JPH04134827A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH04134827A
JPH04134827A JP25512490A JP25512490A JPH04134827A JP H04134827 A JPH04134827 A JP H04134827A JP 25512490 A JP25512490 A JP 25512490A JP 25512490 A JP25512490 A JP 25512490A JP H04134827 A JPH04134827 A JP H04134827A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
wiring
groove
burying
facilitated
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25512490A
Inventor
Toshiko Ono
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To improve reliability and reduce wiring capacitance by preventing any cavity from being produced by forming a reverse tapered groove in an interlayer insulating film on a semiconductor substrate correspondingly to a wiring pattern and burying the groove with a wiring material.
CONSTITUTION: A groove corresponding to a wiring pattern is formed in an interlayer insulating film 2 deposited on a semiconductor substrate 1 with a wiring shape thereof being reversely tapered. Thereafter, wiring is formed by burying the groove with a single or a plurality of layers of a wiring material 3. With the resulting reverse taper-shape, burying of the wiring material into the groove is facilitated to restrict cavity production for improvement of reliability and reduction of wiring capacitance. Further, flattening of the top layer is facilitated.
COPYRIGHT: (C)1992,JPO&Japio
JP25512490A 1990-09-27 1990-09-27 Manufacture of semiconductor device Pending JPH04134827A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25512490A JPH04134827A (en) 1990-09-27 1990-09-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25512490A JPH04134827A (en) 1990-09-27 1990-09-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH04134827A true true JPH04134827A (en) 1992-05-08

Family

ID=17274425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25512490A Pending JPH04134827A (en) 1990-09-27 1990-09-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH04134827A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333923A (en) * 1993-05-24 1994-12-02 Nec Corp Semiconductor device and its manufacture
US7148571B1 (en) 1999-07-30 2006-12-12 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
JP2008041914A (en) * 2006-08-04 2008-02-21 Chiba Univ Organic thin film transistor and its manufacturing method
JP2009260366A (en) * 2002-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Semiconductor device, and method of manufacturing the same
JP2010245543A (en) * 2010-05-27 2010-10-28 Sony Corp Solid-state imaging element
WO2013132749A1 (en) * 2012-03-08 2013-09-12 東京エレクトロン株式会社 Semiconductor device, semiconductor device manufacturing method, and semiconductor manufacturing apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333923A (en) * 1993-05-24 1994-12-02 Nec Corp Semiconductor device and its manufacture
US7148571B1 (en) 1999-07-30 2006-12-12 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
JP2009260366A (en) * 2002-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Semiconductor device, and method of manufacturing the same
JP2008041914A (en) * 2006-08-04 2008-02-21 Chiba Univ Organic thin film transistor and its manufacturing method
JP2010245543A (en) * 2010-05-27 2010-10-28 Sony Corp Solid-state imaging element
WO2013132749A1 (en) * 2012-03-08 2013-09-12 東京エレクトロン株式会社 Semiconductor device, semiconductor device manufacturing method, and semiconductor manufacturing apparatus

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