JPH0414226A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH0414226A
JPH0414226A JP11734390A JP11734390A JPH0414226A JP H0414226 A JPH0414226 A JP H0414226A JP 11734390 A JP11734390 A JP 11734390A JP 11734390 A JP11734390 A JP 11734390A JP H0414226 A JPH0414226 A JP H0414226A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
formed
insulating film
deposited
etching stop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11734390A
Inventor
Takashi Okada
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To make small the matching margin of wiring contact parts and to make possible an increase in the integration of an element by a method wherein contact holes are formed in a first insulating film formed on a semiconductor substrate via an etching stop film, the exposed etching stop film is removed, a second insulating film is selectively formed on the sidewalls of the contact holes and a wiring, which comes into contact to diffused layers in the substrate or electrode wirings, is formed.
CONSTITUTION: An element isolation insulating film 2 is formed on a p-type silicon substrate 1, a gate electrode 4 is formed via a gate insulating film 3 and an impurity is ion-implanted using this electrode 4 as a mask to form n-type source and drain diffused layers 5 and 6. A thin thermal oxide film 7 is formed on the surface and a polycrystalline silicon film 8 is deposited thin on an etching stop film. Then, a silicon oxide film 9 which is used as an interlayer insulating film is deposited to form contact holes 10, the exposed film 8 is etched away using the film 9 as a mask, a silicon oxide film 11 is deposited, the film 11 is etched and is left on the sidewalls only of the holes 10 and the surfaces of the layers 5 and 6 are made to expose. Lastly, a metal film is formed and is patterned to form source and drain electrode wirings 12 and 13.
COPYRIGHT: (C)1992,JPO&Japio
JP11734390A 1990-05-07 1990-05-07 Manufacture of semiconductor device Pending JPH0414226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11734390A JPH0414226A (en) 1990-05-07 1990-05-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11734390A JPH0414226A (en) 1990-05-07 1990-05-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH0414226A true true JPH0414226A (en) 1992-01-20

Family

ID=14709359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11734390A Pending JPH0414226A (en) 1990-05-07 1990-05-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH0414226A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0438853A (en) * 1990-06-04 1992-02-10 Matsushita Electric Ind Co Ltd Method of forming contact structure
US6011308A (en) * 1996-06-14 2000-01-04 Nec Corporation Semiconductor device having a barrier film formed to prevent the entry of moisture and method of manufacturing the same
EP0973194A1 (en) * 1998-07-13 2000-01-19 Nec Corporation Semiconductor device and manufacturing method thereof
US6395598B1 (en) 1998-12-08 2002-05-28 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2004282069A (en) * 2003-03-12 2004-10-07 Samsung Electronics Co Ltd Semiconductor element having photon absorption film and its manufacturing method
JP2007048837A (en) * 2005-08-08 2007-02-22 Sharp Corp Manufacturing method of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0438853A (en) * 1990-06-04 1992-02-10 Matsushita Electric Ind Co Ltd Method of forming contact structure
US6011308A (en) * 1996-06-14 2000-01-04 Nec Corporation Semiconductor device having a barrier film formed to prevent the entry of moisture and method of manufacturing the same
EP0973194A1 (en) * 1998-07-13 2000-01-19 Nec Corporation Semiconductor device and manufacturing method thereof
US6395598B1 (en) 1998-12-08 2002-05-28 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2004282069A (en) * 2003-03-12 2004-10-07 Samsung Electronics Co Ltd Semiconductor element having photon absorption film and its manufacturing method
JP2007048837A (en) * 2005-08-08 2007-02-22 Sharp Corp Manufacturing method of semiconductor device
JP4550685B2 (en) * 2005-08-08 2010-09-22 シャープ株式会社 A method of manufacturing a semiconductor device

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