JPH04127577A - Pin diode - Google Patents

Pin diode

Info

Publication number
JPH04127577A
JPH04127577A JP24916290A JP24916290A JPH04127577A JP H04127577 A JPH04127577 A JP H04127577A JP 24916290 A JP24916290 A JP 24916290A JP 24916290 A JP24916290 A JP 24916290A JP H04127577 A JPH04127577 A JP H04127577A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
silicon layer
type silicon
provided
pin diode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24916290A
Inventor
Atsushi Ninomiya
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To enhance a PIN diode in switching speed by a method wherein a deep impurity level is provided to an intrinsic or a substantially intrinsic semiconductor layer.
CONSTITUTION: An N-side electrode 6 is provided to the rear of a substantially intrinsic N--type silicon layer 2 through the intermediary of a phosphorus doped N+-type silicon layer 1, and a boron doped P+-type silicon layer 3 is provided to the front of the silicon layer 2 and connected to a P-side electrode 5 at the opening of an SiO2 film 4. A deep impurity level is provided to an N--type silicon layer by doping it with gold at a dose of 5×1016cm-3. When a pin diode of this design is compared with a conventional pin diode where a deep impurity level is not provided to an N--type silicon layer, electrons and holes are recombined together in this diode at an energy half or so as much as a band gap, so that the diode of this design can be enhanced in switching speed. Moreover, a copper doped P-type silicon layer can be used in place of an N--type silicon layer.
COPYRIGHT: (C)1992,JPO&Japio
JP24916290A 1990-09-19 1990-09-19 Pin diode Pending JPH04127577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24916290A JPH04127577A (en) 1990-09-19 1990-09-19 Pin diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24916290A JPH04127577A (en) 1990-09-19 1990-09-19 Pin diode

Publications (1)

Publication Number Publication Date
JPH04127577A true true JPH04127577A (en) 1992-04-28

Family

ID=17188829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24916290A Pending JPH04127577A (en) 1990-09-19 1990-09-19 Pin diode

Country Status (1)

Country Link
JP (1) JPH04127577A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0689251A1 (en) * 1994-06-20 1995-12-27 Semikron Elektronik Gmbh Quick power diode
US6781396B2 (en) 1995-12-01 2004-08-24 Cascade Microtech, Inc. Low-current probe card
US6995579B2 (en) 1995-12-01 2006-02-07 Cascade Microtech, Inc. Low-current probe card
US7683645B2 (en) 2006-07-06 2010-03-23 Mpi Corporation High-frequency probe card and transmission line for high-frequency probe card

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0689251A1 (en) * 1994-06-20 1995-12-27 Semikron Elektronik Gmbh Quick power diode
US6781396B2 (en) 1995-12-01 2004-08-24 Cascade Microtech, Inc. Low-current probe card
US6995579B2 (en) 1995-12-01 2006-02-07 Cascade Microtech, Inc. Low-current probe card
US7683645B2 (en) 2006-07-06 2010-03-23 Mpi Corporation High-frequency probe card and transmission line for high-frequency probe card

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