JPH04108655A - Porcelain composition - Google Patents
Porcelain compositionInfo
- Publication number
- JPH04108655A JPH04108655A JP2224419A JP22441990A JPH04108655A JP H04108655 A JPH04108655 A JP H04108655A JP 2224419 A JP2224419 A JP 2224419A JP 22441990 A JP22441990 A JP 22441990A JP H04108655 A JPH04108655 A JP H04108655A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- lead
- compsn
- dielectric constant
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims description 34
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 7
- 229910001422 barium ion Inorganic materials 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims abstract description 5
- 229910001427 strontium ion Inorganic materials 0.000 claims abstract description 5
- FKSZLDCMQZJMFN-UHFFFAOYSA-N [Mg].[Pb] Chemical compound [Mg].[Pb] FKSZLDCMQZJMFN-UHFFFAOYSA-N 0.000 claims abstract description 4
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims abstract description 4
- HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 claims abstract description 3
- PWYYWQHXAPXYMF-UHFFFAOYSA-N strontium(2+) Chemical compound [Sr+2] PWYYWQHXAPXYMF-UHFFFAOYSA-N 0.000 claims description 4
- 238000006467 substitution reaction Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 abstract description 16
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- 239000000395 magnesium oxide Substances 0.000 description 10
- 239000003985 ceramic capacitor Substances 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- XDFCIPNJCBUZJN-UHFFFAOYSA-N barium(2+) Chemical compound [Ba+2] XDFCIPNJCBUZJN-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 2
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910000018 strontium carbonate Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は磁器組成物に関し、特に誘電率、絶縁抵抗が高
く、誘電損失が小さく、かつ1050 ’C以下の温度
で焼結可能な磁器組成物に関するものである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a porcelain composition, particularly a porcelain composition that has high dielectric constant, high insulation resistance, low dielectric loss, and can be sintered at a temperature of 1050'C or less. It is about things.
[従来の技術]
従来、高誘電率系磁器組成物として、チタン酸バリウム
[BaTj03]系がよく知られており、チタン酸カル
シウム[CaT i 03 ] 、チタン酸鉛[PbT
iO3]などを添加、置換することにより、温度特性の
改善を図っているが、焼結温度が1300℃以上の高温
であるため積層セラミックコンデンサに使用した場合、
内部電極には白金。[Prior Art] Conventionally, barium titanate [BaTj03] system is well known as a high dielectric constant ceramic composition, calcium titanate [CaT i 03 ], lead titanate [PbT
Although the temperature characteristics are improved by adding or substituting substances such as iO3, the sintering temperature is as high as 1300°C or higher, so when used in multilayer ceramic capacitors,
Platinum for internal electrodes.
パラジウム等の高価な貴金属しか利用できなかった。Only expensive precious metals such as palladium could be used.
[発明が解決しようとする課題]
従来の材料で温度変化率の小さい材料を実現した場合、
得られる誘電率はせいぜい2000程度にすぎず、コン
デンサ用の材料としては小さすぎる。[Problem to be solved by the invention] When a material with a small temperature change rate is realized using conventional materials,
The dielectric constant obtained is only about 2000 at most, which is too small to be used as a material for capacitors.
近年、低温で焼結し、かつ誘電率が高い材料として鉛系
複合ペロブスカイト化合物が報告されている。その中で
、特開昭58−161972号公報において、マグネシ
ウム・タングステン酸鉛[Pb(MC11/2 W1/
2 > 03コ、チタン酸鉛[PbTiO3]およびニ
ッケル・ニオブ酸鉛[Pb(N i 1/3 N b2
/3 ) 03 ]からなる3成分組成物は、誘電率を
10000以上と高くすることが可能であることが報告
されている。しかしこの3成分系では誘電率の温度変化
が比較的大きいという問題点がある。In recent years, lead-based composite perovskite compounds have been reported as materials that sinter at low temperatures and have a high dielectric constant. Among them, in JP-A-58-161972, magnesium lead tungstate [Pb (MC11/2 W1/
2 > 03, lead titanate [PbTiO3] and nickel lead niobate [Pb(N i 1/3 N b2
It has been reported that a three-component composition consisting of 03] can have a dielectric constant as high as 10,000 or more. However, this three-component system has a problem in that the change in dielectric constant with temperature is relatively large.
