JPH04192317A - Projection optical equipment - Google Patents

Projection optical equipment

Info

Publication number
JPH04192317A
JPH04192317A JP2318025A JP31802590A JPH04192317A JP H04192317 A JPH04192317 A JP H04192317A JP 2318025 A JP2318025 A JP 2318025A JP 31802590 A JP31802590 A JP 31802590A JP H04192317 A JPH04192317 A JP H04192317A
Authority
JP
Japan
Prior art keywords
reticle
image
thermal deformation
projection optical
correction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2318025A
Other versions
JP3047461B2 (en
Inventor
Masahiro Nei
Tetsuo Taniguchi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2318025A priority Critical patent/JP3047461B2/en
Publication of JPH04192317A publication Critical patent/JPH04192317A/en
Application granted granted Critical
Publication of JP3047461B2 publication Critical patent/JP3047461B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70258Projection system adjustment, alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891Temperature

Abstract

PURPOSE: To realize highly precise image formation, and improve image overlapping precision and the like, by a method wherein the change of image state due to thermal deformation caused by illumination light absorption on a reticle is obtained by calculation, and correction is performed by a correcting means.
CONSTITUTION: A light shielding object is inserted between a reticle R and a projection optical system PL. A shutter 2 is opened for a specified period, and illumination light is projected. Next the light shielding object is removed. The image of the reticle R is again exposed on a wafer W, and compared with the firstly exposed image. Thus the change amount of image state due to the thermal deformation of the reticle R can be known. After sufficient correction about the thermal deformation of the reticle is finished by the above method, projection is performed under the state that the light shielding object is not present, thereby detecting the amount of illumination light absorption of the projection optical system PL. Hence the thermal deformation of the reticle and that of the projection optical system can be separated, and the correction can be done separately, so that accurate correction is realized even when the reticle is exchanged during operation.
COPYRIGHT: (C)1992,JPO&Japio
JP2318025A 1990-11-26 1990-11-26 Projection exposure apparatus, a projection exposure method, and a semiconductor integrated circuit manufacturing process Expired - Lifetime JP3047461B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2318025A JP3047461B2 (en) 1990-11-26 1990-11-26 Projection exposure apparatus, a projection exposure method, and a semiconductor integrated circuit manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2318025A JP3047461B2 (en) 1990-11-26 1990-11-26 Projection exposure apparatus, a projection exposure method, and a semiconductor integrated circuit manufacturing process

Publications (2)

Publication Number Publication Date
JPH04192317A true JPH04192317A (en) 1992-07-10
JP3047461B2 JP3047461B2 (en) 2000-05-29

Family

ID=18094659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2318025A Expired - Lifetime JP3047461B2 (en) 1990-11-26 1990-11-26 Projection exposure apparatus, a projection exposure method, and a semiconductor integrated circuit manufacturing process

Country Status (1)

Country Link
JP (1) JP3047461B2 (en)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581324A (en) * 1993-06-10 1996-12-03 Nikon Corporation Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
US6088082A (en) * 1997-01-14 2000-07-11 Canon Kabushiki Kaisha Projection aligner and projection aligning method
US6100515A (en) * 1993-06-14 2000-08-08 Nikon Corporation Scanning exposure method and apparatus in which a mask and a substrate are moved at different scan velocities and exposure parameters are varied
EP1037266A1 (en) * 1997-10-07 2000-09-20 Nikon Corporation Projection exposure method and apparatus
US6235438B1 (en) 1997-10-07 2001-05-22 Nikon Corporation Projection exposure method and apparatus
US6259510B1 (en) 1993-02-01 2001-07-10 Nikon Corporation Exposure method and apparatus
US6433351B1 (en) 1998-06-04 2002-08-13 Canon Kabushiki Kaisha Exposure apparatus and control method for correcting an exposure optical system on the basis of an estimated magnification variation
EP1245984A2 (en) * 2001-03-27 2002-10-02 Nikon Corporation A projection optical system, a projection exposure apparatus, and a projection exposure method
US6556353B2 (en) 2001-02-23 2003-04-29 Nikon Corporation Projection optical system, projection exposure apparatus, and projection exposure method
US6606144B1 (en) 1999-09-29 2003-08-12 Nikon Corporation Projection exposure methods and apparatus, and projection optical systems
US6674513B2 (en) 1999-09-29 2004-01-06 Nikon Corporation Projection exposure methods and apparatus, and projection optical systems
US6693700B2 (en) 2000-03-28 2004-02-17 Canon Kabushiki Kaisha Scanning projection exposure apparatus
US6738128B2 (en) 2002-04-02 2004-05-18 Canon Kabushiki Kaisha Exposure apparatus
JP2004312030A (en) * 1999-04-13 2004-11-04 Etec Systems Inc System and method to correct distortion caused by bulk heating in substrate
EP1548504A1 (en) * 2003-12-23 2005-06-29 ASML Netherlands B.V. Thermal deformation of a wafer in a lithographic process
JP2008216554A (en) * 2007-03-02 2008-09-18 Nikon Corp Temperature measuring device, scanning exposure device, exposure method and method for manufacturing device
US7462430B2 (en) * 2005-10-12 2008-12-09 Asml Netherlands B.V. Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device
US7830493B2 (en) 2005-10-04 2010-11-09 Asml Netherlands B.V. System and method for compensating for radiation induced thermal distortions in a substrate or projection system
JP2012084793A (en) * 2010-10-14 2012-04-26 Nikon Corp Exposure method, server device, exposure device and manufacturing method of device
JP2013115348A (en) * 2011-11-30 2013-06-10 Canon Inc Calculation method of variation in imaging characteristics of projection optical system, exposure device and manufacturing method of device
US8502954B2 (en) 2004-03-29 2013-08-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2015107976A1 (en) * 2014-01-16 2015-07-23 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
JP2015522843A (en) * 2012-07-06 2015-08-06 エーエスエムエル ネザーランズ ビー.ブイ. lithographic apparatus

