JPH04123554U - semiconductor equipment - Google Patents

Abstract

(57) [Summary] [Purpose] To improve the withstand capability and peak current value at turn-on by simultaneously applying control signals to a semiconductor device from symmetrical points that are multiples of four. [Structure] A control electrode portion is formed in a semiconductor element so that control signals can be simultaneously supplied from symmetrical points on the outer circumference of the semiconductor element.

Description

[Detailed explanation of the idea]

0001

[Industrial application field]

The present invention relates to semiconductor devices, and in particular to improvements in the electrode extraction structure of semiconductor devices. Ru.

0002

[Conventional technology]

2 and 3 show the control electrode structure of a conventional semiconductor device, and 1 shows the cathode electrode structure. Pole 2 is a gate electrode as a control electrode formed on the outer periphery of gate electrode 1. , 3 is a ring-shaped lead frame for supplying a gate signal to the gate electrode 2; 4 is the tail of the lead frame, 5 is an insulator, 6 is a spring, and 7 is a thermal buffer plate.

0003 When turning on a thyristor, which is a current-driven semiconductor switch, as shown in Figure 4. As shown in the figure, when an ON signal is input to the gate at one point, the signal is transmitted to the entire surface of the element over time. The area 8 to be energized spreads out. In other words, it takes time for the energized area to expand. Karu. Therefore, if the anode current is turned on at a steep rate of increase, the current-carrying area will decrease. When the voltage is small, the loss due to turn-on is concentrated, and the density of power loss becomes high. power loss Loss turns into heat, but when it reaches a certain temperature, thermal destruction occurs. In order to alleviate this power concentration, Center gate type thyristors with a gate formed in the center and cathode A ring gate type thyristor with a ring-shaped gate surrounding the thyristor was developed. ing.

0004 A ring gate thyristor has a case structure as shown in Figure 3, with a gate electrode 2 out of the case using lead frame 3. Lead frame 2 is The nut-shaped ring has a tail 4 for taking out the gate. In this structure, 10 ⁸ When turned on at an anode current increase rate exceeding A/sec, the lead frame Since the conduction region 8a of the cathode 1 starts from around the tail 4 of the cathode 3, the power density is high. This will cause thermal damage.

[0005] In order to alleviate this thermal damage, two gate (base) outlets are provided to It is conceivable to arrange them so that they are equidistant from each other on the diagonal.

[0006]

[Problem that the idea aims to solve]

However, as the area of the element becomes larger, or higher di/dt withstand capability and higher peak current are required, the conduction area expands from both ends of the diagonal line.For example, if the cathode radius is r, the current It is assumed that when the current reaches its peak value, only the cathodes located at a distance r from the gate outlet are turned on. In this case, the device has a peak current value of πr ²

[0007]

[Math 1]

[0008] Conductivity occurs over approximately 2/3 of the area.

[0009] Therefore, in order to increase the cathode area, we set the cathode radius to 2r and did the same as above. It is also conceivable to turn it on using the main circuit of Even in this case, the peak current When this happens, the cathode located at a distance r around the gate outlet turns on. Since it can be assumed that the conduction area will hardly change. In other words, the cathode area is quadrupled. By increasing the cathode area, the power is concentrated in an area of about 1/5 to 1/6 of that area, and the cathode area is increased. Therefore, it becomes impossible to obtain a correspondingly high anode current increase rate and peak current.

0010 This invention was devised in view of the above-mentioned problems, and its purpose is to By simultaneously applying control signals from the above symmetrical points, it is possible to An object of the present invention is to provide a semiconductor device with improved durability and peak current value.

[0011]

[Means to solve the problem]

In order to achieve the above object, the present invention provides a A lead frame and electrode terminals arranged at equal intervals in the circumferential direction on this lead frame. and a plurality of connection frames that connect two adjacent electrode terminals each. and the control electrode section by a bridging frame that bridges these connection frames. form.

0012

[Effect]

The control signal input from the control electrode reaches the outlet through the same distance, and this A turn-on region is formed almost simultaneously near the outlet. start to turn on Heat is generated due to turn-on loss, but this is dispersed and durability is improved. .

[0013]

【Example】

An embodiment of the present invention will be described below with reference to FIG.

[0014] FIG. 1 shows a semiconductor device according to an embodiment of the present invention, in which a disk-shaped cathode 1 is A ring-shaped gate, which is a control pole, is placed near the outer periphery. A ring-shaped lead frame 3 is electrically connected. to lead frame 3 are spaced equidistantly along its circumference or symmetrically with respect to the center of cathode 1. Electrode terminal pieces (9a, 9b) and (9c, 9d), which are outlet ports, are provided. Ru. The electrode terminal pieces 9a and 9c are connected by a connecting frame 10a, and the electrode terminal pieces 9a and 9c are connected by a connecting frame 10a. 9b and 9d are connected by a connecting frame 10b. In addition, the connection frame The intermediate point between the frames 10a and 10b is connected by the bridge frame 11, and the lead-off The frame 11 is provided with a tail portion 12.

[0015] That is, in the above embodiment, the lead frame has four gate outlets. And so. Symmetry is important for this outlet to reduce mutual inductance. It is desirable that the number be as large as a power of 2, such as 4, 8, or 16. Also, this It is desirable to arrange these outlets at equal intervals. In the above example, the gate is removed. Since there are four outlets, they are placed at 90° intervals. Next to these gate exits Connect similar items and connect their midpoints. Is it in the middle of that connection frame? Connect to the gate terminal through the tail of the lead frame.

[0016] Even if there are 8 gate outlets, connect the adjacent ones and connect them to this intermediate point. Connect the comrades, and then move the midpoint of that connection frame to the middle of the adjacent comrade's connection frame. Connect the points. The tail of the lead frame from the middle of its connection frame to the gate terminal Connect through. If the gate outlet is doubled, the middle of the connection frame should be Connect the will to the neighboring one one more time. In other words, the gate outlet is a power of 2. It needs to be multiplied.

[0017] If connected like this, the gate signal input from the gate terminal will pass through the same distance. Reach each gate outlet. Near this gate outlet, as shown in Figure 1, Turn-on regions 13a to 13d are formed almost simultaneously. start to turn on Heat is generated due to turn-on loss, but this is dispersed and the withstand capability is improved. In addition, if you arrange the gate outlets evenly with respect to the number of outlets, it will be even better. Tolerance is improved.

For example, an element with two gate outlets could withstand only di/dt=10 ⁸ A/sec and a peak current of 100 A, but with the frame structure shown in FIG. The turn-on capability was improved to dt=2×10 ⁸ A/sec and peak current of 200 A.

[0019]

[Effect of the idea]

The present invention is as described above. Due to the electrode structure that can supply control signals, the effective area of the element at turn-on is expanded. However, it is possible to improve the di/dt withstand capability and peak current value due to turn-on. .

[Brief explanation of drawings]

FIG. 1 is a plan view of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a plan view of a conventional semiconductor device.

FIG. 3 is a partial cross-sectional view of a conventional semiconductor device.

FIG. 4 is an explanatory diagram showing a turn-on state of a conventional semiconductor device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1... Gate electrode, 3... Lead frame, 9a-9c... Electrode terminal piece, 10a, 10b... Connection frame, 11... Bridging frame, 12... Tail part of bridging frame, 13a-13d
...Turn-on area.

Claims (1)

[Scope of utility model registration request] 1. A semiconductor device comprising a control electrode part for supplying a control signal to a semiconductor element having at least two junction regions, in which semiconductor layers having different polarities are alternately arranged, and the outer periphery of the semiconductor element. A lead frame provided along the lead frame, electrode terminal parts arranged at equal intervals in the circumferential direction on the lead frame, and a plurality of connection frames connecting two adjacent electrode terminal parts each. . A semiconductor device, wherein the control electrode portion is formed by a bridging frame that bridges these connection frames.