor heat treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02324819A JP3077195B2 (en) 1990-11-27 1990-11-27 Vertical structure process tube for semiconductor heat treatment

Publications (2)

Publication Number Publication Date
JPH04192519A true JPH04192519A (en) 1992-07-10
JP3077195B2 JP3077195B2 (en) 2000-08-14

Family

ID=18170028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02324819A Expired - Lifetime JP3077195B2 (en) 1990-11-27 1990-11-27 Vertical structure process tube for semiconductor heat treatment

Country Status (1)

Country Link
JP (1) JP3077195B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5782980A (en) * 1996-05-14 1998-07-21 Advanced Micro Devices, Inc. Low pressure chemical vapor deposition apparatus including a process gas heating subsystem
EP1345254A3 (en) * 2002-03-15 2006-03-15 Asm International N.V. Process tube support sleeve with circumferential channels
JP2012156510A (en) * 2011-01-21 2012-08-16 Asm Internatl Nv Thermal processing furnace and liner for the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5782980A (en) * 1996-05-14 1998-07-21 Advanced Micro Devices, Inc. Low pressure chemical vapor deposition apparatus including a process gas heating subsystem
EP1345254A3 (en) * 2002-03-15 2006-03-15 Asm International N.V. Process tube support sleeve with circumferential channels
JP2012156510A (en) * 2011-01-21 2012-08-16 Asm Internatl Nv Thermal processing furnace and liner for the same

Also Published As

Publication number Publication date
JP3077195B2 (en) 2000-08-14

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