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6411364B1 (en) 1993-02-01 2002-06-25 Nikon Corporation Exposure apparatus
US6259510B1 (en) 1993-02-01 2001-07-10 Nikon Corporation Exposure method and apparatus
US5581324A (en) * 1993-06-10 1996-12-03 Nikon Corporation Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
US6396071B1 (en) 1993-06-14 2002-05-28 Nikon Corporation Scanning exposure method and apparatus
US6100515A (en) * 1993-06-14 2000-08-08 Nikon Corporation Scanning exposure method and apparatus in which a mask and a substrate are moved at different scan velocities and exposure parameters are varied
US6088082A (en) * 1997-01-14 2000-07-11 Canon Kabushiki Kaisha Projection aligner and projection aligning method
EP1037266A1 (en) * 1997-10-07 2000-09-20 Nikon Corporation Projection exposure method and apparatus
US6235438B1 (en) 1997-10-07 2001-05-22 Nikon Corporation Projection exposure method and apparatus
US6522390B2 (en) 1997-10-07 2003-02-18 Nikon Corporation Projection exposure method and apparatus
EP1037266A4 (en) * 1997-10-07 2002-09-11 Nikon Corp Projection exposure method and apparatus
US6433351B1 (en) 1998-06-04 2002-08-13 Canon Kabushiki Kaisha Exposure apparatus and control method for correcting an exposure optical system on the basis of an estimated magnification variation
JP4511242B2 (en) * 1999-04-13 2010-07-28 エテック システムズ インコーポレイテッド System and method for correcting distortion caused to a substrate by bulk heating
JP2004312030A (en) * 1999-04-13 2004-11-04 Etec Systems Inc System and method to correct distortion caused by bulk heating in substrate
EP1936419A2 (en) 1999-09-29 2008-06-25 Nikon Corporation Projection exposure methods and apparatus, and projection optical systems
US6606144B1 (en) 1999-09-29 2003-08-12 Nikon Corporation Projection exposure methods and apparatus, and projection optical systems
US6674513B2 (en) 1999-09-29 2004-01-06 Nikon Corporation Projection exposure methods and apparatus, and projection optical systems
US6864961B2 (en) 1999-09-29 2005-03-08 Nikon Corporation Projection exposure methods and apparatus, and projection optical systems
EP1936420A2 (en) 1999-09-29 2008-06-25 Nikon Corporation Projection exposure methods and apparatus, and projection optical system
US6693700B2 (en) 2000-03-28 2004-02-17 Canon Kabushiki Kaisha Scanning projection exposure apparatus
US6699628B2 (en) 2000-03-28 2004-03-02 Canon Kabushiki Kaisha Aligning method for a scanning projection exposure apparatus
US6556353B2 (en) 2001-02-23 2003-04-29 Nikon Corporation Projection optical system, projection exposure apparatus, and projection exposure method
US6912094B2 (en) 2001-03-27 2005-06-28 Nikon Corporation Projection optical system, a projection exposure apparatus, and a projection exposure method
EP1245984A3 (en) * 2001-03-27 2004-06-16 Nikon Corporation A projection optical system, a projection exposure apparatus, and a projection exposure method
EP1245984A2 (en) * 2001-03-27 2002-10-02 Nikon Corporation A projection optical system, a projection exposure apparatus, and a projection exposure method
US6738128B2 (en) 2002-04-02 2004-05-18 Canon Kabushiki Kaisha Exposure apparatus
EP1548504A1 (en) * 2003-12-23 2005-06-29 ASML Netherlands B.V. Thermal deformation of a wafer in a lithographic process
US7250237B2 (en) 2003-12-23 2007-07-31 Asml Netherlands B.V. Optimized correction of wafer thermal deformations in a lithographic process
US7595496B2 (en) 2003-12-23 2009-09-29 Asml Netherlands B.V. Optimized correction of wafer thermal deformations in a lithographic process
US8502954B2 (en) 2004-03-29 2013-08-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7830493B2 (en) 2005-10-04 2010-11-09 Asml Netherlands B.V. System and method for compensating for radiation induced thermal distortions in a substrate or projection system
US7462430B2 (en) * 2005-10-12 2008-12-09 Asml Netherlands B.V. Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device
US7462429B2 (en) * 2005-10-12 2008-12-09 Asml Netherlands B.V. Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate
US7710539B2 (en) 2005-10-12 2010-05-04 Asml Netherlands B.V. Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device
JP2008216554A (en) * 2007-03-02 2008-09-18 Nikon Corp Temperature measuring device, scanning exposure device, exposure method and method for manufacturing device
JP2012084793A (en) * 2010-10-14 2012-04-26 Nikon Corp Exposure method, server device, exposure device and manufacturing method of device
JP2013115348A (en) * 2011-11-30 2013-06-10 Canon Inc Calculation method of variation in imaging characteristics of projection optical system, exposure device and manufacturing method of device
JP2015522843A (en) * 2012-07-06 2015-08-06 エーエスエムエル ネザーランズ ビー.ブイ. lithographic apparatus
US9513568B2 (en) 2012-07-06 2016-12-06 Asml Netherlands B.V. Lithographic apparatus
JPWO2015107976A1 (en) * 2014-01-16 2017-03-23 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
WO2015107976A1 (en) * 2014-01-16 2015-07-23 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
CN105917441A (en) * 2014-01-16 2016-08-31 株式会社尼康 Exposure apparatus and exposure method, and device manufacturing method

Also Published As

Publication number Publication date
JP3047461B2 (en) 2000-05-29

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