JPH04184794A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPH04184794A
JPH04184794A JP31373390A JP31373390A JPH04184794A JP H04184794 A JPH04184794 A JP H04184794A JP 31373390 A JP31373390 A JP 31373390A JP 31373390 A JP31373390 A JP 31373390A JP H04184794 A JPH04184794 A JP H04184794A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
voltage
high
low
output
reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP31373390A
Other versions
JP2586729B2 (en )
Inventor
Shigeki Kono
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To obtain a highly integrated memory with a large capacity using a plurality of bit cells by providing a high/low reading voltage output circuit to output a high or low reading voltage respectively corresponding to a high or low threshold voltage.
CONSTITUTION: This apparatus is made up of an address buffer circuit 1, an X decoder circuit 2, a Y decoder circuit 3, a memory cell array section 4, a Y selector 5 for selecting a digit line, a sense amplifier 6, two output buffer circuits 7 and 10, a word control section 8 and a data latching circuit 9. In this case, a voltage of a reading output is compared with a reference reading voltage of a reading output is compared with a reference reading voltage from a memory M1 according to a reference reading voltage as intermediate value of a threshold voltage to determine whether the threshold voltage is a high or low value with respect to the reference reading voltage and a high or low reading voltage is outputted corresponding to the high or low threshold voltage. This enables practical application of a highly integrated semiconductor apparatus with a large capacity using a plurality of bit cells.
COPYRIGHT: (C)1992,JPO&Japio
JP31373390A 1990-11-19 1990-11-19 A semiconductor memory device Expired - Fee Related JP2586729B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31373390A JP2586729B2 (en) 1990-11-19 1990-11-19 A semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31373390A JP2586729B2 (en) 1990-11-19 1990-11-19 A semiconductor memory device

Publications (2)

Publication Number Publication Date
JPH04184794A true true JPH04184794A (en) 1992-07-01
JP2586729B2 JP2586729B2 (en) 1997-03-05

Family

ID=18044869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31373390A Expired - Fee Related JP2586729B2 (en) 1990-11-19 1990-11-19 A semiconductor memory device

Country Status (1)

Country Link
JP (1) JP2586729B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5721701A (en) * 1995-04-28 1998-02-24 Nec Corporation High read speed multivalued read only memory device
US6181603B1 (en) 1996-05-01 2001-01-30 Hitachi, Ltd. Nonvolatile semiconductor memory device having plural memory cells which store multi-value information
US6226198B1 (en) 1995-01-31 2001-05-01 Hitachi, Ltd. Nonvolatile memory device and refreshing method

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7161830B2 (en) 1995-01-31 2007-01-09 Renesas Technology Corp. Clock synchronized nonvolatile memory device
US7327604B2 (en) 1995-01-31 2008-02-05 Renesas Technology Corporation Clock synchronized non-volatile memory device
US6226198B1 (en) 1995-01-31 2001-05-01 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US6256230B1 (en) 1995-01-31 2001-07-03 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US6366495B2 (en) 1995-01-31 2002-04-02 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US7324375B2 (en) 1995-01-31 2008-01-29 Solid State Storage Solutions, Llc Multi-bits storage memory
US6459614B1 (en) 1995-01-31 2002-10-01 Hitachi, Ltd. Non-volatile memory device and refreshing method
US6747941B2 (en) 1995-01-31 2004-06-08 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6751119B2 (en) 1995-01-31 2004-06-15 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6751120B2 (en) 1995-01-31 2004-06-15 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6757194B2 (en) 1995-01-31 2004-06-29 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6768672B2 (en) 1995-01-31 2004-07-27 Renesas Technology Corp. Clock Synchronized Non-Volatile Memory Device
US7286397B2 (en) 1995-01-31 2007-10-23 Renesas Technology Corporation Clock synchronized nonvolatile memory device
US6801452B2 (en) 1995-01-31 2004-10-05 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6804147B2 (en) 1995-01-31 2004-10-12 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6829163B2 (en) 1995-01-31 2004-12-07 Hitachi, Ltd. Clock synchronized nonvolatile memory device
US6847549B2 (en) 1995-01-31 2005-01-25 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6850434B2 (en) 1995-01-31 2005-02-01 Renesas Technology Corp. Clock synchronized nonvolatile memory device
US6868006B2 (en) 1995-01-31 2005-03-15 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6898118B2 (en) 1995-01-31 2005-05-24 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6912156B2 (en) 1995-01-31 2005-06-28 Renesas Technology Corp. Clock synchronized nonvolatile memory device
US6965525B2 (en) 1995-01-31 2005-11-15 Renesas Technology Corp. Clock synchronized nonvolatile memory device
US7193894B2 (en) 1995-01-31 2007-03-20 Renesas Technology Corp. Clock synchronized nonvolatile memory device
US7542339B2 (en) 1995-01-31 2009-06-02 Solid State Storage Solutions, Llc Clock synchronized non-volatile memory device
US5721701A (en) * 1995-04-28 1998-02-24 Nec Corporation High read speed multivalued read only memory device
US7245532B2 (en) 1996-05-01 2007-07-17 Renesas Technology Corporation Nonvolatile semiconductor memory device which stores multi-value information
US6771537B2 (en) 1996-05-01 2004-08-03 Hitachi, Ltd. Nonvolatile semiconductor memory device which stores multi-value information
US6396736B1 (en) 1996-05-01 2002-05-28 Hitachi, Ltd. Nonvolatile semiconductor memory device which stores multi-value information
US6181603B1 (en) 1996-05-01 2001-01-30 Hitachi, Ltd. Nonvolatile semiconductor memory device having plural memory cells which store multi-value information
US7394697B2 (en) 1996-05-01 2008-07-01 Renesas Technology Corp. Nonvolatile semiconductor memory device which stores multi-value information
US7031187B2 (en) 1996-05-01 2006-04-18 Hitachi, Ltd. Nonvolatile semiconductor memory device which stores multi-value information

Also Published As

Publication number Publication date Type
JP2586729B2 (en) 1997-03-05 grant

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Legal Events

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