JPH0361347B2 - - Google Patents
Info
- Publication number
- JPH0361347B2 JPH0361347B2 JP275683A JP275683A JPH0361347B2 JP H0361347 B2 JPH0361347 B2 JP H0361347B2 JP 275683 A JP275683 A JP 275683A JP 275683 A JP275683 A JP 275683A JP H0361347 B2 JPH0361347 B2 JP H0361347B2
- Authority
- JP
- Japan
- Prior art keywords
- zone
- conductivity type
- band
- gate electrode
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 4
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 239000007943 implant Substances 0.000 description 11
- 230000000903 blocking effect Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3200634.9 | 1982-01-12 | ||
| DE19823200634 DE3200634A1 (de) | 1981-02-02 | 1982-01-12 | Mis-feldeffekttransistor mit ladungstraegerinjektion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58124275A JPS58124275A (ja) | 1983-07-23 |
| JPH0361347B2 true JPH0361347B2 (cs) | 1991-09-19 |
Family
ID=6152882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP275683A Granted JPS58124275A (ja) | 1982-01-12 | 1983-01-11 | Mis電界効果トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58124275A (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115370A (ja) * | 1984-06-30 | 1986-01-23 | Toshiba Corp | 半導体装置 |
| JP2572210B2 (ja) * | 1984-11-20 | 1997-01-16 | 三菱電機株式会社 | 縦型パワ−mos電界効果型半導体装置 |
-
1983
- 1983-01-11 JP JP275683A patent/JPS58124275A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58124275A (ja) | 1983-07-23 |
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