JPH04155694A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPH04155694A
JPH04155694A JP27982890A JP27982890A JPH04155694A JP H04155694 A JPH04155694 A JP H04155694A JP 27982890 A JP27982890 A JP 27982890A JP 27982890 A JP27982890 A JP 27982890A JP H04155694 A JPH04155694 A JP H04155694A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
line
write
bit
signal
tr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27982890A
Inventor
Katsuhiko Sakurai
Original Assignee
Fujitsu Ltd
Fujitsu Vlsi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To accelerate a writing speed while preventing an erroneous writing by providing a capacitor for storing charge required to write cell information in one EPROM, at a bit line.
CONSTITUTION: Capacitors C1, C2 are connected to bit lines BL1, BL2. If information is written in a cell transistor Tr1, when a first clock signal CLK 1 is input, a transfer gate 12a is turned ON, a high voltage write signal WR1 is simultaneously applied from a write/reader 4 to a bit line 12a, and the capacitor C1 is charged. Then, a high voltage is applied from a row decoder 2 to the word line WL1 based on a second clock signal CLK2, charging charge flows from the C1 to the Tr1 to write it, and the potential of the line BL1 is, after finishing, lowered to a ground potential.
COPYRIGHT: (C)1992,JPO&Japio
JP27982890A 1990-10-18 1990-10-18 Semiconductor memory Pending JPH04155694A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27982890A JPH04155694A (en) 1990-10-18 1990-10-18 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27982890A JPH04155694A (en) 1990-10-18 1990-10-18 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPH04155694A true true JPH04155694A (en) 1992-05-28

Family

ID=17616488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27982890A Pending JPH04155694A (en) 1990-10-18 1990-10-18 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPH04155694A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994027295A1 (en) * 1993-05-11 1994-11-24 Nkk Corporation Non-volatile memory device and method for adjusting the threshold value thereof
US5602779A (en) * 1994-11-11 1997-02-11 Nkk Corporation Nonvolatile multivalue memory
US5615146A (en) * 1994-11-11 1997-03-25 Nkk Corporation Nonvolatile memory with write data latch
US5623444A (en) * 1994-08-25 1997-04-22 Nippon Kokan Kk Electrically-erasable ROM with pulse-driven memory cell transistors
US5661686A (en) * 1994-11-11 1997-08-26 Nkk Corporation Nonvolatile semiconductor memory
US5808338A (en) * 1994-11-11 1998-09-15 Nkk Corporation Nonvolatile semiconductor memory
US5812458A (en) * 1995-07-31 1998-09-22 Nkk Corporation Electrically-erasable and programmable ROM with pulse-driven memory cells
US5818753A (en) * 1995-07-31 1998-10-06 Nkk Corporation Electrically-erasable and programmable ROM with pulse-driven memory cell
US6067253A (en) * 1995-05-30 2000-05-23 Nkk Corporation Nonvolatile semiconductor memory device capable of suppressing a variation of the bit line potential
JP2007200545A (en) * 2001-01-12 2007-08-09 Renesas Technology Corp Nonvolatile semiconductor memory device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994027295A1 (en) * 1993-05-11 1994-11-24 Nkk Corporation Non-volatile memory device and method for adjusting the threshold value thereof
JPH07508121A (en) * 1993-05-11 1995-09-07
US5729494A (en) * 1993-05-11 1998-03-17 Nkk Corporation Non-volatile memory with floating gate type cell transistors and method for adjusting threshold valves of these transistors
US5623444A (en) * 1994-08-25 1997-04-22 Nippon Kokan Kk Electrically-erasable ROM with pulse-driven memory cell transistors
US5602779A (en) * 1994-11-11 1997-02-11 Nkk Corporation Nonvolatile multivalue memory
US5615146A (en) * 1994-11-11 1997-03-25 Nkk Corporation Nonvolatile memory with write data latch
US5661686A (en) * 1994-11-11 1997-08-26 Nkk Corporation Nonvolatile semiconductor memory
US5808338A (en) * 1994-11-11 1998-09-15 Nkk Corporation Nonvolatile semiconductor memory
US6067253A (en) * 1995-05-30 2000-05-23 Nkk Corporation Nonvolatile semiconductor memory device capable of suppressing a variation of the bit line potential
US5812458A (en) * 1995-07-31 1998-09-22 Nkk Corporation Electrically-erasable and programmable ROM with pulse-driven memory cells
US5818753A (en) * 1995-07-31 1998-10-06 Nkk Corporation Electrically-erasable and programmable ROM with pulse-driven memory cell
JP2007200545A (en) * 2001-01-12 2007-08-09 Renesas Technology Corp Nonvolatile semiconductor memory device

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