JPH04153997A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPH04153997A
JPH04153997A JP27749190A JP27749190A JPH04153997A JP H04153997 A JPH04153997 A JP H04153997A JP 27749190 A JP27749190 A JP 27749190A JP 27749190 A JP27749190 A JP 27749190A JP H04153997 A JPH04153997 A JP H04153997A
Authority
JP
Japan
Prior art keywords
load
power source
output
source voltage
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27749190A
Other languages
Japanese (ja)
Other versions
JP2707825B2 (en
Inventor
Takeshi Honma
Kenji Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP27749190A priority Critical patent/JP2707825B2/en
Publication of JPH04153997A publication Critical patent/JPH04153997A/en
Application granted granted Critical
Publication of JP2707825B2 publication Critical patent/JP2707825B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE: To extend operation range by providing a potential generation circuit on the gate of a load Tr so as to deteriorate the current driving ability of the load Tr of a sense amplifier by means of the rise of the power source voltage.
CONSTITUTION: In a gate of a load Tr13 of the sense amplifier on a reference side, the output of a potential generation circuit 18 to which the output voltage depends on is connected to a power source voltage vcc. Therefore, the value of output voltage VL increases accompanied by the increase of the power source voltage vcc. When this output voltage VL enters the gate of the load Tr13, the current driving ability of the load Tr13 deteriorates inversely by the increase of the power source voltage vcc. The deterioration of the current driving ability of the load Tr13 means the rise of the resistance value on the operation of the load Tr13, and the value of the sense amplifier output 12 Vref deteriorates. Thus, the operation range is extended and the operation can be performed from low voltage to high voltage.
COPYRIGHT: (C)1992,JPO&Japio
JP27749190A 1990-10-15 1990-10-15 Semiconductor integrated circuit device Expired - Lifetime JP2707825B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27749190A JP2707825B2 (en) 1990-10-15 1990-10-15 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27749190A JP2707825B2 (en) 1990-10-15 1990-10-15 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPH04153997A true JPH04153997A (en) 1992-05-27
JP2707825B2 JP2707825B2 (en) 1998-02-04

Family

ID=17584341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27749190A Expired - Lifetime JP2707825B2 (en) 1990-10-15 1990-10-15 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JP2707825B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08221984A (en) * 1995-02-17 1996-08-30 Nec Corp Semiconductor memory circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5647995A (en) * 1979-09-21 1981-04-30 Hitachi Ltd Memory device
JPS5968897A (en) * 1982-10-12 1984-04-18 Hitachi Ltd Sense amplifier for eprom device
JPS60167198A (en) * 1984-02-09 1985-08-30 Toshiba Corp Semiconductor storage circuit
JPS62197996A (en) * 1986-02-24 1987-09-01 Toshiba Corp Sense amplifier for semiconductor memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5647995A (en) * 1979-09-21 1981-04-30 Hitachi Ltd Memory device
JPS5968897A (en) * 1982-10-12 1984-04-18 Hitachi Ltd Sense amplifier for eprom device
JPS60167198A (en) * 1984-02-09 1985-08-30 Toshiba Corp Semiconductor storage circuit
JPS62197996A (en) * 1986-02-24 1987-09-01 Toshiba Corp Sense amplifier for semiconductor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08221984A (en) * 1995-02-17 1996-08-30 Nec Corp Semiconductor memory circuit

Also Published As

Publication number Publication date
JP2707825B2 (en) 1998-02-04

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