JPH0412270A - Silicon hydride detector - Google Patents
Silicon hydride detectorInfo
- Publication number
- JPH0412270A JPH0412270A JP11658090A JP11658090A JPH0412270A JP H0412270 A JPH0412270 A JP H0412270A JP 11658090 A JP11658090 A JP 11658090A JP 11658090 A JP11658090 A JP 11658090A JP H0412270 A JPH0412270 A JP H0412270A
- Authority
- JP
- Japan
- Prior art keywords
- silicon hydride
- gaseous sample
- reaction
- sample gas
- catalyst
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052990 silicon hydride Inorganic materials 0.000 title claims abstract description 34
- 239000007789 gas Substances 0.000 claims abstract description 37
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 28
- 239000001257 hydrogen Substances 0.000 claims abstract description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000001514 detection method Methods 0.000 claims abstract description 19
- 239000003054 catalyst Substances 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 159000000011 group IA salts Chemical class 0.000 claims abstract description 8
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 23
- 230000035945 sensitivity Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical class [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 (産業上の利用分野〕 本発明は、水素化ケイ素検出装置に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a silicon hydride detection device.
モノシラン(SiHn)やジシラン(SizH6)など
の水素化ケイ素の検出方法として、定電位電解法、ガル
バニ電池法、化学発光法、金属酸化物半導体法、IR法
、UV法などが知られている。Known methods for detecting silicon hydrides such as monosilane (SiHn) and disilane (SizH6) include constant potential electrolysis, galvanic cell method, chemiluminescence method, metal oxide semiconductor method, IR method, and UV method.
しかしながら、上記検出方法のうち、定電位電解法、ガ
ルバニ電池法、化学発光法、金属酸化物半導体法におい
ては、水素化ケイ素の分解生成物である二酸化ケイ素(
S i O□)が検出部に付着したり、電解液にS i
Ozが溶解するなどして、初期の検出性能が維持でき
なくなるといった欠点があり、また、化学発光法、IR
法、UV法においては、5iO7の薄膜が光学系に付着
して短期間で使用が不能になるといった問題点があるな
ど、メンテナンスがかなり面倒であり、水素化ケイ素を
長期間にわたって安定に検出することができなかった。However, among the above detection methods, in the constant potential electrolysis method, galvanic cell method, chemiluminescence method, and metal oxide semiconductor method, silicon dioxide (
S i O □) may adhere to the detection part, or S i O
There is a drawback that initial detection performance cannot be maintained due to dissolution of Oz, and chemiluminescence method, IR
In the method and UV method, maintenance is quite troublesome, such as a thin film of 5iO7 adhering to the optical system and making it unusable in a short period of time, and silicon hydride cannot be detected stably over a long period of time. I couldn't.
そこで、上述の問題点を解決するものとして、特開昭6
1−117452号公報に示されるように、水素化ケイ
素を加熱した触媒層を通過させて水素化ケイ素を分解し
、そのとき生ずる水素(H2)を検出することが提案さ
れている。Therefore, as a solution to the above-mentioned problems,
As shown in Japanese Patent No. 1-117452, it has been proposed to decompose silicon hydride by passing it through a heated catalyst layer and to detect hydrogen (H2) produced at the time.
しかしながら、この検出方法においては、例えば5iH
sを検出する場合、触媒を用いて、S i H,+O,
→SiO□+2H2なる反応によってS r Haのみ
を分解しているため、1 ppmのSiH4から21
)pnlのH2シか発生せず、従って、検出感度が低い
といった欠点があると共に、触媒を加熱しなければなら
ず、装置の構成がそれだけ複雑になるといった欠点があ
る。However, in this detection method, for example, 5iH
When detecting s, a catalyst is used to detect S i H, +O,
→Since only S r Ha is decomposed by the reaction SiO□+2H2, 21
) pnl H2 is generated, so there are drawbacks such as low detection sensitivity and the drawback that the catalyst has to be heated, making the device configuration that much more complicated.
本発明は、上述の事柄に留意してなされたもので、その
目的とするところは、構成が簡単で、しかも、水素化ケ
イ素を長期間にわたって安定かつ感度よく検出すること
ができる水素化ケイ素検出装置を提供することにある。The present invention has been made with the above-mentioned considerations in mind, and an object of the present invention is to detect silicon hydride that has a simple configuration and is capable of detecting silicon hydride stably and sensitively over a long period of time. The goal is to provide equipment.
