JPH0410541A - Formation of thin film wiring and manufacturing device - Google Patents

Abstract

PURPOSE:To attain an enhancement in the performance of a wiring by a method wherein a distortion of a proper amount is introduced in an Al layer and thereafter, a heat treatment is applied to this Al layer. CONSTITUTION:An insulating film 20 is formed on a semiconductor substrate 10 with an active part formed thereon and thereafter, a wiring layer is formed. A P-type or N-type high-concentration diffused region 11 is formed by an ion implantation performed selectively using a prescribed mask and a heat treatment performed subsequently to the ion implantation. The wiring layer consists of an Al layer 30 and W layers 40 and 41. A thin oxide film formed on the surface of the region 11 is removed using an aqueous solution containing a hydrofluoric acid. The W layer 40 of a film thickness of 100nm is formed on the substrate held at about 200 deg.C by a normal magnetron sputtering method, subsequently, the AlSi film 30 of a film thickness of 500nm is formed on the substrate held at about 200 deg.C and thereafter, the W film 41 of a film thickness of 50nm is again formed. In this state, the substrate with the wiring layer formed thereon is cooled at 0 deg.C or lower using a substrate installing chamber 110 for growing crystal grains to introduce a strain of a proper amount in the layer 30. After that, power which is supplied to a heater 143 is increased and a heat treatment of 200 to 500 deg.C is performed on the layer 30. The Al crystal grains are grown by this treatment.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field 1] The present invention relates to highly integrated semiconductor devices, and particularly to wiring suitable for high current density.

[Prior Art] Lamination of Al alloy wiring for semiconductors has been attempted in order to improve reliability and performance.

As a typical conventional example, 26th Annual Proceedings Reliability Physics (1988), pages 173 to 178 (26th Annual Proceedings Reliability Physics)
Proceedings
Physics (1988) pp, ]] 73-178, and the like.

[Problems to be Solved by the Invention] In the above-mentioned conventional technology, the performance improvement rate of wiring due to the layered structure is low and is insufficient for future high current densities, especially in terms of electromigration.

An object of the present invention is to solve this problem and provide fine and highly reliable semiconductor wiring by achieving high performance wiring.

[Means for Solving the Problems] In the present invention, the above problems are solved by introducing an appropriate amount of strain into the Al layer and then applying heat treatment to the Al layer to grow crystal grains. .

[Effect 1] It has been found that electromigration resistance strongly depends on the quality of the Al film. In the case of the conventional example above, the lifespan of the laminated wiring is longer than that of the single-layer film wiring, but as the wiring becomes finer, the lifespan may be as short as that of the single-layer Al film, or even shorter than that of the single-layer film. It is.

In this case, it can be considered that the quality of the Al film is rather deteriorated due to the layering. For example, in wiring created by a normal method, the laminated structure has a smaller crystal grain size and a lower orientation. The crystal grain size depends on the wiring width, and the narrower the width, the smaller the grain size.

When electricity is applied to a wiring layered with Al alloy and different conductive materials, A
Due to the movement of l atoms, an Al deficient region (void) is generated. When a void grows and crosses the wiring, current flows through the layer of different conductive materials, but this region has a large resistance and a high current density, causing a local temperature rise due to Joule heat. When the temperature rises above a certain limit, deterioration processes such as fusing and oxidation progress, leading to wire breakage.

Since the movement of Al atoms mainly occurs through grain boundaries, A
By adjusting the crystal orientation of the L layer and changing the film quality so as to coarsen the crystal grains, the above deterioration of the electrical properties can be prevented.

In the present invention, we have found that it is effective to introduce an appropriate amount of strain into the Al layer and then heat treat it in order to grow crystal grains. As a result, it is possible to solve the conventional problem of disordered orientation of Aff crystals due to interaction between AR gold alloys and deterioration of characteristics due to refinement of crystal grains in interconnects in which conductive materials of different types are laminated.

[Example] The present invention will be explained below with reference to examples.

Example 1 FIG. 1 shows the device manufacturing process of the present invention using a cross-sectional view of a semiconductor device. After an insulating film 20 is formed on a semiconductor substrate 10 on which an active part is formed by a normal semiconductor device manufacturing process, a wiring layer is formed.

Reference numeral 11 denotes a highly concentrated P-type or N-type diffusion region formed by selectively performing ion implantation using a predetermined mask and subsequent heat treatment. The wiring consists of an Al layer 3o and W layers 40 and 41. The thin oxide film formed on the surface of the diffusion region 11 is removed with an aqueous solution containing hydrofluoric acid. A W film 40 with a thickness of 1100 nm was deposited on a substrate kept at about 200°C by ordinary magnetron sputtering.
was formed on the substrate kept at about 200°C.
After forming the A Q Si film 30 with a thickness of 50 nm, a W film 41 with a thickness of 50 nm is formed again (FIG. 1a).

In this state, the substrate on which the wiring layer is formed is cooled to below zero degrees Celsius to introduce strain into the Al layer 30. Compared to Si substrate, Al
has a large coefficient of thermal expansion (coefficient of linear expansion of Si = 2.5 ppm/
℃, coefficient of linear expansion of Al = 23 ppm/'C), and because the Si substrate is an order of magnitude thicker than Al (the thickness of the Si substrate is approximately 500 μm), there is almost no difference in the amount of shrinkage between the two upon cooling. All of this is introduced as strain into the Al layer.

In order to vary the amount of strain introduced, an apparatus shown in FIG. 2 was used. This device will be described in detail in Example 3. The wafer is held in a wafer holder 145 made of an Al-gold alloy with high thermal conductivity, and the vacuum level of the heat insulating layer 144 and the amount of heat generated by the heater 143 are adjusted to cool the substrate to a cooling temperature between 0°C and -200°C. Hold for about 10 minutes. In this state, Al crystals hardly grow, and the grain size is about 1100-500n.
A large amount of strain is introduced into Al. The soil symbol in the figure represents a dislocation, indicating that strain has been introduced (Figure 1b).

Thereafter, the power supplied to the heater 143 of this device is increased to perform heat treatment at 200°C to 500°C. This treatment causes Al crystal grains to grow, and the final crystal grain size of Al that has been strained through a cooling process is larger than that of Al that is not subjected to this treatment (FIG. 1C). Although the degree to which the crystal grains become larger varies depending on the cooling temperature and the heat treatment temperature, by providing a cooling step, the grain size of Al becomes larger by 20 to ]-00% compared to the case without cooling.

After processing into a wiring shape using a normal photo-etching process and covering the surface with an insulating film 50, an external connection part 51 is formed.
Only the insulating film 50 is removed (FIG. 1d).

Electrify these wires and electromigration 1
The results of measuring the properties are shown in Table 1 and FIG.

With conventional conventional processing, the reliability of the interconnects decreases rapidly as the interconnects become finer, and the decrease in reliability is particularly significant for interconnects with a width of 1.0 μm or less, but with the treatment of the present invention, Even when the wiring becomes finer and the width becomes less than 1.0 μm, almost constant reliability can be maintained.

Table 1 Converted wiring life characteristics (unit: 10G seconds) Wiring structure: W/ A Q Si / W (501500/
(loOnm thickness) The holding temperature during the cooling process has a strong influence on the wiring life. As seen in FIG. 3, the lower the cooling temperature, the longer the life of the wiring, and this effect is clear at -50'C or lower, and especially noticeable at -100C or lower.

Furthermore, since Al crystal grain growth becomes active at temperatures above 200° C., the heat treatment must be performed at at least this temperature or above.

Furthermore, by forming W on the upper layer of Al at a temperature below 200° C., at which almost no Al crystal grains grow, and subjecting it to subsequent steps, the wiring life can be further improved by several tens of percent to several times. At this time, the stronger the compressive stress of this W film, the greater the effect of promoting crystal grain growth.

In addition, this manufacturing method can be applied not only to wiring in the sandwich structure shown in Figure 1, but also to wiring in a structure in which a high-melting point metal layer is provided only below or only above the Al layer, and the same length can be applied. It has a lifespan extension effect.

Furthermore, the same effect can be obtained by applying it to single-layer Al wiring, but in this case large hillocks are likely to be formed.
This method is effective only when the heating process is performed at a relatively low temperature (below 300'C) or when the device has a single layer interconnection where hillocks are unlikely to be a serious problem.

The method described above does not depend on the type of Al-gold alloy or the type of high melting point material to be laminated. That is, the Al layer is pure Al.
It may be an alloy containing at most several percent of Cu, Si, etc., and the high melting point material is W.

