JPH04150212A - Etching method for crystal substrate - Google Patents

Etching method for crystal substrate

Info

Publication number
JPH04150212A
JPH04150212A JP27128490A JP27128490A JPH04150212A JP H04150212 A JPH04150212 A JP H04150212A JP 27128490 A JP27128490 A JP 27128490A JP 27128490 A JP27128490 A JP 27128490A JP H04150212 A JPH04150212 A JP H04150212A
Authority
JP
Japan
Prior art keywords
crystal substrate
laser beam
crystal
irradiates
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27128490A
Inventor
Takashi Kasahara
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP27128490A priority Critical patent/JPH04150212A/en
Publication of JPH04150212A publication Critical patent/JPH04150212A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To prevent an external shape from being ununiformed by allowing a laser beam to irradiate to a crystal substrate in a crystal etching solution so as to cause alteration to the crystal substrate receiving the laser beam thereby promoting etching.
CONSTITUTION: A laser beam 33 from a laser generator stopped down by a mask 27 irradiates a crystal substrate 25 in an etching room 24 through an upper cover 26 of a sapphire glass. A resist 34 is coated in advance to the surface of the crystal substrate 25 and a tuning fork pattern is developed. The laser beam 33 irradiates the developed part. Then the part to which the laser beam 33 irradiates receives alteration from the upper face to the lower face, and the alteration part of the crystal substrate 25 has a faster etching speed and is etched from the upper and lower face without being affected with anisotropy of the crystal. Thus, the ununiformity of the external shape due to the anisotropy of the crystal is eliminated.
COPYRIGHT: (C)1992,JPO&Japio
JP27128490A 1990-10-09 1990-10-09 Etching method for crystal substrate Pending JPH04150212A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27128490A JPH04150212A (en) 1990-10-09 1990-10-09 Etching method for crystal substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27128490A JPH04150212A (en) 1990-10-09 1990-10-09 Etching method for crystal substrate

Publications (1)

Publication Number Publication Date
JPH04150212A true JPH04150212A (en) 1992-05-22

Family

ID=17497923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27128490A Pending JPH04150212A (en) 1990-10-09 1990-10-09 Etching method for crystal substrate

Country Status (1)

Country Link
JP (1) JPH04150212A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8541319B2 (en) 2010-07-26 2013-09-24 Hamamatsu Photonics K.K. Laser processing method
US8591753B2 (en) 2010-07-26 2013-11-26 Hamamatsu Photonics K.K. Laser processing method
US8673167B2 (en) 2010-07-26 2014-03-18 Hamamatsu Photonics K.K. Laser processing method
US8685269B2 (en) 2010-07-26 2014-04-01 Hamamatsu Photonics K.K. Laser processing method
US8741777B2 (en) 2010-07-26 2014-06-03 Hamamatsu Photonics K.K. Substrate processing method
US8802544B2 (en) 2010-07-26 2014-08-12 Hamamatsu Photonics K.K. Method for manufacturing chip including a functional device formed on a substrate
US8828873B2 (en) 2010-07-26 2014-09-09 Hamamatsu Photonics K.K. Method for manufacturing semiconductor device
US8828260B2 (en) 2010-07-26 2014-09-09 Hamamatsu Photonics K.K. Substrate processing method
US8841213B2 (en) 2010-07-26 2014-09-23 Hamamatsu Photonics K.K. Method for manufacturing interposer
US8945416B2 (en) 2010-07-26 2015-02-03 Hamamatsu Photonics K.K. Laser processing method
US8961806B2 (en) 2010-07-26 2015-02-24 Hamamatsu Photonics K.K. Laser processing method
US9108269B2 (en) 2010-07-26 2015-08-18 Hamamatsu Photonics K. K. Method for manufacturing light-absorbing substrate and method for manufacturing mold for making same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8541319B2 (en) 2010-07-26 2013-09-24 Hamamatsu Photonics K.K. Laser processing method
US8591753B2 (en) 2010-07-26 2013-11-26 Hamamatsu Photonics K.K. Laser processing method
US8673167B2 (en) 2010-07-26 2014-03-18 Hamamatsu Photonics K.K. Laser processing method
US8685269B2 (en) 2010-07-26 2014-04-01 Hamamatsu Photonics K.K. Laser processing method
US8741777B2 (en) 2010-07-26 2014-06-03 Hamamatsu Photonics K.K. Substrate processing method
US8802544B2 (en) 2010-07-26 2014-08-12 Hamamatsu Photonics K.K. Method for manufacturing chip including a functional device formed on a substrate
US8828873B2 (en) 2010-07-26 2014-09-09 Hamamatsu Photonics K.K. Method for manufacturing semiconductor device
US8828260B2 (en) 2010-07-26 2014-09-09 Hamamatsu Photonics K.K. Substrate processing method
US8841213B2 (en) 2010-07-26 2014-09-23 Hamamatsu Photonics K.K. Method for manufacturing interposer
US8945416B2 (en) 2010-07-26 2015-02-03 Hamamatsu Photonics K.K. Laser processing method
US8961806B2 (en) 2010-07-26 2015-02-24 Hamamatsu Photonics K.K. Laser processing method
US9108269B2 (en) 2010-07-26 2015-08-18 Hamamatsu Photonics K. K. Method for manufacturing light-absorbing substrate and method for manufacturing mold for making same

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