JPH04171765A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH04171765A
JPH04171765A JP29722690A JP29722690A JPH04171765A JP H04171765 A JPH04171765 A JP H04171765A JP 29722690 A JP29722690 A JP 29722690A JP 29722690 A JP29722690 A JP 29722690A JP H04171765 A JPH04171765 A JP H04171765A
Authority
JP
Japan
Prior art keywords
drain
region
substrate
resistance
out region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29722690A
Other languages
Japanese (ja)
Other versions
JP3008480B2 (en
Inventor
Tsutomu Matsushita
Teruyoshi Mihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP2297226A priority Critical patent/JP3008480B2/en
Publication of JPH04171765A publication Critical patent/JPH04171765A/en
Application granted granted Critical
Publication of JP3008480B2 publication Critical patent/JP3008480B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642Isolation within the component, i.e. internal isolation
    • H01L29/0649Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • H01L29/0696Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Abstract

PURPOSE: To increase a cell density by providing a drain lead-out region of which the periphery is insulated by an insulating film and which reaches a drain region in the base of a substrate.
CONSTITUTION: In a part of an N epitaxial layer 102 on an N+ substrate 112, a drain lead-out region 105 of which the periphery is insulated from the layer 102 by an insulating film 106 and the part of the lower side is connected to the substrate 112, is formed. On the surface of the drain lead-out region 105, an N+ drain contact region 101 is formed so as to minimize a contact resistance with a drain electrode 113. On the side below the region 105, the N+ substrate 112 of low resistance connects the drain lead-out region 105 with the N epitaxial layer 102 of relatively high resistance and thereby a resistance in a bulk is made low. According to this constitution, a cell density can be increased while a drain-source breakdown voltage is maintained at a prescribed value or above, and also an ON resistance can be reduced sufficiently.
COPYRIGHT: (C)1992,JPO&Japio
JP2297226A 1990-11-05 1990-11-05 Semiconductor device Expired - Fee Related JP3008480B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2297226A JP3008480B2 (en) 1990-11-05 1990-11-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2297226A JP3008480B2 (en) 1990-11-05 1990-11-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH04171765A true JPH04171765A (en) 1992-06-18
JP3008480B2 JP3008480B2 (en) 2000-02-14

Family

ID=17843803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2297226A Expired - Fee Related JP3008480B2 (en) 1990-11-05 1990-11-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JP3008480B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7531876B2 (en) 2004-09-24 2009-05-12 Kabushiki Kaisha Toshiba Semiconductor device having power semiconductor elements
JP2009135423A (en) * 2007-11-09 2009-06-18 Denso Corp Semiconductor device
US8097921B2 (en) 2007-11-09 2012-01-17 Denso Corporation Semiconductor device with high-breakdown-voltage transistor
JP2012054346A (en) * 2010-08-31 2012-03-15 Denso Corp Semiconductor device
JP2016536782A (en) * 2013-10-03 2016-11-24 日本テキサス・インスツルメンツ株式会社 Trench Gate Trench Field Plate Semi-Vertical Semi-lateral MOSFET
US10141399B2 (en) 2015-03-16 2018-11-27 Kabushiki Kaisha Toshiba Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7531876B2 (en) 2004-09-24 2009-05-12 Kabushiki Kaisha Toshiba Semiconductor device having power semiconductor elements
JP2009135423A (en) * 2007-11-09 2009-06-18 Denso Corp Semiconductor device
JP2010206235A (en) * 2007-11-09 2010-09-16 Denso Corp Semiconductor device
US8097921B2 (en) 2007-11-09 2012-01-17 Denso Corporation Semiconductor device with high-breakdown-voltage transistor
US8436419B2 (en) 2007-11-09 2013-05-07 Denso Corporation Semiconductor device with high-breakdown-voltage transistor
JP2012054346A (en) * 2010-08-31 2012-03-15 Denso Corp Semiconductor device
JP2016536782A (en) * 2013-10-03 2016-11-24 日本テキサス・インスツルメンツ株式会社 Trench Gate Trench Field Plate Semi-Vertical Semi-lateral MOSFET
US10141399B2 (en) 2015-03-16 2018-11-27 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
JP3008480B2 (en) 2000-02-14

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