Mo, Ti and alloys thereof (for example, W-10wt%
Similar effects can be obtained with any of Ti) and compounds (eg, TiN). Table 2 shows the results of evaluating the characteristics of interconnects made using these materials in the same manufacturing process as above.

Table 2 Converted wiring life characteristics (unit: 106 seconds) [A) Wiring structure: A fl Si-0,5w%Cu /W
: (500/1100n thickness) CB) Wiring structure: A
Q S i / T i W: (500/1100
n thickness) [C] Wiring structure: AlSi/TiN: (500
/100 thickness) It is not necessary to perform the heating heat treatment immediately after the cooling step. Almost the same effect can be obtained even if it is applied after patterning.

Embodiment 2 FIG. 4 shows the device manufacturing process of the present invention using a cross-sectional view of a semiconductor device. In Example 1, the substrate was cooled after the film was formed, but in this example, it was performed at the end of the wiring forming process.

As in Example 1, an insulating film 20 is formed on a semiconductor substrate 10 on which an active part is formed by a normal semiconductor device manufacturing process, and then a wiring layer is formed. Reference numeral 11 denotes a highly concentrated P-type or N-type diffusion region formed by ion implantation selectively performed using a predetermined mask and subsequent heat treatment. The wiring is Al layer 30 and W layer 4
It consists of o. The thin oxide film formed on the surface of the diffusion region 11 is removed with an aqueous solution containing hydrofluoric acid. A W film 4o with a thickness of 1100 nm is formed by the usual magnetron sputtering method, and then an AlSi film 30 with a thickness of 500 nm is formed. It is processed into a wiring shape using a normal photo-etching process, and the surface is made of Si oxide.

Alternatively, it is covered with an insulating film 50 such as Si nitride having a mechanical strength (eg, elastic modulus) equal to or higher than that of Al (FIG. 4a).

The substrate in this state is cooled to below zero degrees Celsius to introduce strain into the Al layer 30. The coefficient of thermal expansion of Al is larger than that of Si substrate, Sl oxide, and S1 nitride (linear expansion coefficient of SiO2 ~
Q, 35 p p m/' Linear expansion coefficient of C15iN ~
5Ppm/°C), and because the Si substrate is an order of magnitude thicker than Al (the thickness of the Si substrate is approximately 500 μm), almost all of the difference in the amount of shrinkage between the two during cooling is introduced as strain into the Al layer. . As in Example 1, using the apparatus shown in FIG. 2, the substrate is held at a cooling temperature between 0° C. and -200° C. for about 10 minutes. In this state, the Al crystals have hardly grown, and the grain size is about 100 to 500 nm, and a large amount of strain has been introduced into the Al (Fig. 4b).

After that, increase the heater power of this device to 200℃.
Heat treatment at ~500°C. Although this treatment causes the growth of An crystal grains, Al
In this case, the final crystal grain size is larger than that in the case without this treatment (Fig. 4C).

The results of measuring electromigration resistance by applying current to these wirings are shown in Table 3 and FIG. 3.

Table 3 Converted wiring life characteristics (unit = 106 seconds) Wiring structure: A Q Si /W : (500/1100n
Thickness) With conventional conventional processing, the reliability of the wiring decreases rapidly as the wiring becomes finer, especially for wires with a width of 1.0 μm.
Although the reliability of wiring with a width of less than
Almost constant reliability can be maintained even at micrometers or less.

The holding temperature during the cooling process has a strong influence on the wiring life. As shown in Figure 3, the lower the cooling temperature, the longer the life of the wiring, and this effect is clear below -50℃, especially at -1
It is noticeable at temperatures below 00°C.

The electrical resistance value of the wiring also does not increase by introducing the treatment of the present invention.

Above, we have explained wiring mainly made of Al, but
Mainly made of high melting point metal such as W, with A on its surface or side.
Needless to say, this method is also effective for wiring in which Al or Al gold alloy regions are formed.

Embodiment 3 The diagram shown in FIG. 2 explains the basic configuration of a processing device of the present invention. The processes described in Examples 1 and 2 were carried out using the apparatus shown in FIG.

This device forms a thin film on a substrate and is capable of cooling and heating at the same time. It basically consists of five processing chambers, and the substrates are appropriately transported between each processing chamber and sequentially processed. The functions and configuration of the apparatus will be explained by taking the substrate processing in Example 1 as an example. The substrate is placed in the substrate introduction chamber 110.
After being set and evacuated, it is transported to the preprocessing chamber 120. Here, substrate cleaning processing such as heating and sputtering is performed. Next, the substrate is transported to the film forming chamber 130,
Deposits under specified conditions. After film formation, the substrate is placed in a heat treatment chamber 140.
and is subjected to heat treatment by cooling or heating. -20
Cooling down to 0°C can be achieved using liquid nitrogen. In the figure, the pressure in the heater 143 and the conductance fin chamber 144 is adjusted by the pressure regulator 141, and the substrate holder 145 is heated.
temperature to a predetermined temperature. After the heat treatment is completed, the substrate is transferred to the take-out chamber 150 and the series of treatments is completed.

In this way, continuous processing is possible without breaking the vacuum,
Particularly in the case of AI2 alloy, growth of crystal grains can be promoted without being constrained by a surface oxide film that is rapidly formed in the atmosphere. Therefore, it is possible to finally obtain a larger crystal grain size than when processing in the atmosphere.

This figure explains the concept of the device, and the configurations for film formation, cooling, heating, etc. are not necessarily the same as those shown here.
It is not necessary to use liquid nitrogen cooling or heater heating.

Embodiment 4 FIG. 5 shows the device manufacturing process of the present invention using a cross-sectional view of a semiconductor device. As in Examples 1 and 2, a semiconductor substrate 1 with active parts formed by a normal semiconductor device manufacturing process.
After forming the insulating film 20 on the wiring layer 0, a wiring layer is formed. 1
Reference numeral 1 denotes a highly concentrated P-type or N-type diffusion region formed by selectively performing ion implantation using a predetermined mask and subsequent heat treatment.

The wiring consists of an Al layer 30 and W layers 40 and 41.

The thin oxide film formed on the surface of the diffusion region 11 is removed with an aqueous solution containing hydrofluoric acid. A W film 40 with a film thickness of 1100 nm is formed by ordinary magnetron sputtering method, and then a W film 40 with a thickness of 50 nm is formed.
After forming the AR8i film 30 with a thickness of 0 nm, a thick W film 41 with a thickness of 500 nm is formed again (FIG. 5a).

The substrate on which the wiring layer is formed in this state is cooled to below zero degrees Celsius to introduce strain into the Al layer 30. The coefficient of thermal expansion of Al is larger than that of the Si substrate (coefficient of linear expansion of Si = 2.5 ppm/℃
, linear expansion coefficient of Al = 23 Ppm/'C), the Si substrate is an order of magnitude thicker than Al (the thickness of the Si substrate is approximately 500 μm), and the thick W layer provided on the surface is also thicker than Al. The coefficient of thermal expansion is small (coefficient of linear expansion of W ~ 5 ppm)
/°C), almost all of the difference in the amount of shrinkage between the two during cooling is introduced as strain into the Al layer. In order to vary the amount of strain introduced, the apparatus shown in FIG. 2 was used as in Examples 1 and 2 (FIG. 5b).

After taking it out from the device, a 500 nm thick W layer was placed on the surface.
selectively removed and heated to 400°C using a normal heat treatment furnace.
Annealing was performed for 30 minutes in a hydrogen atmosphere. Although Al crystal grains grow through this treatment, the final crystal grain size can be increased by providing a thick W layer on the surface. At this time, the stronger the compressive stress of this W film, the stronger the effect of promoting Al crystal grain growth. After heat treatment, by removing the surface W layer with high electrical resistance, the film can be made into a film that can be microprocessed (FIG. 5C).

Next, it is processed into a wiring shape using a normal photoetching process, and after covering the surface with an insulating film 5o, the insulating film is removed only at the external connection portion (FIG. 5d).

Table 4 shows the results of measuring electromigration resistance by applying electricity to these wirings.

With conventional conventional processing, the reliability of the interconnects decreases rapidly as the interconnects become finer, and the decrease in reliability is particularly significant for interconnects with a width of 1.0 μm or less, but with the treatment of the present invention, Even when the wiring becomes finer and the width becomes less than 1.0 μm, almost constant reliability can be maintained. Even when cooling treatment is performed in the same way, the effect is even more significant when a thick W layer is provided on the surface.

Table 4 Converted wiring life characteristics (unit = 106 seconds) Wiring structure: A Q S i /W (500/1100n thickness) The method described above does not depend on the type of Al-gold alloy or the type of material provided on the surface. That is, the Al layer may be pure Al or may be an alloy containing at most several percent of Cu, Si, etc., and the surface layer material may be W.

Mo, Ti and alloys thereof (for example, W-10wt%
Ti), compounds (e.g. T i N), and oxidized S1. The same effect can be obtained even with an insulating film such as Si nitride.

Furthermore, the surface layer material may be an Al-gold alloy of the same material. An example of this case will be described next.

Embodiment 5 FIG. 6 shows the device manufacturing process of the present invention using a cross-sectional view of a semiconductor device. As in Example 4, after an insulating film 2o is formed on a semiconductor substrate 10 on which an active part is formed by a normal semiconductor device manufacturing process, a wiring layer is formed. Wiring is A
It consists of an L layer 30 and a W layer 40.

A 30 nm thick W film 40 is formed by sputtering, followed by a 900 nm AΩSiΩSi film (Fig. 6a).
. In this state, the substrate on which the wiring layer is formed is cooled to below zero degrees Celsius to introduce strain into the Al layer 30. In order to vary the amount of strain introduced, the apparatus shown in FIG. 2 was used as in Examples 1 and 2 (FIG. 6b). After cooling to the desired temperature for 10 minutes, increase the heater power of this device to 200°C~
Heat treatment is performed at 500°C. This treatment causes Al crystal grains to grow (FIG. 6C). After taking it out from the device, A
lS1 layer 30 layers A (ls
An i-layer 30a is formed (FIG. 6d). In this process, An
Since the crystal grains do not change, the crystal grains eventually grow larger and a thin film suitable for microfabrication can be obtained.

After processing into a fine wiring shape using a resist process using an electron beam irradiation exposure method and covering the surface with an insulating film 50, the insulating film is removed only at the external connection portion (FIG. 6e).

Table 5 shows the results of measuring electromigration resistance by applying electricity to these wirings. Note that this table shows that the thickness of the AIJSi layer is 300 nm from the beginning,
For comparison, a sample was subjected to the same heat treatment, but only the etching process to reduce the film thickness was omitted.

In the case of conventional conventional processing, the reliability of the wiring rapidly decreases as the wiring becomes finer. Reliability can be restored by using the methods described in Examples 1 to 4, but this is not necessarily sufficient for wiring with a width and thickness of 0.5 μm or less.

However, by using this method, the wiring life is 2~2~
It has the effect of extending the lifespan by about three times.

Table 5 Converted wiring life characteristics (unit: 106 seconds) Wiring structure: A n S i /W (300/30 nm thickness) Example 6 This example will be explained using FIG. 6 of Example 5.

As in Example 5, after an insulating film 20 is formed on a semiconductor substrate 10 on which an active part is formed by a normal semiconductor device manufacturing process, a wiring layer is formed. The wiring consists of an Al layer 30 and a W layer 40.

A W film 40 with a thickness of 30 nm is formed by sputtering, and then an AlSi film 30 with a thickness of 900 nm is formed (FIG. 6a).
. In this state, the substrate with the wiring layer formed thereon has a diameter of 1 μm.
The following ice particles are held in suspended alcohol and ultrasonic waves are applied through the container. The ice particles collide with the film surface and introduce strain into the film (Figure 6b). In order to make the amount of strain appropriate, it is necessary to adjust the diameter of the ice particles, the power of the ultrasonic waves, the application time, etc. After taking it out from the apparatus, it was annealed at 400° C. for 30 minutes in a hydrogen atmosphere using a normal heat treatment furnace. This treatment causes Al crystal grains to grow (FIG. 6C). Subsequently, the AfiSi layer 30 is uniformly etched from layer surface 0 to a predetermined thickness (in this case, 300 mm).
AJISi layer 30a layer type 0a with film thickness reduced to nm)
(Figure 6d).

Since the Al crystal grains do not change in this step, the crystal grains eventually grow to a large size and a thin film suitable for microfabrication can be obtained.

After processing into a fine wiring shape using a resist process using an electron beam irradiation exposure method and covering the surface with an insulating film 50, the insulating film is removed only at the external connection portion (FIG. 6e).

As a result of energizing these wirings and measuring their resistance to electromigration, it was possible to achieve a long life comparable to that of Example 5 shown in Table 5.

Note that even if the AlSi layer is formed to have a thickness of 300 nm from the beginning and the same strain introduction treatment is performed, the same level of longevity can be achieved. However, in this case, it is necessary to carry out the process under optimized conditions so as to suppress as much as possible the increase in surface undulation due to the strain introduction process.

Furthermore, the fine particles used to introduce strain are not limited to ice.

Any material that does not chemically attack Al at room temperature can be used. However, in order to be able to completely remove it from the substrate after processing, it is preferable to use something that is liquid at room temperature, such as ice or alcohol. These fine particles need not be suspended in a liquid and may be injected toward the substrate surface in a gas or vacuum. Further, in this case, it is possible to perform the heat treatment and the introduction of strain at the same time, and it goes without saying that the same effect can be obtained in that case as well.

Furthermore, if the layer provided on the surface of the AnSi layer and removed after strain introduction is made sufficiently thick, strain introduction by rolling or the like is also possible.

Effect of the invention 1 As explained above, according to the present invention, Af
l Deterioration of migration wiring performance can be suppressed and high reliability of wiring can be achieved.

[Brief explanation of drawings]

Fig. 1.2.4.5.6 is a cross-sectional view of an element showing the process of forming a wiring structure according to an embodiment of the present invention, and Fig. 3 is a characteristic diagram showing the life test results of a wiring film according to an embodiment of the present invention. . Description of symbols 10...Si substrate, 11...High concentration impurity diffusion region (N+ or P10), 20...Insulating film such as Si oxide film, 30, 30a-Al alloy wiring or Al region 40 , 41... W layer, 50... Insulating film, 51...
...opening, 110...board mounting chamber, 111...
Substrate holder 110a=110e=one substrate, 120
...Pretreatment chamber, 121...RF power supply, 122...
・Electrode, 130-・Film forming chamber, 131・DC power supply,
132...Target, 140...Heat treatment chamber, 1
41...Pressure regulator, 142...Liquid nitrogen, 14
3...Heater, 144...Conductance fin 145...Substrate holder 150...Substrate removal chamber 151...Closed (C) Figure 1 ('d) or immediate pressure O) Step 1 (d) (shi) (C) (b) (0 n

Claims (1)

[Claims] 1. A method for forming thin film wiring formed on a substrate, which includes a step of controlling and introducing strain into the film after film formation, and heating performed at the same time as or after the above step. A thin film wiring forming method characterized by comprising the steps of: 2. The controlled introduction of strain into the film is achieved by: (1) cooling it below zero degrees Celsius after forming the film on the substrate; (2) introducing appropriately accelerated atoms, ions, or microparticles into the film; 2. The thin film wiring forming method according to claim 1, wherein the thin film wiring forming method is carried out by one of the following methods: (3) machining such as rolling. 3. The thin film wiring forming method according to claim 1 or 2, wherein the thin film wiring is formed by providing a layer containing pure Al or an Al alloy as a main component. 4. Claim 1, wherein the thin film wiring is formed by laminating pure Al or an Al alloy and a high melting point material.
Or the thin film wiring forming method described in 2. 5. W, Mo, Ti, alloys such as TiW containing these as main components, or Ti
5. The thin film wiring forming method according to claim 4, wherein a compound such as N is used. 6. The thin film wiring forming method according to any one of claims 2 to 5, wherein the cooling temperature is -50°C or lower, and the subsequent heating temperature is 300°C or higher. 7. The thin film wiring forming method according to claim 2, wherein the cooling step is performed before patterning the wiring or after covering the wiring with an insulating film. 8. It has a mechanism for forming a film on the substrate, a mechanism for cooling the substrate to below zero degrees Celsius, a mechanism for heating the substrate to 300 degrees Celsius or higher, and a mechanism for transporting the substrate between these mechanisms as necessary. A substrate processing apparatus characterized by: 9. The thin film wiring forming method according to any one of claims 1 to 7, wherein the thin film wiring formed on the substrate is a thin film wiring for a semiconductor device. 10. A method for forming thin film wiring formed on a substrate, which includes a step of controlling and introducing strain into the film, a heating step performed at the same time or after that, and a heating step applied to the surface of the thin film into which strain has been introduced. 1. A method for forming thin film wiring, comprising a step of removing part or all of different or similar materials.