JPH04176880A - Method and device for forming pattern - Google Patents
Method and device for forming patternInfo
- Publication number
- JPH04176880A JPH04176880A JP30560990A JP30560990A JPH04176880A JP H04176880 A JPH04176880 A JP H04176880A JP 30560990 A JP30560990 A JP 30560990A JP 30560990 A JP30560990 A JP 30560990A JP H04176880 A JPH04176880 A JP H04176880A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- resist film
- mark
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 16
- 238000005530 etching Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000012544 monitoring process Methods 0.000 claims abstract 5
- 238000001514 detection method Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000003550 marker Substances 0.000 claims 1
- 230000007261 regionalization Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 9
- 239000011651 chromium Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、金属膜のエツチング終点を判定するパターン
形成方法および装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a pattern forming method and apparatus for determining the etching end point of a metal film.
基板として半導体用のホトマスクを例にとり説明する。 This will be explained by taking a semiconductor photomask as an example of a substrate.
ホトマスクの製造プロセスは、次の通りである。The photomask manufacturing process is as follows.
（１）ガラス基板上にクロムを成膜し、さらに、その上
にレジストを塗布する。(1) A chromium film is formed on a glass substrate, and a resist is further applied thereon.
（２）レジスト膜上に光または電子ビームによりパター
ンを描画する。(2) Draw a pattern on the resist film using light or an electron beam.
（３）描画したパターンを現像してレジストを選択的に
除去する。(3) Develop the drawn pattern and selectively remove the resist.
（４）残ったレジストを保護膜としてクロムをエツチン
グして、クロム膜のパターン形成を行う。(4) Using the remaining resist as a protective film, chromium is etched to form a chromium film pattern.
（５）レジスト膜を除去する。(5) Remove the resist film.
本発明は前記（４）のクロム膜のパターン形成の方法お
よび装置に関する。The present invention relates to the method and apparatus for patterning a chromium film as described in (4) above.
半導体の高集積化に伴いホトマスクも微細になり、その
寸法精度も高いものが要求されてきている。この要求に
応するため、前記クロム膜のエツチング終点を光学的に
判定する方法が用いられている。As semiconductors become more highly integrated, photomasks also become finer, and higher dimensional accuracy is required. In order to meet this demand, a method of optically determining the etching end point of the chromium film is used.
一種類の半導体を作るには、１０〜２０枚のマスクが使
用される。このマスクの中には、エツチング面積が全体
の５％程度の点在したパターンから９５％程度のものま
でがある。To make one type of semiconductor, 10 to 20 masks are used. Among these masks, there are patterns in which the etching area ranges from scattered patterns of about 5% to about 95% of the total etching area.
従って、従来の光学的検出方法では、投光部分がエツチ
ングされない部分であることも多く、その場合、終点判
定ができないという欠陥がある。Therefore, in the conventional optical detection method, the light emitting portion is often a portion that is not etched, and in this case, there is a drawback that the end point cannot be determined.
また、この欠陥を改善するため基板を回転する方法もあ
るが、エツチング部分が少な（点在している時、必ずし
も投光部分に被エツチング部が遭遇するとは限らないの
で、終点判定ができない場合が発生するという欠陥があ
る。In addition, there is a method of rotating the substrate to improve this defect, but if the etched area is small (when it is scattered, the etched area does not necessarily meet the light emitting area, so it is not possible to determine the end point. There is a defect that occurs.
〔発明の目的〕
本発明は上記欠陥を除去した新規な発明であって、その
目的：ま、金属膜の終点判定を確実ｔこマ〒うことので
きるパターン形成方法および装置を提イ共することであ
る。[Object of the Invention] The present invention is a novel invention that eliminates the above-mentioned defects, and its purpose is to provide a pattern forming method and apparatus that can reliably determine the end point of a metal film. That's true.
本発明のパターン形成方法は、レジスト膜でノぐターン
ニングされた基板上の金ｉｌｌを薬液でエツチングして
パターンを形成する方法におし１て、基板標識のエツチ
ング状態を光学的に監視して喬冬点判定することを特徴
とする。The pattern forming method of the present invention is a method in which a pattern is formed by etching a gold ill on a substrate that has been turned with a resist film using a chemical solution, and the etching state of the substrate label is optically monitored. It is characterized by determining the winter point.
また、本発明のパターン形成装置番よ、レジスト膜でパ
ターン形成グされた基板上の金属膜を薬液でエツチング
してパターンを形成する装置におシＡて、処理槽と発光
源と光検出手段と前呂己光検出手段を移動する手段とを
具備し基板標１人の反Ｊｌｔ光または透過光の変化を検
出して工・ノチンク゛のキ冬点を判定することを特徴と
する。In addition, the pattern forming apparatus of the present invention includes a processing tank, a light emitting source, and a light detecting means. and a means for moving the front light detection means, and detects a change in anti-Jlt light or transmitted light of one substrate mark to determine the winter point of the cutting edge.
