JPH04171833A - Method of marking semiconductor device - Google Patents
Method of marking semiconductor deviceInfo
- Publication number
- JPH04171833A JPH04171833A JP30190490A JP30190490A JPH04171833A JP H04171833 A JPH04171833 A JP H04171833A JP 30190490 A JP30190490 A JP 30190490A JP 30190490 A JP30190490 A JP 30190490A JP H04171833 A JPH04171833 A JP H04171833A
- Authority
- JP
- Japan
- Prior art keywords
- marking
- ink
- mold resin
- semiconductor device
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000011347 resin Substances 0.000 abstract description 30
- 229920005989 resin Polymers 0.000 abstract description 30
- 230000008034 disappearance Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 241000270281 Coluber constrictor Species 0.000 description 1
- OQZCSNDVOWYALR-UHFFFAOYSA-N flurochloridone Chemical compound FC(F)(F)C1=CC=CC(N2C(C(Cl)C(CCl)C2)=O)=C1 OQZCSNDVOWYALR-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明に、半導体装置にマーキングする際のマーキン
グ方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a marking method for marking a semiconductor device.
第４図に従来の半導体装置のモールド樹脂に直接インク
によってマーキングを行う場合の半導体装置のモールド
樹脂の断面図、第５図ｒｉ従来の半導体装置のモールド
樹脂の表面に、けがきによってマーキングを行う場合の
半導体装置のモールド樹脂の断面図であり、図におりて
。Fig. 4 is a cross-sectional view of the mold resin of a semiconductor device when marking is performed directly on the mold resin of a conventional semiconductor device with ink, and Fig. 5 is a sectional view of the mold resin of a conventional semiconductor device in which marking is performed on the surface of the mold resin of a conventional semiconductor device by scribing. FIG.
：３）はモールド樹脂、１４１はマーキング溝、＋６１
ｒｉインクである。:3) is mold resin, 141 is marking groove, +61
It is ri ink.
次に動作について説明する。Next, the operation will be explained.
第４図において、モールド樹脂１３１の表面にそのまま
インク（６）を塗り、塗られたインク（６１の形でマー
クをつける。In FIG. 4, ink (6) is applied directly to the surface of the mold resin 131, and a mark is made in the form of the applied ink (61).
第６図におｈで、モールド樹脂（３１の表面をレーザー
等でけがくことによってマーキング溝（４）を設け、そ
の形でマークをつける。In FIG. 6, at h, a marking groove (4) is provided by marking the surface of the mold resin (31) with a laser or the like, and a mark is made in that shape.
促米の半導体装置のマーキング方法は以上のように行わ
れているので、モールド樹脂にインクｋ 委る方法では
、インクの部分がモールド樹脂の表面より突き出ている
ので、マークが消えるという問題点があった。またモー
ルド樹脂にレーザー等でけがいてマーキング＃Ｉｔ作る
方法では、けがいた表面に異物などが入り、マークが見
にくくなるという問題があった。The method of marking semiconductor devices in the promotion is carried out as described above, so the method in which ink is applied to the mold resin has the problem that the mark disappears because the ink part protrudes from the surface of the mold resin. there were. Further, in the method of making the marking #It by scribing the molded resin with a laser or the like, there is a problem that foreign matter gets into the scribed surface, making the mark difficult to see.
この発明は、上記のような問題α１に解決する九めにな
されたもので、マークが消えず、また、見えにくくなら
ない半導体装置のマーキング方法を得るととｒ目的とす
る。This invention is the ninth to solve the above-mentioned problem α1, and its object is to provide a marking method for semiconductor devices in which marks do not disappear or become difficult to see.
この発明に係るマーキング方法は、モールド樹脂表面を
レーサー等でけかくことによってマーキングＳを設け、
上記マーキング１１Ｉにインク＊？入れることにより、
マーキング金石なうようにしたものである。The marking method according to the present invention provides a marking S by cutting the molded resin surface with a racer or the like,
Ink* on marking 11I above? By putting
The markings are made to look like gold stones.
この発明によるマーキング方法は、けがきによって設け
たマーキング溝にインクが埋められている次め哨えに＜
〈、さらに、異″４！Ｊ等が入ってマーキングが見えに
くくなることがなくなる。In the marking method according to the present invention, a marking groove provided by scribing is filled with ink, and then the marking groove is filled with ink.
〈Furthermore, the markings will not become difficult to see due to the presence of foreign characters such as ``4!J''.
以下、この発明の一実施列ｒ図について説明する。第１
図は半導体装置のマーキング方法を示すモールド樹脂の
断面図、ｇＭ図および＠８図にそれぞれ第１図に示すマ
ーキング方法の途中の工程を示すモールド樹脂の断面図
で、第８図はけかきに１ってマーキング＃を設けた場合
。Hereinafter, a diagram of one embodiment of the present invention will be explained. 1st
The figure is a cross-sectional view of the mold resin showing the marking method for semiconductor devices, gM diagram and @8 are cross-sectional views of the mold resin showing intermediate steps of the marking method shown in Figure 1, respectively. 1 if marking # is provided.
第８図はマーキング溝を設けたモールド樹脂の表面全体
にインクを塗付した場合を示す。図において３も＋４１
は第４図及び第５図の従来例に示したものと同等である
ので説明を省略する。FIG. 8 shows the case where ink is applied to the entire surface of the mold resin provided with marking grooves. In the figure, 3 is also +41
Since this is the same as that shown in the conventional example shown in FIGS. 4 and 5, the explanation thereof will be omitted.
山にモールド表面、）２１は橿められたインク％１組は
全体に塗付されたインクである。21 is the ink that has been rubbed on the mold surface, and % 1 is the ink that has been applied to the entire surface.
次に動作について説明する。Next, the operation will be explained.
第１図の構成ｔ−実現するため、モールド樹脂＋３１は
当初、標準より若干庫くしておく。In order to realize the configuration t- shown in FIG. 1, the mold resin +31 is initially stored at a slightly higher temperature than standard.
そして第Ｓ図に示すようにモールド表面＋ｌＩ ｆレー
ザー等で、厚くモールドされた分だけ深くまで、マーキ
ングの形にけかくことによってマーキング溝；４１ヲ設
ける。次に、マーキング溝１４１ ｔ−設けたモールド
樹脂；３）の表面全体に、第８図に示すようにインクを
塗付し、全体に塗付され九インク１６）ｔ−設ける。更
に全体に塗付されたインク１１１１とモールド樹脂（３
１の表面を削って、モールド樹脂（３１を標準の厚さに
すると共に第１図に示すように埋められたインク＋！ｌ
ｆ露出させ、マーキングが実現する。Then, as shown in FIG. S, a marking groove 41 is formed on the mold surface with a laser or the like to a depth corresponding to the thickness of the mold. Next, as shown in FIG. 8, ink is applied to the entire surface of the mold resin (3) provided with the marking groove 141t, and the ink is applied to the entire surface. Furthermore, ink 1111 and mold resin (3
Scrape the surface of 1, make the mold resin (31 the standard thickness, and fill it with ink+!l as shown in Figure 1)
f exposure and marking is achieved.
なお上記実３１１ ％Ｊではモールド樹脂３１の表面？
けすることにより、モールド表面ＩＩＩ Ｋ埋められ九
インク１り全露出する方法を示したが、マーキング溝１
４１ＦＣさえインクが入れば、どのような方法であって
もよい。In addition, in the above actual 311% J, is the surface of the mold resin 31?
We have shown a method of completely exposing the mold surface by filling the mold surface IIIK with marking groove 1.
Any method may be used as long as the ink can be inserted into 41FC.
以上のように、この発明によれば、マーキングを、半導
体装置のモールド樹脂のけかいた面にインク等を入れる
という方法によシ行うので、マーク哨え等が防止され、
信頼度の高い半導体装置のマーキング方法を得られる効
果がある。As described above, according to the present invention, marking is performed by applying ink or the like to the protruding surface of the mold resin of the semiconductor device, so that marking is prevented.
This has the effect of providing a highly reliable marking method for semiconductor devices.
第１図はこの発明に係る半導体ｆｅｌｌのマーキング方
法の一実ｍ例によるモールド樹脂の断面図、第ｇ ｒ＠
およびＨｓ図は第１図に示すマーキング方法の途中の工
程を示すモールド樹脂の断面図で、第８図はけかきによ
ってマーキング溝を設けた場合、第３図はマーキングａ
ｌｔ設けたモールド樹脂の表面全体にインクを塗付した
場合を示すａ ＳＩＩ ４図に従来の半導体装置のモー
ルド樹脂に、直接、インクによってマーキングを行う場
合のモールド樹脂の断面図、第５図は従来の半導体装置
のモールド樹脂にけがきによってマーキングを行う場合
のモールド樹脂の断面図である。
図において、（１）はモールド表面１．２１は城められ
たインク、３１はモールド樹脂、・４１はマーキングＩ
ｌｌ、・６１＃ｉ全体に塗付されたインクである。
尚１図中、同−符４！Ｊ−は同一、又は相当部分を示す
。FIG. 1 is a cross-sectional view of a molded resin according to an example of the marking method for a semiconductor fell according to the present invention.
The and Hs diagrams are cross-sectional views of the molded resin showing intermediate steps in the marking method shown in Figure 1.
A SII 4 shows a case where ink is applied to the entire surface of the mold resin provided in the conventional semiconductor device. FIG. 2 is a cross-sectional view of a mold resin of a conventional semiconductor device when marking is performed on the mold resin by scribing. In the figure, (1) is the mold surface 1, 21 is the ink, 31 is the mold resin, and 41 is the marking I.
This is the ink applied to the entire ll, 61#i. In addition, the same - sign 4 in figure 1! J- indicates the same or equivalent part.
Claims (1)
をけがき、そこにインク等を入れたことを特徴とする半
導体装置のマーキング方法。1. A method for marking semiconductor devices, which comprises scribing marking characters, etc., and applying ink, etc. thereto.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30190490A JPH04171833A (en) | 1990-11-05 | 1990-11-05 | Method of marking semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30190490A JPH04171833A (en) | 1990-11-05 | 1990-11-05 | Method of marking semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04171833A true JPH04171833A (en) | 1992-06-19 |
Family
ID=17902519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30190490A Pending JPH04171833A (en) | 1990-11-05 | 1990-11-05 | Method of marking semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04171833A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0935287A3 (en) * | 1998-02-09 | 2000-05-03 | Sharp Kabushiki Kaisha | Molding die and marking method for semiconductor devices |
| WO2009069577A1 (en) * | 2007-11-26 | 2009-06-04 | National Institute Of Advanced Industrial Science And Technology | Mold removing method |
-
1990
- 1990-11-05 JP JP30190490A patent/JPH04171833A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0935287A3 (en) * | 1998-02-09 | 2000-05-03 | Sharp Kabushiki Kaisha | Molding die and marking method for semiconductor devices |
| US6270712B1 (en) | 1998-02-09 | 2001-08-07 | Sharp Kabushiki Kaisha | Molding die and marking method for semiconductor devices |
| WO2009069577A1 (en) * | 2007-11-26 | 2009-06-04 | National Institute Of Advanced Industrial Science And Technology | Mold removing method |
| US8309882B2 (en) | 2007-11-26 | 2012-11-13 | National Institute Of Advanced Industrial Science And Technology | Mold removing method |
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