JPH04157766A - Manufacture of silicon gate p-channel mos semiconductor device - Google Patents

Manufacture of silicon gate p-channel mos semiconductor device

Info

Publication number
JPH04157766A
JPH04157766A JP28279890A JP28279890A JPH04157766A JP H04157766 A JPH04157766 A JP H04157766A JP 28279890 A JP28279890 A JP 28279890A JP 28279890 A JP28279890 A JP 28279890A JP H04157766 A JPH04157766 A JP H04157766A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
manufacture
lower part
silicon gate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28279890A
Inventor
Kenji Chishima
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen

Abstract

PURPOSE: To nitride lower part of a silicon gate electrode and to suppress punchthrough of boron by forming a silicon gate electrode, and then ion implanting nitrogen N so that a peak of a concentration distribution in a depth direction occurs at the lower part of the electrode.
CONSTITUTION: After a channel stopper 2, a selective oxide film 3 and a gate oxide film 4 are formed on a substrate 1, a polyside film 7 made of a p-type polysilicon film 5 and a tungsten (or molybdenum) silicide film 6 is formed. Then, an n-channel MOSFET forming region is masked with a resist film 8. Then, nitrogen ions N+ are implanted so that a peak of concentration distribution in a depth direction occurs at the lower part of the film 5 through the tungsten (or molybdenum) silicide film 7. Then, manufacture is continued by the same method as a conventional manufacture of a MOS semiconductor device. Unnecessary ion implantation of the nitrogen N to an n-channel NOSFET region can be prevented by forming the film 8 as a mask.
COPYRIGHT: (C)1992,JPO&Japio
JP28279890A 1990-10-20 1990-10-20 Manufacture of silicon gate p-channel mos semiconductor device Pending JPH04157766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28279890A JPH04157766A (en) 1990-10-20 1990-10-20 Manufacture of silicon gate p-channel mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28279890A JPH04157766A (en) 1990-10-20 1990-10-20 Manufacture of silicon gate p-channel mos semiconductor device

Publications (1)

Publication Number Publication Date
JPH04157766A true true JPH04157766A (en) 1992-05-29

Family

ID=17657230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28279890A Pending JPH04157766A (en) 1990-10-20 1990-10-20 Manufacture of silicon gate p-channel mos semiconductor device

Country Status (1)

Country Link
JP (1) JPH04157766A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06326316A (en) * 1993-05-13 1994-11-25 Nec Corp Manufacture of semiconductor device
FR2709599A1 (en) * 1993-09-02 1995-03-10 Mitsubishi Electric Corp A semiconductor device especially MOS type nitrogen doping and its manufacturing method.
US5514902A (en) * 1993-09-16 1996-05-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having MOS transistor
WO1997049121A1 (en) * 1996-06-19 1997-12-24 Advanced Micro Devices, Inc. Cmos gate structure and method for making same
FR2763425A1 (en) * 1997-05-14 1998-11-20 Mitsubishi Electric Corp A semiconductor device having a polysilicon gate containing a doping impurity and nitrogen, and method of manufacture
JPH11204793A (en) * 1997-10-24 1999-07-30 Lsi Logic Corp Electronic device gate oxide hardening method and semiconductor device
US6027977A (en) * 1997-05-14 2000-02-22 Nec Corporation Method of fabricating semiconductor device with MIS structure
JP2002170889A (en) * 2000-11-30 2002-06-14 Nec Corp Semiconductor device and manufacturing method thereof
US6441441B1 (en) 1996-06-07 2002-08-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
JP2002334939A (en) * 2001-05-10 2002-11-22 Fujitsu Ltd Semiconductor device and method of manufacturing the same
US6815295B1 (en) 1997-05-14 2004-11-09 Renesas Technology Corp. Method of manufacturing field effect transistors
JP2008103738A (en) * 1993-09-02 2008-05-01 Renesas Technology Corp Semiconductor device and method of manufacturing the same
JP2009514225A (en) * 2005-10-26 2009-04-02 フリースケール セミコンダクター インコーポレイテッド A method of forming a semiconductor structure and the structure using a reduced gate doping
JP2011029661A (en) * 1993-09-02 2011-02-10 Renesas Electronics Corp Semiconductor device and method of manufacturing the same

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06326316A (en) * 1993-05-13 1994-11-25 Nec Corp Manufacture of semiconductor device
FR2709599A1 (en) * 1993-09-02 1995-03-10 Mitsubishi Electric Corp A semiconductor device especially MOS type nitrogen doping and its manufacturing method.
JP2011029661A (en) * 1993-09-02 2011-02-10 Renesas Electronics Corp Semiconductor device and method of manufacturing the same
JP2008103738A (en) * 1993-09-02 2008-05-01 Renesas Technology Corp Semiconductor device and method of manufacturing the same
US6521527B1 (en) 1993-09-02 2003-02-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of fabricating the same
US6300664B1 (en) 1993-09-02 2001-10-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of fabricating the same
US6475887B1 (en) 1993-09-16 2002-11-05 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device
US5514902A (en) * 1993-09-16 1996-05-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having MOS transistor
US6441441B1 (en) 1996-06-07 2002-08-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
WO1997049121A1 (en) * 1996-06-19 1997-12-24 Advanced Micro Devices, Inc. Cmos gate structure and method for making same
US5872049A (en) * 1996-06-19 1999-02-16 Advanced Micro Devices, Inc. Nitrogenated gate structure for improved transistor performance and method for making same
US5936287A (en) * 1996-06-19 1999-08-10 Advanced Micro Devices, Inc. Nitrogenated gate structure for improved transistor performance and method for making same
US6027977A (en) * 1997-05-14 2000-02-22 Nec Corporation Method of fabricating semiconductor device with MIS structure
US6815295B1 (en) 1997-05-14 2004-11-09 Renesas Technology Corp. Method of manufacturing field effect transistors
US5998828A (en) * 1997-05-14 1999-12-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having nitrogen introduced in its polysilicon gate
FR2763425A1 (en) * 1997-05-14 1998-11-20 Mitsubishi Electric Corp A semiconductor device having a polysilicon gate containing a doping impurity and nitrogen, and method of manufacture
JPH11204793A (en) * 1997-10-24 1999-07-30 Lsi Logic Corp Electronic device gate oxide hardening method and semiconductor device
JP2002170889A (en) * 2000-11-30 2002-06-14 Nec Corp Semiconductor device and manufacturing method thereof
JP2002334939A (en) * 2001-05-10 2002-11-22 Fujitsu Ltd Semiconductor device and method of manufacturing the same
JP2009514225A (en) * 2005-10-26 2009-04-02 フリースケール セミコンダクター インコーポレイテッド A method of forming a semiconductor structure and the structure using a reduced gate doping
JP4942757B2 (en) * 2005-10-26 2012-05-30 フリースケール セミコンダクター インコーポレイテッド A method of forming a semiconductor structure using a reduced gate doping

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