〔課題を解決するための手段]
上述の目的を達成するため、本発明に係る水素化ケイ素
検出装置は、水素化ケイ素を含む試料ガスを必要により
加湿した後、アルカリ性塩からなる触媒のもとで水素化
ケイ素と水とを常温反応させ、そのとき生ずる水素を検
出するようにした点に特徴がある。[Means for Solving the Problem] In order to achieve the above-mentioned object, the silicon hydride detection device according to the present invention humidifies a sample gas containing silicon hydride as necessary, and then humidifies it under a catalyst made of an alkaline salt. The unique feature is that silicon hydride and water are reacted at room temperature, and the hydrogen produced at that time is detected.
(作用〕
上記特徴的構成よりなる本発明の水素化ケイ素検出装置
においては、試料ガスに含まれる水素化ケイ素はアルカ
リ性塩からなる触媒のもとで水と常温反応する。試料ガ
スに例えばS i Hsが含まれている場合、
SiH4+2H20→5iOr−1−4Hzなる反応が
常温で行われ、1 ppmのSiH,から4 ppm
OH2が発生ずるため、H2を感度よく検出することが
できる。また、触媒を加熱する必要がないから、装置の
構成が簡単になる。(Function) In the silicon hydride detection device of the present invention having the above characteristic configuration, silicon hydride contained in the sample gas reacts with water at room temperature under a catalyst made of an alkaline salt. When Hs is included, the reaction SiH4+2H20→5iOr-1-4Hz is carried out at room temperature, and from 1 ppm SiH to 4 ppm
Since OH2 is generated, H2 can be detected with high sensitivity. Furthermore, since there is no need to heat the catalyst, the configuration of the device becomes simpler.
〔実施例]
以下、本発明の一実施例を図面を参照しながら説明する
。[Example] Hereinafter, an example of the present invention will be described with reference to the drawings.
第1図は本発明に係る水素化ケイ素検出装置の一例を示
すブロック図で、この図において、1は試料ガス入口で
、図外のガスラインに接続されている。2は一定量の試
料ガスを吸引する吸引ポンプ、3は吸引ポンプ2によっ
て吸引された試料ガスの相対湿度(RH)を40%以上
になるように加湿する加湿槽である。この加湿槽3は例
えばPVC(ポリ塩化ビニル)からなる容器4内に純水
5を入れ、吸引ポンプ2に連なる配管6に適宜の内径の
水分拡散用のシリコンチューブ7を接続し、このシリコ
ンチューブ7を純水5中に浸漬してなるもので、この加
湿槽3における加湿操作は、後述する反応槽10におい
て水素化ケイ素と水(H,O)とを反応させるためと、
後述する水素検出器16における検出感度を一定にさせ
るために行われる。なお、試料ガスのRHが常に40%
以上であるときは加湿槽3を省略してもよい。FIG. 1 is a block diagram showing an example of a silicon hydride detection device according to the present invention. In this figure, 1 is a sample gas inlet, which is connected to a gas line not shown. 2 is a suction pump that sucks a certain amount of sample gas, and 3 is a humidification tank that humidifies the sample gas sucked by suction pump 2 so that the relative humidity (RH) thereof becomes 40% or more. This humidifying tank 3 is constructed by placing pure water 5 in a container 4 made of PVC (polyvinyl chloride), for example, and connecting a silicon tube 7 with an appropriate inner diameter for moisture diffusion to a piping 6 connected to the suction pump 2. 7 is immersed in pure water 5, and the humidification operation in this humidifying tank 3 is to cause silicon hydride and water (H, O) to react in a reaction tank 10, which will be described later.
This is done in order to keep the detection sensitivity of the hydrogen detector 16, which will be described later, constant. Note that the RH of the sample gas is always 40%.
If this is the case, the humidifying tank 3 may be omitted.
8は例えば三方電磁弁からなる切換え弁で、その上流側
は配管9を介して加湿槽3に接続され、下流側には反応
槽10を有するAライン11と、前記反応槽10をバイ
パスするBライン12とが接続されている。そして、切
換え弁8は図外の制御装置からの制御信号によって一定
時間毎に切換えられて、Aライン11およびBライン1
2に交互に試料ガスが流れるようにしである。また、反
応槽10は耐腐食性の筒13内に、例えば多孔性アルミ
ナを炭酸ナトリウム飽和液に漬けた後、150°Cで乾
燥固化したアルカリ性塩からなる触媒14を充填し、筒
13の両端をフィルタ15で封止してなるもので、試料
ガスに例えばS i H4が含まれている場合、S i
H4+2HzO→5i02+4H2なる反応が常温で
行われようにしである。Reference numeral 8 denotes a switching valve consisting of, for example, a three-way electromagnetic valve, the upstream side of which is connected to the humidifying tank 3 via piping 9, and the downstream side connected to an A line 11 having a reaction tank 10 and a B line that bypasses the reaction tank 10. Line 12 is connected. The switching valve 8 is switched at regular intervals by a control signal from a control device (not shown), so that the A line 11 and the B line 1
The sample gas is made to flow alternately between the two. The reaction tank 10 is constructed by filling a corrosion-resistant cylinder 13 with a catalyst 14 made of, for example, an alkaline salt obtained by soaking porous alumina in a saturated sodium carbonate solution and then drying and solidifying it at 150°C. is sealed with a filter 15, and if the sample gas contains, for example, S i H4,
The reaction H4+2HzO→5i02+4H2 is supposed to take place at room temperature.
