JPH04129274A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH04129274A JPH04129274A JP2250597A JP25059790A JPH04129274A JP H04129274 A JPH04129274 A JP H04129274A JP 2250597 A JP2250597 A JP 2250597A JP 25059790 A JP25059790 A JP 25059790A JP H04129274 A JPH04129274 A JP H04129274A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- selectively
- drain
- become
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000012535 impurity Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Abstract
PURPOSE: To prevent a short channel effect by forming either a source or a drain of a MOS transistor formed on a semiconductor substrate in an epitaxially selectively grown layer, thereby increasing a channel length in the case of a miniaturization of an element.
CONSTITUTION: A silicon oxide film 2 is formed on a semiconductor substrate 1, opposite conductivity type impurity ions are selectively implanted to form a diffused layer region 3 to become a source. Then, the film 2 is selectively etched, and an epitaxially selectively grown layer 6 is formed on the part. Thereafter, after the film 2 is formed by a thermal oxidation method, a polycrystalline silicon layer 7 is deposited on the entire surface, selectively etched to form an opening for forming a diffused layer region 4 to become a drain. Subsequently, with the layer 6 as a mask the opposite conductivity type impurity ions are implanted into the layer 6 to form the region 4 to become the drain. Then, the layer 7 is selectively etched to form a gate electrode 5, and a semiconductor device having a transistor in which its channel length L is increased is composed.
COPYRIGHT: (C)1992,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2250597A JPH04129274A (en) | 1990-09-20 | 1990-09-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2250597A JPH04129274A (en) | 1990-09-20 | 1990-09-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04129274A true JPH04129274A (en) | 1992-04-30 |
Family
ID=17210250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2250597A Pending JPH04129274A (en) | 1990-09-20 | 1990-09-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04129274A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005109479A (en) * | 2003-09-29 | 2005-04-21 | Samsung Electronics Co Ltd | Transistor comprising salient drain and manufacturing method thereof |
| JP2009246205A (en) * | 2008-03-31 | 2009-10-22 | Furukawa Electric Co Ltd:The | Semiconductor device and method of manufacturing the same |
-
1990
- 1990-09-20 JP JP2250597A patent/JPH04129274A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005109479A (en) * | 2003-09-29 | 2005-04-21 | Samsung Electronics Co Ltd | Transistor comprising salient drain and manufacturing method thereof |
| JP2009246205A (en) * | 2008-03-31 | 2009-10-22 | Furukawa Electric Co Ltd:The | Semiconductor device and method of manufacturing the same |
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