JPH0382552U - - Google Patents

Info

Publication number
JPH0382552U
JPH0382552U JP14382689U JP14382689U JPH0382552U JP H0382552 U JPH0382552 U JP H0382552U JP 14382689 U JP14382689 U JP 14382689U JP 14382689 U JP14382689 U JP 14382689U JP H0382552 U JPH0382552 U JP H0382552U
Authority
JP
Japan
Prior art keywords
chamber
gate valve
mask
sample
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14382689U
Other languages
Japanese (ja)
Other versions
JPH0735295Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989143826U priority Critical patent/JPH0735295Y2/en
Publication of JPH0382552U publication Critical patent/JPH0382552U/ja
Application granted granted Critical
Publication of JPH0735295Y2 publication Critical patent/JPH0735295Y2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図はこの考案の実施例を示し、一部を断面
とする正面図、第２図はマスクの部分を示す分解
斜視図、第３図は従来例の正面図である。 １……チエンバー、２……試料、６……ゲート
バルブ、７……前方室、８……マスク、１７……
収納部、２０……マスク窓。 FIG. 1 shows an embodiment of this invention, and is a partially sectional front view, FIG. 2 is an exploded perspective view showing a portion of the mask, and FIG. 3 is a front view of a conventional example. 1...Chamber, 2...Sample, 6...Gate valve, 7...Anterior chamber, 8...Mask, 17...
Storage section, 20...Mask window.

Claims (1)

【実用新案登録請求の範囲】 内部にイオンビーム照射対象の試料を配置して
なるチエンバーと、前記チエンバーに前方室を介
して連結されてあるゲートバルブとを具備し、前
記ゲートバルブより前方室を経て前記試料にイオ
ンビームを照射するようにしてなるイオン注入装
置において、 前記チエンバーとゲートバルブとの間の前方室
に、前記試料に前記イオンビームを照射する領域
を規制するマスクを着脱自在に設置するとともに
、前記マスクを中空とし、その内部に連通する冷
却管を取り付けてなる、 イオン注入装置。[Claims for Utility Model Registration] A chamber comprising a chamber in which a sample to be irradiated with an ion beam is placed, and a gate valve connected to the chamber through a front chamber, the front chamber being connected to the chamber from the gate valve. In the ion implantation apparatus, a mask is removably installed in a front chamber between the chamber and the gate valve to restrict an area where the sample is irradiated with the ion beam. and an ion implantation apparatus, wherein the mask is hollow and a cooling pipe communicating with the inside thereof is attached.
JP1989143826U 1989-12-13 1989-12-13 Ion implanter Expired - Fee Related JPH0735295Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989143826U JPH0735295Y2 (en) 1989-12-13 1989-12-13 Ion implanter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989143826U JPH0735295Y2 (en) 1989-12-13 1989-12-13 Ion implanter

Publications (2)

Publication Number Publication Date
JPH0382552U true JPH0382552U (en) 1991-08-22
JPH0735295Y2 JPH0735295Y2 (en) 1995-08-09

Family

ID=31690579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989143826U Expired - Fee Related JPH0735295Y2 (en) 1989-12-13 1989-12-13 Ion implanter

Country Status (1)

Country Link
JP (1) JPH0735295Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009519747A (en) * 2005-12-15 2009-05-21 キンバリー クラーク ワールドワイド インコーポレイテッド Treatment kit with thermal insert

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926151A (en) * 1972-07-04 1974-03-08
JPS57152653A (en) * 1981-03-17 1982-09-21 Ulvac Corp Wafer processing equipment for ion implanting device
JPS63200452A (en) * 1987-02-16 1988-08-18 Nec Corp Linear electron beam device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926151A (en) * 1972-07-04 1974-03-08
JPS57152653A (en) * 1981-03-17 1982-09-21 Ulvac Corp Wafer processing equipment for ion implanting device
JPS63200452A (en) * 1987-02-16 1988-08-18 Nec Corp Linear electron beam device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009519747A (en) * 2005-12-15 2009-05-21 キンバリー クラーク ワールドワイド インコーポレイテッド Treatment kit with thermal insert

Also Published As

Publication number Publication date
JPH0735295Y2 (en) 1995-08-09

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees