JPH04155315A - Manufacture of multi-layer film wiring body - Google Patents

Manufacture of multi-layer film wiring body

Info

Publication number
JPH04155315A
JPH04155315A JP27896590A JP27896590A JPH04155315A JP H04155315 A JPH04155315 A JP H04155315A JP 27896590 A JP27896590 A JP 27896590A JP 27896590 A JP27896590 A JP 27896590A JP H04155315 A JPH04155315 A JP H04155315A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
electrode
regist
layer
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27896590A
Inventor
Toshiyuki Koshimo
Eiji Matsuzaki
Mitsuo Nakatani
Takao Takano
Yoshifumi Yoritomi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To improve level difference connecting ability to the next laminated conductive film without damaging low resistivity given through an Al film by specifying an etching process for a multi-layer metallic film.
CONSTITUTION: A regist pattern 4 is formed on a substrate 1, Cr film 2 and Al film 3, and only the Al film is etched by phosphoric acid system solution with the regist pattern used as a mask, and only the Cr film is then etched by secondary cerium nitrate ammonium solution with the regist pattern and the etched Al film used as the mask. In addition to that, the side-etching of the Al film is executed so far as 0.5μm or more from the end of the Cr film using phosphoric acid system solution. The regist pattern is finally removed. For example, in a thin film transister matrix in which the individual gate electrode of a thin film transister composed of a gate electrode 13, a source electrode 16, a drain electrode 17, a gate insulating layer 13 and semiconductors 14, 15 on an insulating substrate 11 is connected with the first bus line, and the individual drain electrode with the second bus line, and the individual source electrode with a picture element electrode 18, a multi-layer film wiring body composed in such a way is used as a bus line or the electrode.
COPYRIGHT: (C)1992,JPO&Japio
JP27896590A 1990-10-19 1990-10-19 Manufacture of multi-layer film wiring body Pending JPH04155315A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27896590A JPH04155315A (en) 1990-10-19 1990-10-19 Manufacture of multi-layer film wiring body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27896590A JPH04155315A (en) 1990-10-19 1990-10-19 Manufacture of multi-layer film wiring body

Publications (1)

Publication Number Publication Date
JPH04155315A true true JPH04155315A (en) 1992-05-28

Family

ID=17604539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27896590A Pending JPH04155315A (en) 1990-10-19 1990-10-19 Manufacture of multi-layer film wiring body

Country Status (1)

Country Link
JP (1) JPH04155315A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005215330A (en) * 2004-01-29 2005-08-11 Kyocera Corp Liquid crystal display device and method for manufacturing the same
US7012029B2 (en) 2002-12-25 2006-03-14 Nec Lcd Technologies, Ltd. Method of forming a lamination film pattern and improved lamination film pattern
USRE41363E1 (en) 1995-11-21 2010-06-01 Samsung Electronics Co., Ltd. Thin film transistor substrate
JP2012080087A (en) * 2010-09-03 2012-04-19 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method therefor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE41363E1 (en) 1995-11-21 2010-06-01 Samsung Electronics Co., Ltd. Thin film transistor substrate
US7012029B2 (en) 2002-12-25 2006-03-14 Nec Lcd Technologies, Ltd. Method of forming a lamination film pattern and improved lamination film pattern
US7554207B2 (en) 2002-12-25 2009-06-30 Nec Lcd Technologies, Ltd. Method of forming a lamination film pattern and improved lamination film pattern
JP2005215330A (en) * 2004-01-29 2005-08-11 Kyocera Corp Liquid crystal display device and method for manufacturing the same
JP4565852B2 (en) * 2004-01-29 2010-10-20 京セラ株式会社 A method of manufacturing a liquid crystal display device
JP2012080087A (en) * 2010-09-03 2012-04-19 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method therefor
US9293595B2 (en) 2010-09-03 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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