JPH0369130A - Resin-sealed type semiconductor device - Google Patents

Resin-sealed type semiconductor device

Info

Publication number
JPH0369130A
JPH0369130A JP20592889A JP20592889A JPH0369130A JP H0369130 A JPH0369130 A JP H0369130A JP 20592889 A JP20592889 A JP 20592889A JP 20592889 A JP20592889 A JP 20592889A JP H0369130 A JPH0369130 A JP H0369130A
Authority
JP
Japan
Prior art keywords
leads
solder
sheet thickness
thicker
protrusions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20592889A
Other languages
Japanese (ja)
Other versions
JP2765083B2 (en
Inventor
Kazuhiro Iino
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP20592889A priority Critical patent/JP2765083B2/en
Publication of JPH0369130A publication Critical patent/JPH0369130A/en
Application granted granted Critical
Publication of JP2765083B2 publication Critical patent/JP2765083B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic

Abstract

PURPOSE: To obtain a low-cost semiconductor device whose outer leads are not bent or do not fall off by a method wherein the melting point of a solder used to form a solder bump is made different from that of a solder of the outer leads, the sheet thickness of the outer leads is made thicker than the sheet thickness of inner leads and protrusions or holes are formed between the outer leads and the inner leads.
CONSTITUTION: The following are provided: a semiconductor chip 1 provided with solder bumps 2 which have been formed on electrode pads as input terminals; and a lead frame 3 which is provided with inner leads 3b, of a thin sheet thickness, connected to the solder bumps 2 and with outer leads 3a that are thicker than the sheet thickness of the inner leads 3b and that are coated with a solder whose melting point is lower than that of the solder bumps 2 and in which protrusions 6 or holes 5 are formed between the inner leads 3b and the outer leads 3a. For example, the thickness of outer leads 3a is made thicker than the thickness of inner leads 3b, and protrusions 6 and holes 5 are formed so as to expand the width at the boundary between the outer leads 3a and the inner leads 3b. In addition, solder bumps 2 are formed of a material composed of 90% of Sn and 10% of Pb, and a lead frame 3 is coated with a solder composed of 60% of Sn and 40% of Pb.
COPYRIGHT: (C)1991,JPO&Japio
JP20592889A 1989-08-08 1989-08-08 Resin-sealed semiconductor device Expired - Lifetime JP2765083B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20592889A JP2765083B2 (en) 1989-08-08 1989-08-08 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20592889A JP2765083B2 (en) 1989-08-08 1989-08-08 Resin-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPH0369130A true JPH0369130A (en) 1991-03-25
JP2765083B2 JP2765083B2 (en) 1998-06-11

Family

ID=16515061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20592889A Expired - Lifetime JP2765083B2 (en) 1989-08-08 1989-08-08 Resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JP2765083B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629149U (en) * 1991-10-15 1994-04-15 新電元工業株式会社 Resin-sealed semiconductor device
US5939776A (en) * 1996-05-17 1999-08-17 Lg Semicon Co., Ltd. Lead frame structure having non-removable dam bars for semiconductor package

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629149U (en) * 1991-10-15 1994-04-15 新電元工業株式会社 Resin-sealed semiconductor device
US5939776A (en) * 1996-05-17 1999-08-17 Lg Semicon Co., Ltd. Lead frame structure having non-removable dam bars for semiconductor package

Also Published As

Publication number Publication date
JP2765083B2 (en) 1998-06-11

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