さらに鉛系複合ペロブスカイト化合物を用いた誘電体材
料は酸化鉛の蒸気圧が高いため焼成雰囲気に大きく影響
を受けるという問題点がある。そのため、積層セラミッ
クコンデンサの焼成においても焼成雰囲気を制御しなけ
れば安定した特性が得られない。Furthermore, dielectric materials using lead-based composite perovskite compounds have the problem of being greatly affected by the firing atmosphere due to the high vapor pressure of lead oxide. Therefore, stable characteristics cannot be obtained when firing a multilayer ceramic capacitor unless the firing atmosphere is controlled.
本発明の目的は、上記の組成物の誘電率の温度特性を改
善し、かつ焼成雰囲気に対する安定性が高い磁器組成物
を提供することにある。An object of the present invention is to provide a ceramic composition that improves the temperature characteristics of the dielectric constant of the above-mentioned composition and has high stability in a firing atmosphere.
[課題を解決するための手段]
本発明は、マグネシウム・タングステン酸鉛[Pb (
MC11/2 W1/2 ) 03 ] 、チタンW1
鉛[PbT i 03 ] ;13よびニッケル・ニオ
ブ!l鉛[Pb (N i 1/3 Nb2/3 >
03 ]からなる3成分組成物を[P b (Mg1/
2 W172 ) 03 ] x[PbTiO3コ、
[Pb (N i 1/3 Nb 273 )03
] (ただしx+y+z=1.0 > と表現シタと
き、以下の組成点、
(x= 0.893. y= Q、297. z= 0
.01 >−a(x= 0.495. y= 0.49
5. z= 0.01戸−b(x= 0.195. y
= 0.455. z= 0.35 )−c(x= 0
.10 、 y= 0.40 、 z= 0.50 >
−d(x= 0.06 、 y= 0.24 、 z=
0.70 ) ・eを結ぶ線上、およびこの5点に囲
まれる組成範囲内にある主成分組成物において、鉛イオ
ン(Pb2+)をバリウムイオン(Ba2+)、ストロ
ンチウムイオン(Sr”)のうち少なくとも1種類のイ
オンで0.5〜30mo 1%置換したことを特徴とす
る磁器組成物である。[Means for Solving the Problems] The present invention provides magnesium lead tungstate [Pb (
MC11/2 W1/2) 03], Titanium W1
Lead [PbT i 03 ]; 13 and nickel/niobium! l Lead [Pb (N i 1/3 Nb2/3 >
[P b (Mg1/
2 W172 ) 03 ] x [PbTiO3,
[Pb (N i 1/3 Nb 273 )03
] (However, when expressed as x + y + z = 1.0 >, the following composition point, (x = 0.893. y = Q, 297. z = 0
.. 01>-a(x=0.495.y=0.49
5. z = 0.01 house - b (x = 0.195. y
= 0.455. z=0.35)-c(x=0
.. 10, y=0.40, z=0.50>
−d(x=0.06, y=0.24, z=
0.70) ・In the main component composition on the line connecting e and within the composition range surrounded by these five points, lead ion (Pb2+) is replaced by at least one of barium ion (Ba2+) and strontium ion (Sr''). This is a ceramic composition characterized by 0.5 to 30 mo of 1% substitution with different types of ions.
本発明における主成分組成範囲を表す3成分組成図は第
1図で示される。図中、(a)〜(e)は各組成点を表
し、本発明に含まれる組成範囲は図の斜線で示す範囲、
およびその境界線上である。A three-component composition diagram showing the main component composition range in the present invention is shown in FIG. In the figure, (a) to (e) represent each composition point, and the composition range included in the present invention is the shaded range in the figure,
And borderline.
[実施例] 以下、本発明の実施例について詳細に説明する。[Example] Examples of the present invention will be described in detail below.
実施例1〜20.比較例1〜10
出発原料として酸化鉛(PbO) 、酸化タングステン
(WO3)、酸化マグネシウム(MgO)、酸化ニオブ
(Nb205 ) 、酸化ニッケル(NiO)、酸化チ
タン(Ti02)、炭酸ストロンチウム(SrCO3)
および炭酸バリウム<BaCO3)を使用し、第1表に
示した配合比となるように各々秤量した。Examples 1-20. Comparative Examples 1 to 10 Lead oxide (PbO), tungsten oxide (WO3), magnesium oxide (MgO), niobium oxide (Nb205), nickel oxide (NiO), titanium oxide (Ti02), strontium carbonate (SrCO3) as starting materials
and barium carbonate (<BaCO3) were used, and each was weighed so as to have the compounding ratio shown in Table 1.
次に秤量した各材料をボールミル中で湿式混合したのち
、800〜850℃で仮焼を行い、この粉末をボールミ
ルで粉砕し、濾過、乾燥後、有機バインダを入れて整粒
後プレスし、直径約161!1I11、厚ざ約2mの円
板2枚と、直径約16!II!!I、厚さ約10IM4
の円柱を作製した。Next, the weighed materials were wet-mixed in a ball mill, then calcined at 800-850°C, and this powder was ground in a ball mill, filtered, and dried. After adding an organic binder and sizing, the powder was pressed. Approximately 161!1I11, two disks approximately 2m thick and approximately 16 in diameter! II! ! I, thickness approximately 10IM4
A cylinder was made.
次に本発明の組成範囲の試料については950〜105
0℃の温度で1時間焼成を行った。焼成した円板の上下
面に600℃で銀電極を焼付け、デジタルLCRメータ
で周波数1 kHz、電圧1Vr、tS、室温で容量
と誘電損失を測定し、誘電率および温度に対する誘電率
の変化率を求めた。Next, for samples in the composition range of the present invention, 950 to 105
Firing was performed at a temperature of 0° C. for 1 hour. Silver electrodes were baked on the top and bottom surfaces of the fired disk at 600°C, and the capacitance and dielectric loss were measured using a digital LCR meter at a frequency of 1 kHz, a voltage of 1 Vr, tS, and room temperature, and the dielectric constant and the rate of change of the dielectric constant with respect to temperature were determined. I asked for it.
このようにして得られた磁器の主成分[Pb(Mg1/
2 W172 ) Oa ] [PbT i Oa
]。The main component of the porcelain thus obtained [Pb(Mg1/
2 W172 ) Oa ] [PbT i Oa
].
×
[Pb (N i 173 N b2/3 ) 03
] 2の配合比X。× [Pb (N i 173 N b2/3 ) 03
] Mixing ratio X of 2.
y、zおよびSr”、Ba2+(7)置換量と、室温に
おける誘電率(ε)、誘電損失(tanδ)および−3
0℃、85℃における誘電率の変化率(20℃における
誘電率を基準)を第1表に示す。y, z and Sr'', Ba2+ (7) substitution amount, dielectric constant (ε), dielectric loss (tan δ) and -3 at room temperature.
Table 1 shows the rate of change in dielectric constant at 0°C and 85°C (based on the dielectric constant at 20°C).
第1表からも明らかなように、[Pb
(Mg1/2W1/2)03] [PbTiO3]−
[Pb (N i1/3 Nb2/3 >03] 3成
分系組成物において、Pb をSr2+、Ba2節う
ち少な2+
くとも1種類のイオンで0.5〜30mo 1%置換し
た本発明の磁器組成物は、高い誘電率を保持し、かつ誘
電率の温度による変化が小さく、EIA規格のY5T特
性を満足することが可能である。さらに本発明の磁器組
成物は1050°C以下の低い温度で焼結できるため、
積層セラミックコンデンサの内部電極に安価な銀・パラ
ジウム合金を用いることができる。As is clear from Table 1, [Pb (Mg1/2W1/2)03] [PbTiO3]-
[Pb (Ni1/3 Nb2/3 >03] Porcelain composition of the present invention in which 0.5 to 30 mo 1% of Pb is replaced by at least one ion of Sr2+, Ba2, and at least one type of 2+ in the three-component composition. The ceramic composition of the present invention maintains a high dielectric constant, has a small change in dielectric constant due to temperature, and can satisfy the Y5T characteristics of the EIA standard.Furthermore, the porcelain composition of the present invention can be used at a low temperature of 1050°C or less. Because it can be sintered,
An inexpensive silver-palladium alloy can be used for the internal electrodes of multilayer ceramic capacitors.
(以下余白)
実施例21
E P b (M Q 1/2 W1/2 )
03 コ。 [PbT i03 コy [P b
(N 1173 Nb273 >03 ]Z
という組成式で表される主組成において、x=0.
3゜y=0.4 、 z=0.3としてPb2+をS
r2+T 15mo1%置換した組成物を選択し、実施
例1〜20て示した方法で誘電体粉末を合成した。得ら
れた誘電体粉末を有機溶媒中に分散させ、有機バインダ
と混練してスラリーを作製し、スラリーを通常のドクタ
ーブレード法を用いて成膜した。さらに通常のスクリー
ン印刷法で内部電極ペーストを印刷し、打ち抜いた後、
積層、熱プレスを行って得た積層体を所定の形状で切断
してコンデンサのグリンチップを作製した。グリーンチ
ップを所定の温度サイクルで脱バインダを行った後、所
定の方法で焼成を行った。(Left below) Example 21 E P b (M Q 1/2 W 1/2)
03 Ko. [PbT i03 Koy [Pb
(N 1173 Nb273 >03 ]Z
In the main composition expressed by the composition formula, x=0.
3゜Pb2+ is S with y=0.4 and z=0.3
A composition in which 15 mo1% of r2+T was substituted was selected, and dielectric powder was synthesized by the method shown in Examples 1 to 20. The obtained dielectric powder was dispersed in an organic solvent and kneaded with an organic binder to prepare a slurry, and the slurry was formed into a film using a conventional doctor blade method. Furthermore, after printing the internal electrode paste using the normal screen printing method and punching it out,
The laminate obtained by laminating and hot pressing was cut into a predetermined shape to produce a capacitor green chip. After removing the binder from the green chip using a predetermined temperature cycle, it was fired using a predetermined method.
この時の焼成方法の模式図を第2図に示す。第2図(a
)は、マグネシアセッター4上に50個のコンデンサグ
リーンチップ5を載せ、下蓋1、枠2および上蓋3より
なるマグネシア匣鉢中で密閉雰囲気で焼成する方法を示
したもので、方法1とする。第2図(b)は、マグネシ
アセッター4上に150個のチップ5を載せ、方@1と
同様に焼成する方法を示したもので、方法2とする。第
2図(C)は、マグネシアセッター4にジルコン酸鉛(
PbZI”03)の粉末を敷き、その上に50個のチッ
プ5を載せて開放雰囲気で焼成する方法を示したもので
、方法3とする。A schematic diagram of the firing method at this time is shown in FIG. Figure 2 (a
) shows a method in which 50 capacitor green chips 5 are placed on a magnesia setter 4 and fired in a closed atmosphere in a magnesia sagger made of a lower lid 1, a frame 2, and an upper lid 3, and is referred to as method 1. . FIG. 2(b) shows a method in which 150 chips 5 are placed on a magnesia setter 4 and fired in the same manner as method @1, which is referred to as method 2. Fig. 2 (C) shows that the magnesia setter 4 has lead zirconate (
This is method 3, in which PbZI''03) powder is spread, 50 chips 5 are placed on top of it, and fired in an open atmosphere.
得られた各焼結体に銀ペーストで外部電極を形成し、一
定の焼成プロフィールで焼付けを行った。External electrodes were formed on each of the obtained sintered bodies using silver paste, and baking was performed using a fixed firing profile.
以上のようにして作製した積層セラミックコンデンサの
電気的特性を実施例1〜20で示した方法で測定した。The electrical characteristics of the multilayer ceramic capacitor produced as described above were measured by the method shown in Examples 1-20.
その結果を第2表に示す。The results are shown in Table 2.
比較例11
[Pb (Mg1/2 Wl/2 ) 03]X [P
bT 103 コy [Pb (N 11 /3
Nb273 >03 ]Z という組成式で表
される主組成において、x=0.3゜y=0.4 、
z=0.3としてPb2+の置換を行わない組成物を用
いて実施例21で示した方法でグリーンチップを作製し
、次いで実施例21と同様の方法て焼成を行い、電気的
特性を測定して、実施例21で測定した特性と併せて第
2表に示した。Comparative Example 11 [Pb (Mg1/2 Wl/2) 03]X [P
bT 103 Koy [Pb (N 11 /3
In the main composition expressed by the composition formula Nb273 >03 ]Z, x=0.3° y=0.4,
A green chip was prepared by the method shown in Example 21 using a composition in which z = 0.3 and Pb2+ was not substituted, and then baked in the same manner as in Example 21, and the electrical characteristics were measured. The properties are shown in Table 2 together with the properties measured in Example 21.
第2表に示したように、実施例21で焼成した積層セラ
ミックコンデンサの電気的特性は、コンデンサの焼成数
量、焼成方法によらずほとんど差がないのに対して、比
較例11で焼成した積層セラミックコンデンサの電気的
特性は、焼成数量、焼成方法に大きく影響を受ける。As shown in Table 2, the electrical characteristics of the multilayer ceramic capacitor fired in Example 21 are almost the same regardless of the number of capacitors fired and the firing method, whereas the multilayer ceramic capacitor fired in Comparative Example 11 The electrical characteristics of ceramic capacitors are greatly affected by the firing quantity and firing method.
なあ、本発明の主成分の範囲外ではキュリー点が著しく
高温側、あるいは低温側にかたよるため、誘電率が低く
実用的でない。またSr2+あるいはBa”o置換量が
30mo 1%を超えると焼成温度が1100℃以上に
なり、内部電極に安価な銀・パラジウム合金を用いるこ
とができない。したがって、本発明の磁器組成物の範囲
は前述のように限定される。Incidentally, outside the range of the main components of the present invention, the Curie point is significantly shifted toward the high temperature side or the low temperature side, resulting in a low dielectric constant and impractical. Furthermore, if the amount of Sr2+ or Ba"o substitution exceeds 30mo1%, the firing temperature will exceed 1100°C, making it impossible to use an inexpensive silver-palladium alloy for the internal electrodes. Therefore, the range of the ceramic composition of the present invention is Limited as above.
(以下余白)
第2表
[発明の効果]
本発明の磁器組成物は、誘電率が高く、温度による誘電
率の変化も小さい。また良好な誘電損失の値を持ち、低
い温度で焼結が可能である。したがって温度特性の優れ
た積層セラミックコンデンサを製造することが可能であ
り、かつコンデンサの内部電極に安価な銀・パラジウム
を用いることができる。(The following is a blank space) Table 2 [Effects of the Invention] The ceramic composition of the present invention has a high dielectric constant and a small change in dielectric constant due to temperature. It also has a good dielectric loss value and can be sintered at low temperatures. Therefore, it is possible to manufacture a multilayer ceramic capacitor with excellent temperature characteristics, and inexpensive silver and palladium can be used for the internal electrodes of the capacitor.
また、本発明の磁器組成物を用いて作製した積層セラミ
ックコンデンサは焼成雰囲気、焼成方法に対して安定し
た特性を得ることができ、量産時の焼成工程の管理が容
易になる。Further, the multilayer ceramic capacitor manufactured using the ceramic composition of the present invention can obtain stable characteristics with respect to the firing atmosphere and firing method, and the firing process can be easily managed during mass production.
