JPH039529A - Manufacture of mos transistor - Google Patents

Manufacture of mos transistor

Info

Publication number
JPH039529A
JPH039529A JP14302089A JP14302089A JPH039529A JP H039529 A JPH039529 A JP H039529A JP 14302089 A JP14302089 A JP 14302089A JP 14302089 A JP14302089 A JP 14302089A JP H039529 A JPH039529 A JP H039529A
Authority
JP
Japan
Prior art keywords
film
diffusion region
thermally oxidized
silicon film
concentration diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14302089A
Other languages
Japanese (ja)
Inventor
Mariko Itou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP14302089A priority Critical patent/JPH039529A/en
Publication of JPH039529A publication Critical patent/JPH039529A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve hot carrier breakdown strength, and reduce the deterioration of characteristics, by forming a low concentration diffusion region under a gate electrode formed of thermally oxidized silicon film of little surface energy.
CONSTITUTION: A silicon nitride film 9 deposited on a polycrystalline silicon film 8 is etched, and coated with a silicon oxide film 11; etching is performed up to above a silicon substrate 1, thereby eliminating a thermally oxidized silicon film 7 and the polycrystalline silicon film 8. By this etching, the thermally oxidized silicon film 7 formed on the side surface of the polycrystalline silicon film 8 turning to a gate electrode is left, and a high concentration diffusion region 6 is formed by ion-implanting method. After the silicon oxide film 11 is eliminated, a low concentration diffusion region 4 is formed by ion-implanting method. Thereby, when electric field concentrates in the impurity diffusion region and hot carrier generates, capture is restrained because a gate oxide film 7 in contact with the low concentration diffusion region 4 is a thermally oxidized film so that an interface level is little.
COPYRIGHT: (C)1991,JPO&Japio
JP14302089A 1989-06-07 1989-06-07 Manufacture of mos transistor Pending JPH039529A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14302089A JPH039529A (en) 1989-06-07 1989-06-07 Manufacture of mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14302089A JPH039529A (en) 1989-06-07 1989-06-07 Manufacture of mos transistor

Publications (1)

Publication Number Publication Date
JPH039529A true JPH039529A (en) 1991-01-17

Family

ID=15329061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14302089A Pending JPH039529A (en) 1989-06-07 1989-06-07 Manufacture of mos transistor

Country Status (1)

Country Link
JP (1) JPH039529A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5102815A (en) * 1990-12-19 1992-04-07 Intel Corporation Method of fabricating a composite inverse T-gate metal oxide semiconductor device
JPH07135318A (en) * 1993-11-05 1995-05-23 Semiconductor Energy Lab Co Ltd Fabrication of semiconductor device
US6218678B1 (en) 1993-11-05 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2002022553A3 (en) * 2000-09-11 2003-04-24 Musc Found For Res Dev Non-natural basic amino acids, their preparation and use
JP2011035217A (en) * 2009-08-04 2011-02-17 Fujitsu Semiconductor Ltd Method of manufacturing semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5102815A (en) * 1990-12-19 1992-04-07 Intel Corporation Method of fabricating a composite inverse T-gate metal oxide semiconductor device
JPH07135318A (en) * 1993-11-05 1995-05-23 Semiconductor Energy Lab Co Ltd Fabrication of semiconductor device
US6218678B1 (en) 1993-11-05 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6475839B2 (en) 1993-11-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing of TFT device by backside laser irradiation
US6617612B2 (en) * 1993-11-05 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a semiconductor integrated circuit
WO2002022553A3 (en) * 2000-09-11 2003-04-24 Musc Found For Res Dev Non-natural basic amino acids, their preparation and use
JP2011035217A (en) * 2009-08-04 2011-02-17 Fujitsu Semiconductor Ltd Method of manufacturing semiconductor device

Similar Documents

Publication Publication Date Title
JPH039529A (en) Manufacture of mos transistor
JPH03101238A (en) Mos type semiconductor device and its manufacture
JPH0411736A (en) Semiconductor device and manufacture thereof
JPH0382163A (en) Power mosfet and manufacture thereof
JPH02265248A (en) Manufacture of mos-type transistor
JPH03296270A (en) Semiconductor device and manufacture thereof
JPH0232545A (en) Manufacture of semiconductor device
JPS62133714A (en) Manufacture of semiconductor device
JPH03188637A (en) Manufacture of semiconductor device
JPS62241376A (en) Manufacture of mos type semiconductor device
JPH0349235A (en) Manufacture of mos-type semiconductor device
JPH0249435A (en) Manufacture of semiconductor device
JPH03148135A (en) Mis semiconductor device and manufacture thereof
JPH0247871A (en) Manufacture of semiconductor device
JPH03104270A (en) Semiconductor device
JPH03246948A (en) Manufacture of semiconductor device
JPH02240933A (en) Manufacture of mos semiconductor device
JPS63252425A (en) Manufacture of semiconductor device
JPH0492417A (en) Manufacture of semiconductor device
JPS63219170A (en) Manufacture of mos semiconductor device
JPS63299167A (en) Manufacture of semiconductor device
JPS63310138A (en) Semiconductor device containing silicide layer
JPH0443662A (en) Semiconductor device and its manufacture
JPH039567A (en) Mos semiconductor device
JPH01112752A (en) Manufacture of semiconductor device