このようなパターン形成方法および装置Ｇこよれば、金
属膜の工・ノチング面積が少なし）ものであっても確実
に終点判定を行えること力く期１寺される。By using such a pattern forming method and apparatus, it is possible to reliably determine the end point even when the metal film has a small processing/notching area.
以下、本発明を図面により詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to the drawings.
第１図は、マスク製造過程の断面図である。３明なガラ
ス基板１の上にクロム２が成膜され、その上にパターン
形成されたレジスト膜３がある。FIG. 1 is a cross-sectional view of the mask manufacturing process. A chromium film 2 is deposited on a transparent glass substrate 1, and a patterned resist film 3 is placed thereon.
このマスクをエツチングするとレジスト膜３の直下のク
ロム２ａは残り、レジスト膜がない部分のクロム２ｂが
選択的に除去される。When this mask is etched, the chromium 2a directly under the resist film 3 remains, and the chromium 2b in the areas where the resist film does not exist is selectively removed.
第２図はマ・スフの平面図である。マスク４のエリア５
が回路を形成するためのパターン形成領域であり、エリ
ア６は標識描画エリアでマスクに必ず描画されている。Figure 2 is a plan view of the Ma Sufu. Mask 4 area 5
is a pattern forming area for forming a circuit, and area 6 is a mark drawing area that is always drawn on the mask.
標識は通常１０〜２０の英字と数字で表現されている。Signs are usually represented by 10 to 20 letters and numbers.
その内容は、 （１）本マスクが使用される半導体名。Its contents are (1) Name of the semiconductor for which this mask is used.
（２）本マスクを使用する工程名。(2) Name of the process in which this mask is used.
（３）描画条件 などである。(3) Drawing conditions etc.
第３図は本発明になるパターン形成装置の縦断面図であ
る。エツチング槽７にエツチング液９を満たし、ステー
ジ８に載置したマスク４の標識描画エリア５に光反射型
のセンサ１０を近接させる。FIG. 3 is a longitudinal sectional view of the pattern forming apparatus according to the present invention. An etching tank 7 is filled with an etching liquid 9, and a light reflection type sensor 10 is brought close to a mark drawing area 5 of a mask 4 placed on a stage 8.
センサ１０はアーム１２の先端に固定されており、アー
ム駆動部１１でアームを上下、旋回動作を行う。センサ
１０はアーム１２の動作によりマスク４上の標識描画エ
リア６の真上に移動して、所定の距離まで降下する。The sensor 10 is fixed to the tip of the arm 12, and the arm driving section 11 moves the arm up and down and rotates it. The sensor 10 moves directly above the mark drawing area 6 on the mask 4 by the operation of the arm 12, and descends to a predetermined distance.
第４図はセンサ１０の反射光の強さの変化を表す図であ
る。エツチング当初は、クロムにより反射光が強いが、
標識のエツチングが進むに従い反射光が減る。反射光の
変化が最も大きい点１５を終点検出点とし、それまでの
時間１６を基準にして、さらに追加エッチ１７を行い工
゛ソチングを終了する。FIG. 4 is a diagram showing changes in the intensity of reflected light from the sensor 10. At the beginning of etching, the reflected light is strong due to chrome, but
As the etching of the sign progresses, the amount of reflected light decreases. The point 15 where the change in reflected light is the largest is defined as the end point detection point, and additional etching 17 is further performed based on the time 16 up to that point, and the etching is completed.
上記説明では光の反射を用いて標識のエツチング状態を
モニタする場合について述べたが、本発明はこれに固定
されるものではなく、透過光によっても全く同様に実現
できることは明らかである。Although the above description has been made regarding the case where the etching state of the label is monitored using reflected light, it is clear that the present invention is not limited to this and can be realized in exactly the same way using transmitted light.
また、上記説明では基板標識が本マスクを使用する工程
名などを表す文字である場合について述ベたが本発明は
これに限定されるものではなくマスクに必ず付加されて
いる図形であれば例えばマスクの位置合せマーク２０ａ
、 ２０ｂ、 ２０ｃ、であっても基板標識として全く
同様に本発明を実現することができることは明らかであ
る。Furthermore, in the above description, the case where the substrate mark is a character representing the name of a process in which the present mask is used is described, but the present invention is not limited to this, and as long as it is a figure that is always added to the mask, for example, Mask alignment mark 20a
, 20b, 20c, it is clear that the present invention can be implemented in exactly the same way as a substrate label.
また、上記説明では半導体用のマスクを用いた場合につ
いて述べたが、本発明はこれに限定されるものではなく
、ウェハのアルミ配線等においても全く同様に実現でき
ることは明らかである。Further, although the above description has been made regarding the case where a semiconductor mask is used, it is clear that the present invention is not limited to this, and can be realized in exactly the same way with aluminum wiring of a wafer, etc.
以上詳述した如く、本発明のパターン形成方法および装
置によれば、描画面積の大小に拘らず、また、描画域の
如何に拘らず、確実にエツチングの終点を判定すること
ができるなど顕著な効果を奏するものである。As detailed above, according to the pattern forming method and apparatus of the present invention, it is possible to reliably determine the end point of etching, regardless of the size of the writing area or the writing area. It is effective.
第１図はマスク製造過程の断面図、第２図はマスクの平
面図、第３図は本発明になるパターン形成装置の縦断面
図、第４図はセンサ１０の反射光の強さの変化を表す図
である。
］・・カラス基板、２・・・クロム、３・・レジス１１
１％、４・・・マスク、５．６・・エリア、７・エノチ
ンク槽、８・・ステージ、９・・・工、千ング液、１０
・・・センサ、１］・・・アーム駆動部、１２・・・ア
ーム、１５・・・反射光の変化が最も大きい点、１６・
・・時間、］７・・・追加エッチ。
特許出願人 ングマ技術工業株式会社代表者
神 １） 薫
オ」圓
ｆ２叱
オう 区
第４（至）FIG. 1 is a sectional view of the mask manufacturing process, FIG. 2 is a plan view of the mask, FIG. 3 is a longitudinal sectional view of the pattern forming apparatus of the present invention, and FIG. 4 is a change in the intensity of reflected light from the sensor 10. FIG. ]...Crow board, 2...Chromium, 3...Resist 11
1%, 4...Mask, 5.6...Area, 7.Enotinku tank, 8...Stage, 9...Work, Sengu liquid, 10
...Sensor, 1]...Arm drive unit, 12...Arm, 15...Point where the change in reflected light is greatest, 16.
...Time,]7...Additional sex. Patent applicant Representative of Nguma Technology Industry Co., Ltd.
God 1) Kaoruo” Enf2 Scolding Ward 4th (To)
Claims (1)
を薬液でエッチングしてパターンを形成する方法におい
て、基板標識のエッチング状態を光学的に監視して終点
判定することを特徴としたパターン形成方法。 ２、前記光学的監視が反射光監視であることを特徴とし
た前記特許請求の範囲第１項記載のパターン形成方法。 ３、前記光学的監視が透過光監視であることを特徴とし
た前記特許請求の範囲第１項記載のパターン形成方法。 ４、レジスト膜でパターンニングされた基板上の金属膜
を薬液でエッチングしてパターンを形成する装置におい
て、処理槽と発光源と光検出手段と前記光検出手段を移
動する手段とを具備し基板標識の反射光または透過光の
変化を検出してエッチングの終点を判定することを特徴
としたパターン形成装置。[Claims] 1. In a method of forming a pattern by etching a metal film on a substrate patterned with a resist film with a chemical solution, the etching state of the substrate mark is optically monitored to determine the end point. Featured pattern formation method. 2. The pattern forming method according to claim 1, wherein the optical monitoring is reflected light monitoring. 3. The pattern forming method according to claim 1, wherein the optical monitoring is transmitted light monitoring. 4. An apparatus for forming a pattern by etching a metal film on a substrate patterned with a resist film with a chemical solution, comprising a processing tank, a light emitting source, a light detection means, and a means for moving the light detection means; A pattern forming apparatus characterized in that the end point of etching is determined by detecting changes in reflected light or transmitted light of a marker.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30560990A JPH04176880A (en) | 1990-11-09 | 1990-11-09 | Method and device for forming pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30560990A JPH04176880A (en) | 1990-11-09 | 1990-11-09 | Method and device for forming pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04176880A true JPH04176880A (en) | 1992-06-24 |
Family
ID=17947205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30560990A Pending JPH04176880A (en) | 1990-11-09 | 1990-11-09 | Method and device for forming pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04176880A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007301719A (en) * | 2004-09-27 | 2007-11-22 | Idc Llc | Process control monitor regarding interferometric modulator |
-
1990
- 1990-11-09 JP JP30560990A patent/JPH04176880A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007301719A (en) * | 2004-09-27 | 2007-11-22 | Idc Llc | Process control monitor regarding interferometric modulator |
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