第1図は本発明の主成分組成範囲を示す3成分組成図、
第2図は実施例および比較例で用いた焼成方法を説明す
るための説明図である。
1・・・マグネシア匣鉢の下蓋
2・・・マグネシア匣鉢の枠
3・・・マグネシア匣鉢の上蓋
4・・・マグネジアセツタ
5・・・コンデンサグリーンチップFIG. 1 is a three-component composition diagram showing the main component composition range of the present invention,
FIG. 2 is an explanatory diagram for explaining the firing method used in Examples and Comparative Examples. 1...Lower lid of magnesia sagger 2...Frame of magnesia sagger 3...Top lid of magnesia sagger 4...Magnesia sagger 5...Capacitor green chip
Claims (1)
1_/_2W_1_/_2)O_3]、チタン酸鉛[P
bTiO_3]およびニッケル・ニオブ酸鉛[Pb(N
i_1_/_3Nb_2_/_3)O_3]からなる3
成分組成物を[Pb(Mg_1_/_2W_1_/_2
1/2)O_3]_x[PbTiO_3]_y[Pb(
Ni_1_/_3Nb_2_/_3)O_3]_z(た
だしx+y+z=1.0)と表現したとき、以下の組成
点、 (x=0.693,y=0.297,z=0.01)(
x=0.495,y=0.495,z=0.01)(x
=0.195,y=0.455,z=0.35)(x=
0.10,y=0.40,z=0.50)(x=0.0
6,y=0.24,z=0.70)を結ぶ線上、および
この5点に囲まれる組成範囲内にある主成分組成物にお
いて、鉛イオン(Pb^2^+)をバリウムイオン(B
a^2^+)、ストロンチウムイオン(Sr^2^+)
のうち少なくとも1種類のイオンで0.5〜30mol
%置換したことを特徴とする磁器組成物。(1) Magnesium lead tungstate [Pb(Mg_
1_/_2W_1_/_2)O_3], lead titanate [P
bTiO_3] and nickel lead niobate [Pb(N
i_1_/_3Nb_2_/_3)O_3]
The component composition is [Pb(Mg_1_/_2W_1_/_2
1/2)O_3]_x[PbTiO_3]_y[Pb(
When expressed as Ni_1_/_3Nb_2_/_3)O_3]_z (where x+y+z=1.0), the following composition point, (x=0.693, y=0.297, z=0.01)(
x=0.495, y=0.495, z=0.01) (x
=0.195, y=0.455, z=0.35) (x=
0.10, y=0.40, z=0.50) (x=0.0
6, y=0.24, z=0.70) and within the composition range surrounded by these five points, lead ions (Pb^2^+) are replaced by barium ions (B
a^2^+), strontium ion (Sr^2^+)
0.5 to 30 mol of at least one type of ion
% substitution.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2224419A JPH0645498B2 (en) | 1990-08-28 | 1990-08-28 | Porcelain composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2224419A JPH0645498B2 (en) | 1990-08-28 | 1990-08-28 | Porcelain composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04108655A true JPH04108655A (en) | 1992-04-09 |
JPH0645498B2 JPH0645498B2 (en) | 1994-06-15 |
Family
ID=16813485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2224419A Expired - Fee Related JPH0645498B2 (en) | 1990-08-28 | 1990-08-28 | Porcelain composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0645498B2 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58161972A (en) * | 1982-03-17 | 1983-09-26 | 日本電気株式会社 | Ceramic composition |
JPS6226705A (en) * | 1985-07-29 | 1987-02-04 | 株式会社東芝 | High permeability ceramic composition |
JPS643045A (en) * | 1987-06-24 | 1989-01-06 | Matsushita Electric Ind Co Ltd | Dielectric porcelain composition |
JPH029753A (en) * | 1988-06-27 | 1990-01-12 | Tdk Corp | Ceramic composition having high dielectric constant |
JPH0264055A (en) * | 1988-08-31 | 1990-03-05 | Toshiba Corp | Ceramic composition having high permittivity and ceramic condenser |
-
1990
- 1990-08-28 JP JP2224419A patent/JPH0645498B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58161972A (en) * | 1982-03-17 | 1983-09-26 | 日本電気株式会社 | Ceramic composition |
JPS6226705A (en) * | 1985-07-29 | 1987-02-04 | 株式会社東芝 | High permeability ceramic composition |
JPS643045A (en) * | 1987-06-24 | 1989-01-06 | Matsushita Electric Ind Co Ltd | Dielectric porcelain composition |
JPH029753A (en) * | 1988-06-27 | 1990-01-12 | Tdk Corp | Ceramic composition having high dielectric constant |
JPH0264055A (en) * | 1988-08-31 | 1990-03-05 | Toshiba Corp | Ceramic composition having high permittivity and ceramic condenser |
Also Published As
Publication number | Publication date |
---|---|
JPH0645498B2 (en) | 1994-06-15 |
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