16は前記両ラインIL 12の合流点17より下流側
に設けられる例えばSnO□を主成分とする水素検出器
で、H2の検出およびその濃度を測定することができる
。18は試料ガス出口である。Reference numeral 16 denotes a hydrogen detector whose main component is, for example, SnO□, which is provided downstream of the confluence 17 of both lines IL 12, and is capable of detecting H2 and measuring its concentration. 18 is a sample gas outlet.
なお、上記のように、加湿槽3の下流側に反応槽10を
存するAライン11と、反応槽10をバイパスするBラ
イン12とを設けた理由は次の通りである。In addition, as mentioned above, the reason why the A line 11 in which the reaction tank 10 exists on the downstream side of the humidification tank 3 and the B line 12 which bypasses the reaction tank 10 are provided is as follows.
すなわち、試料ガス人口1を介して取り込まれる試料ガ
スに、水素化ケイ素の他にH2を含んでいることがある
が、このような場合、反応槽10を経た試料ガスを水素
検出器16に導入したときの検出器出力と、反応槽10
を経ない試料ガスを水素検出器16に導入したときの検
出器出力とを比較することにより、水素検出器16が水
素化ケイ素とH2の何れに応答しているかを判別できる
ようにするためである。That is, the sample gas taken in through the sample gas population 1 may contain H2 in addition to silicon hydride; in such cases, the sample gas that has passed through the reaction tank 10 is introduced into the hydrogen detector 16. Detector output and reaction tank 10 when
This is so that it can be determined whether the hydrogen detector 16 is responding to silicon hydride or H2 by comparing the detector output when a sample gas that has not passed through the hydrogen detector 16 is introduced into the hydrogen detector 16. be.
第2図は上記水素化ケイ素検出装置の電気的構成の一例
を示すブロック図で、この図において、19は水素検出
器16からの出力を増幅するアンプ、20は切換え弁8
を操作して試料ガスをAライン11を経て水素検出器1
6に導入し、そのとき水素検出器16から出力される信
号をボールドするホールドアンプ、21は切換え弁8を
操作して試料ガスをBライン12を経て水素検出器16
に導入し、そのとき水素検出器16から出力される信号
をホールドするホールドアンプである。22は水素検出
器16で測定されたH2濃度に基づいて水素化ケイ素の
濃度を表示する濃度表示器、23はホールドアンプ20
.21の出力の差をとる差動アンプ、24は比較器であ
る。FIG. 2 is a block diagram showing an example of the electrical configuration of the silicon hydride detection device. In this figure, 19 is an amplifier that amplifies the output from the hydrogen detector 16, and 20 is a switching valve 8.
The sample gas is passed through the A line 11 to the hydrogen detector 1.
6 and a hold amplifier that bolds the signal output from the hydrogen detector 16 at that time, and 21 operates the switching valve 8 to pass the sample gas through the B line 12 to the hydrogen detector 16.
This is a hold amplifier that holds the signal output from the hydrogen detector 16 at that time. 22 is a concentration indicator that displays the concentration of silicon hydride based on the H2 concentration measured by the hydrogen detector 16; 23 is a hold amplifier 20;
.. A differential amplifier takes the difference between the outputs of 21, and 24 is a comparator.
25、26はガス種表示器で、試料ガスにH,が含まれ
ているときは表示器25が点灯し、そして、試料ガスに
水素化ケイ素が含まれているときは表示器26が点灯し
、また、H2および水素化ケイ素が含まれているときは
画表示器25.26が点灯する。25 and 26 are gas type indicators; when the sample gas contains H, the indicator 25 lights up, and when the sample gas contains silicon hydride, the indicator 26 lights up. , and when H2 and silicon hydride are included, the screen displays 25 and 26 light up.
而して、上記構成の水素化ケイ素検出装置の動作につい
て、第3図に示すタイムチャートをも参照しながら説明
する。The operation of the silicon hydride detection apparatus having the above structure will now be described with reference to the time chart shown in FIG.
吸引ポンプ2を運転することにより試料ガスが試料ガス
人口1を介して加湿槽3に導入されて、水分拡散用のシ
リコンチューブ7を通過することにより試料ガスはRH
40%以上に加湿される。加湿された試料ガスは切換え
弁8に送られて、この切換え弁8の切換え操作によって
試料ガスは一定時間毎にAライン11とBライン12と
に間欠的に流れるようになる。By operating the suction pump 2, the sample gas is introduced into the humidifying tank 3 via the sample gas population 1, and by passing through the silicon tube 7 for moisture diffusion, the sample gas is adjusted to RH.
It is humidified to over 40%. The humidified sample gas is sent to the switching valve 8, and by switching the switching valve 8, the sample gas is caused to flow intermittently into the A line 11 and the B line 12 at regular intervals.
■試料ガスに5iHaのみ含まれるときは、先ず、Aラ
イン11に試料ガスが流れるとき、反応槽10において
は、触媒14のもとで
S i Hi+2H20→Si○2+4H2・・・・・
・(1)なる常温反応が行われ、SiH,の4倍のH2
が発生ずる。次に、切換え弁8の切換え操作によって試
料ガスがBライン12を流れるときは、SiH<とH2
0とは反応しない。従って、水素検出器16におけるH
2濃度は、第3図(A)に示すように変化する。この図
において、A、Bは試料ガスがそれぞれAライン11.
Bライン12を流れているときを示す。■When the sample gas contains only 5iHa, first, when the sample gas flows through the A line 11, in the reaction tank 10, under the catalyst 14, S i Hi + 2H 20 → Si○ 2 + 4H 2...
・(1) The reaction at room temperature is carried out, and H2 is 4 times that of SiH.
occurs. Next, when the sample gas flows through the B line 12 by switching the switching valve 8, SiH< and H2
It does not react with 0. Therefore, H in the hydrogen detector 16
2 concentration changes as shown in FIG. 3(A). In this figure, the sample gases A and B are respectively A line 11.
It shows when it is flowing on the B line 12.
そして、■試料ガスにH2のみ含まれているときは、切
換え弁8の切換え操作によって試料ガスがAライン11
を流れても、反応槽10において上記(1)式で表され
る反応が起きることがないから、水素検出器16におけ
るH2濃度は、第3図(B)に示すように変化する。When the sample gas contains only H2, the sample gas is transferred to the A line 11 by switching the switching valve 8.
Since the reaction represented by the above equation (1) does not occur in the reaction tank 10 even if H2 flows, the H2 concentration in the hydrogen detector 16 changes as shown in FIG. 3(B).
また、■試料ガスに5iHaとH2とが含まれていると
きは、水素検出器16におけるH21度は、第3図(C
)に示すように変化する。In addition, ■When the sample gas contains 5iHa and H2, the H21 degree in the hydrogen detector 16 is as shown in Fig. 3 (C
).
上記構成の水素化ケイ素検出装置においては、試料ガス
に含まれるS i H4を検出し、その濃度を測定する
ことができる。また、特に、反応槽10を経た試料ガス
を水素検出器16に導入したときの検出器出力と、反応
槽10を経ない試料ガスを水素検出器16に導入したと
きの検出器出力とを比較することができるので、水素検
出器16が水素化ケイ素とH2の何れに応答しているか
を判別することができる。In the silicon hydride detection device having the above configuration, it is possible to detect S i H4 contained in the sample gas and measure its concentration. In particular, the detector output when the sample gas that has passed through the reaction tank 10 is introduced into the hydrogen detector 16 is compared with the detector output when the sample gas that has not passed through the reaction tank 10 is introduced into the hydrogen detector 16. Therefore, it is possible to determine whether the hydrogen detector 16 is responding to silicon hydride or H2.
なお、本発明は上記実施例に限られるものではなく、例
えばシボシランやフォスフインなど他の水素化物を検出
することもできる。また、反応槽10内に設けられる触
媒14は炭酸ナトリウム以外の炭酸カルシウムや水酸化
カルシウムなど他のアルカリ性塩を用いてもよい。It should be noted that the present invention is not limited to the above-described embodiments, and other hydrides such as sibosilane and phosphine can also be detected. Further, the catalyst 14 provided in the reaction tank 10 may be made of other alkaline salts than sodium carbonate, such as calcium carbonate and calcium hydroxide.
以上説明したように、本発明においては、水素化ケイ素
を含む試料ガスを必要により加湿した後、アルカリ性塩
からなる触媒のもとで水素化ケイ素と水とを常温反応さ
せ、そのとき生ずる水素を検出するようにしているので
、次のような効果を奏する。As explained above, in the present invention, after humidifying a sample gas containing silicon hydride as necessary, silicon hydride and water are reacted at room temperature under a catalyst made of an alkaline salt, and the hydrogen produced at that time is Since the detection is performed, the following effects are achieved.
■ 水素化ケイ素とH,Oとを反応させているため、H
2が多量に発生し、それだけ、感度よく検出することが
できる。■ Because silicon hydride is reacted with H and O, H
2 is generated in large quantities, and the more sensitive it can be detected.
■ 加熱触媒を用いてないから、装置全体の構成が簡単
になり、万一水素化ケイ素が多量に流入しても着火する
ことはない。■ Since no heated catalyst is used, the overall structure of the device is simple, and even if a large amount of silicon hydride flows in, it will not ignite.
■ H2による干渉影響を防止できる。■ Interference effects due to H2 can be prevented.
■ 長期的に安定した検出が行なえる。■ Stable detection can be performed over a long period of time.
第1図〜第3図は本発明の一実施例を示し、第1図は本
発明に係る水素化ケイ素検出装置の−例を示すブロック
図、第2図はその電気的構成を示すブロック図、第3図
(AL (B)、 (C)は水素検出器の出力を示すタ
イムチャートである。
3・・・加湿槽、8・・・切換え弁、10・・・反応槽
、14・触媒、16・・・水素検出器。1 to 3 show an embodiment of the present invention, FIG. 1 is a block diagram showing an example of a silicon hydride detection device according to the present invention, and FIG. 2 is a block diagram showing its electrical configuration. , Figure 3 (AL) (B) and (C) are time charts showing the output of the hydrogen detector. 3... Humidification tank, 8... Switching valve, 10... Reaction tank, 14. Catalyst. , 16... hydrogen detector.
Claims (1)
アルカリ性塩からなる触媒のもとで水素化ケイ素と水と
を常温反応させ、そのとき生ずる水素を検出するように
したことを特徴とする水素化ケイ素検出装置。After humidifying the sample gas containing silicon hydride as necessary,
A silicon hydride detection device characterized in that silicon hydride and water are reacted at room temperature under a catalyst made of an alkaline salt, and the hydrogen produced at the time is detected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11658090A JPH0682121B2 (en) | 1990-05-01 | 1990-05-01 | Silicon hydride detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11658090A JPH0682121B2 (en) | 1990-05-01 | 1990-05-01 | Silicon hydride detector |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0412270A true JPH0412270A (en) | 1992-01-16 |
JPH0682121B2 JPH0682121B2 (en) | 1994-10-19 |
Family
ID=14690645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11658090A Expired - Fee Related JPH0682121B2 (en) | 1990-05-01 | 1990-05-01 | Silicon hydride detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0682121B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5427548A (en) * | 1992-10-02 | 1995-06-27 | Yazaki Corporation | Terminal fitting insertion guide structure for connector |
US5441427A (en) * | 1993-03-08 | 1995-08-15 | Yazaki Corporation | Connector housing |
US5484223A (en) * | 1993-01-22 | 1996-01-16 | Yazaki Corporation | Double terminal stop connector |
US5820417A (en) * | 1993-03-08 | 1998-10-13 | Yazaki Corporation | Connector housing |
JP2007227249A (en) * | 2006-02-24 | 2007-09-06 | Yazaki Corp | Connector |
JP2012163540A (en) * | 2011-02-09 | 2012-08-30 | Taiyo Nippon Sanso Corp | Gas measuring apparatus and measuring method of hydride gas |
-
1990
- 1990-05-01 JP JP11658090A patent/JPH0682121B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5427548A (en) * | 1992-10-02 | 1995-06-27 | Yazaki Corporation | Terminal fitting insertion guide structure for connector |
US5484223A (en) * | 1993-01-22 | 1996-01-16 | Yazaki Corporation | Double terminal stop connector |
US5441427A (en) * | 1993-03-08 | 1995-08-15 | Yazaki Corporation | Connector housing |
US5820417A (en) * | 1993-03-08 | 1998-10-13 | Yazaki Corporation | Connector housing |
JP2007227249A (en) * | 2006-02-24 | 2007-09-06 | Yazaki Corp | Connector |
JP2012163540A (en) * | 2011-02-09 | 2012-08-30 | Taiyo Nippon Sanso Corp | Gas measuring apparatus and measuring method of hydride gas |
Also Published As
Publication number | Publication date |
---|---|
JPH0682121B2 (en) | 1994-10-19 |
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