JPH04111418A - Crystal growth and crystal growth apparatus - Google Patents

Crystal growth and crystal growth apparatus

Info

Publication number
JPH04111418A
JPH04111418A JP23141290A JP23141290A JPH04111418A JP H04111418 A JPH04111418 A JP H04111418A JP 23141290 A JP23141290 A JP 23141290A JP 23141290 A JP23141290 A JP 23141290A JP H04111418 A JPH04111418 A JP H04111418A
Authority
JP
Japan
Prior art keywords
introduction piping
formation
divergent
crystal growth
formation substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23141290A
Inventor
Masanori Shinohara
Haruki Yokoyama
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegr & Teleph Corp <Ntt> filed Critical Nippon Telegr & Teleph Corp <Ntt>
Priority to JP23141290A priority Critical patent/JPH04111418A/en
Publication of JPH04111418A publication Critical patent/JPH04111418A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To enable easy atomic layer control and to reduce a supply amount which is necessary for crystal growth by supplying a specific metallic atom on a formation substrate and by supplying molecule having self-formation stopping mechanism on the formation substrate.
CONSTITUTION: Group III or II metal is supplied onto a formation substrate at a base of one layer or less. Molecule having self-formation stopping mechanism containing group III or II element is supplied. Monoatomic layer formation of group III or II element is thereby finished. A reaction container 10 for containing a formation substrate 9 of the device is provided with a first introduction piping for introducing a first raw material to a reaction pipe 10 and a second introduction piping for introducing a second raw material to a reaction pipe. The second introduction piping is made to diverge into a first divergent introduction piping and a second divergent introduction piping. The first divergent introduction piping is introduced to the reaction container as is and the second divergent introduction piping is introduced to a reaction container through a heating device 4 for thermal decomposition of organic metal raw gas.
COPYRIGHT: (C)1992,JPO&Japio
JP23141290A 1990-08-31 1990-08-31 Crystal growth and crystal growth apparatus Pending JPH04111418A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23141290A JPH04111418A (en) 1990-08-31 1990-08-31 Crystal growth and crystal growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23141290A JPH04111418A (en) 1990-08-31 1990-08-31 Crystal growth and crystal growth apparatus

Publications (1)

Publication Number Publication Date
JPH04111418A true JPH04111418A (en) 1992-04-13

Family

ID=16923192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23141290A Pending JPH04111418A (en) 1990-08-31 1990-08-31 Crystal growth and crystal growth apparatus

Country Status (1)

Country Link
JP (1) JPH04111418A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833161B2 (en) * 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7732325B2 (en) 2002-01-26 2010-06-08 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US7781326B2 (en) 2001-02-02 2010-08-24 Applied Materials, Inc. Formation of a tantalum-nitride layer
US10280509B2 (en) 2001-07-16 2019-05-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781326B2 (en) 2001-02-02 2010-08-24 Applied Materials, Inc. Formation of a tantalum-nitride layer
US10280509B2 (en) 2001-07-16 2019-05-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7732325B2 (en) 2002-01-26 2010-06-08 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US6833161B2 (en) * 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode

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