JPH0363231B2 - - Google Patents

Info

Publication number
JPH0363231B2
JPH0363231B2 JP56117341A JP11734181A JPH0363231B2 JP H0363231 B2 JPH0363231 B2 JP H0363231B2 JP 56117341 A JP56117341 A JP 56117341A JP 11734181 A JP11734181 A JP 11734181A JP H0363231 B2 JPH0363231 B2 JP H0363231B2
Authority
JP
Japan
Prior art keywords
layer
stencil
substrate
thin film
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56117341A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5818982A (ja
Inventor
Hiroyuki Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56117341A priority Critical patent/JPS5818982A/ja
Publication of JPS5818982A publication Critical patent/JPS5818982A/ja
Publication of JPH0363231B2 publication Critical patent/JPH0363231B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP56117341A 1981-07-27 1981-07-27 蒸着薄膜形成方法 Granted JPS5818982A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56117341A JPS5818982A (ja) 1981-07-27 1981-07-27 蒸着薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56117341A JPS5818982A (ja) 1981-07-27 1981-07-27 蒸着薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS5818982A JPS5818982A (ja) 1983-02-03
JPH0363231B2 true JPH0363231B2 (enrdf_load_stackoverflow) 1991-09-30

Family

ID=14709303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56117341A Granted JPS5818982A (ja) 1981-07-27 1981-07-27 蒸着薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS5818982A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60224286A (ja) * 1984-04-21 1985-11-08 Nippon Telegr & Teleph Corp <Ntt> トンネル接合型ジヨセフソン素子の製法
JPH04110099U (ja) * 1990-11-30 1992-09-24 タツタ電線株式会社 音声変換素子用コイル

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55146927A (en) * 1979-05-07 1980-11-15 Citizen Watch Co Ltd Film forming device

Also Published As

Publication number Publication date
JPS5818982A (ja) 1983-02-03

Similar Documents

Publication Publication Date Title
US4337115A (en) Method of forming electrodes on the surface of a semiconductor substrate
JPH0363231B2 (enrdf_load_stackoverflow)
CN114823774B (zh) 超导电路、量子比特装置及其制备方法
JP3349001B2 (ja) 金属膜の形成方法
KR100324461B1 (ko) 계단형 모서리 조셉슨 접합의 제조방법
JPH0532915B2 (enrdf_load_stackoverflow)
JPH0511432B2 (enrdf_load_stackoverflow)
JPS62118539A (ja) 多層配線の形成方法
JPH02170420A (ja) 半導体素子の製造方法
JPS5845810B2 (ja) パタ−ンの形成方法
JPS58115835A (ja) 半導体装置の埋込配線形成方法
JPS5827664B2 (ja) 平坦表面を有する装置の製造方法
JPS63144547A (ja) 半導体装置の製造方法
JPH03157925A (ja) 半導体装置の製造方法
JPH0696664A (ja) 陰極装置の作製方法
JPH0145218B2 (enrdf_load_stackoverflow)
JP2001274471A (ja) 酸化物超伝導ジョセフソン接合の作製方法
JPH084078B2 (ja) 半導体装置の製造方法
JPH0141016B2 (enrdf_load_stackoverflow)
JPS60167325A (ja) 半導体装置の製造方法
JPS60223118A (ja) 半導体装置の製造方法
JPS6325519B2 (enrdf_load_stackoverflow)
JPS6321851A (ja) 半導体装置の製造方法
JPS6081830A (ja) アルミニウム膜のテ−パ−エツチング方法
JPH0530310B2 (enrdf_load_stackoverflow)