JPH0399477A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPH0399477A
JPH0399477A JP23480589A JP23480589A JPH0399477A JP H0399477 A JPH0399477 A JP H0399477A JP 23480589 A JP23480589 A JP 23480589A JP 23480589 A JP23480589 A JP 23480589A JP H0399477 A JPH0399477 A JP H0399477A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
formed
layer
buffer layer
level difference
surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23480589A
Other versions
JP2805353B2 (en )
Inventor
Kozo Arao
Yasushi Fujioka
Mitsuyuki Niwa
Eiji Takeuchi
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/545Microcrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/546Polycrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/548Amorphous silicon PV cells

Abstract

PURPOSE: To enable light rays which are partially absorbed by an optical active layer to be reflected at an effective angle and to prevent a short circuit from occurring in a solar cell by a method wherein all or a part of a material which forms a buffer layer of prescribed thickness is polycrystalline ZnO, ZnS, or ZnSe, and the crystal concerned is maximized in grain diameter and irregularities formed on the surface of the buffer layer are made optimal in level difference.
CONSTITUTION: A light reflecting metal layer is formed on a base, and then a buffer layer of ZnO 0.2-14μm in thickness is formed, where irregularities provided to its surface are set to 0.5μm in level difference. Provided that the buffer layer is 0.5μm in grain size and 1.2μm in thickness, it is formed through a required method under a required condition, and then an N-type Si semiconductor layer, an I-type Si semiconductor layer, and a P-type Si semiconductor layer are formed through a prescribed device to constitute a photovoltaic layer 104, a transparent electrode 105 of ITO is deposited as thick as 800Å, a grid electrode 106 is formed on the upside of the electrode 105, and thus a PIN type solar cell is formed. In result, it is clear that there subsist a range of grain diameter optimal or adapted from a light reflecting metal polycrystalline film and a range of level difference optimal or adapted for irregularities formed on its surface.
COPYRIGHT: (C)1991,JPO&Japio
JP23480589A 1989-09-12 1989-09-12 Solar cells Expired - Fee Related JP2805353B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23480589A JP2805353B2 (en) 1989-09-12 1989-09-12 Solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23480589A JP2805353B2 (en) 1989-09-12 1989-09-12 Solar cells

Publications (2)

Publication Number Publication Date
JPH0399477A true true JPH0399477A (en) 1991-04-24
JP2805353B2 JP2805353B2 (en) 1998-09-30

Family

ID=16976666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23480589A Expired - Fee Related JP2805353B2 (en) 1989-09-12 1989-09-12 Solar cells

Country Status (1)

Country Link
JP (1) JP2805353B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994006159A1 (en) * 1992-09-04 1994-03-17 United Solar Systems Corporation Composite back reflector for photovoltaic device
US5453135A (en) * 1992-12-28 1995-09-26 Canon Kabushiki Kaisha Photoelectric conversion device with improved back reflection layer
US5486238A (en) * 1991-10-22 1996-01-23 Canon Kabushiki Kaisha Photovoltaic device
US5500055A (en) * 1992-02-05 1996-03-19 Canon Kabushiki Kaisha Photovoltaic device
US6388301B1 (en) 1998-06-01 2002-05-14 Kaneka Corporation Silicon-based thin-film photoelectric device
US6500690B1 (en) 1999-10-27 2002-12-31 Kaneka Corporation Method of producing a thin-film photovoltaic device
DE112007002342T5 (en) 2006-10-11 2009-11-05 Mitsubishi Materials Corp. The composition for electrode formation and method of forming the electrode using the composition
JP2011190711A (en) * 2010-03-12 2011-09-29 Komatsu Masakazu Combustion efficiency improvement tool
US8758891B2 (en) 2007-04-19 2014-06-24 Mitsubishi Materials Corporation Conductive reflective film and production method thereof
US8816193B2 (en) 2006-06-30 2014-08-26 Mitsubishi Materials Corporation Composition for manufacturing electrode of solar cell, method of manufacturing same electrode, and solar cell using electrode obtained by same method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159383A (en) * 1982-03-03 1983-09-21 Energy Conversion Devices Inc Photovoltaic element improved to have incident beam directing device for producing full internal reflection
JPS61288473A (en) * 1985-06-17 1986-12-18 Sanyo Electric Co Ltd Photovoltaic device
JPH01154570A (en) * 1987-12-10 1989-06-16 Mitsubishi Electric Corp Photovoltaic element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159383A (en) * 1982-03-03 1983-09-21 Energy Conversion Devices Inc Photovoltaic element improved to have incident beam directing device for producing full internal reflection
JPS61288473A (en) * 1985-06-17 1986-12-18 Sanyo Electric Co Ltd Photovoltaic device
JPH01154570A (en) * 1987-12-10 1989-06-16 Mitsubishi Electric Corp Photovoltaic element

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5770463A (en) * 1991-10-22 1998-06-23 Canon Kabushiki Kaisha Method of fabricating a photovoltaic device
US5486238A (en) * 1991-10-22 1996-01-23 Canon Kabushiki Kaisha Photovoltaic device
US5885725A (en) * 1992-02-05 1999-03-23 Canon Kabushiki Kaisha Photovoltaic device
US5981867A (en) * 1992-02-05 1999-11-09 Canon Kabushiki Kaisha Photovoltaic module
US5500055A (en) * 1992-02-05 1996-03-19 Canon Kabushiki Kaisha Photovoltaic device
US5589403A (en) * 1992-02-05 1996-12-31 Canon Kabushiki Kaisha Method for producing photovoltaic device
US6061977A (en) * 1992-02-05 2000-05-16 Canon Kabushiki Kaisha Photovoltaic roofing element
WO1994006159A1 (en) * 1992-09-04 1994-03-17 United Solar Systems Corporation Composite back reflector for photovoltaic device
US5296045A (en) * 1992-09-04 1994-03-22 United Solar Systems Corporation Composite back reflector for photovoltaic device
US5453135A (en) * 1992-12-28 1995-09-26 Canon Kabushiki Kaisha Photoelectric conversion device with improved back reflection layer
US6388301B1 (en) 1998-06-01 2002-05-14 Kaneka Corporation Silicon-based thin-film photoelectric device
US6500690B1 (en) 1999-10-27 2002-12-31 Kaneka Corporation Method of producing a thin-film photovoltaic device
US9620668B2 (en) 2006-06-30 2017-04-11 Mitsubishi Materials Corporation Composition for manufacturing electrode of solar cell, method of manufacturing same electrode, and solar cell using electrode obtained by same method
US8816193B2 (en) 2006-06-30 2014-08-26 Mitsubishi Materials Corporation Composition for manufacturing electrode of solar cell, method of manufacturing same electrode, and solar cell using electrode obtained by same method
US9312404B2 (en) 2006-06-30 2016-04-12 Mitsubishi Materials Corporation Composition for manufacturing electrode of solar cell, method of manufacturing same electrode, and solar cell using electrode obtained by same method
US8822814B2 (en) 2006-10-11 2014-09-02 Mitsubishi Materials Corporation Composition for electrode formation and method for forming electrode by using the composition
DE112007002342T5 (en) 2006-10-11 2009-11-05 Mitsubishi Materials Corp. The composition for electrode formation and method of forming the electrode using the composition
US10020409B2 (en) 2007-04-19 2018-07-10 Mitsubishi Materials Corporation Method for producing a conductive reflective film
US8758891B2 (en) 2007-04-19 2014-06-24 Mitsubishi Materials Corporation Conductive reflective film and production method thereof
JP2011190711A (en) * 2010-03-12 2011-09-29 Komatsu Masakazu Combustion efficiency improvement tool

Also Published As

Publication number Publication date Type
JP2805353B2 (en) 1998-09-30 grant

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees