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JPH0358030A - Production of thin-film transistor array - Google Patents

Production of thin-film transistor array

Info

Publication number
JPH0358030A
JPH0358030A JP19581689A JP19581689A JPH0358030A JP H0358030 A JPH0358030 A JP H0358030A JP 19581689 A JP19581689 A JP 19581689A JP 19581689 A JP19581689 A JP 19581689A JP H0358030 A JPH0358030 A JP H0358030A
Authority
JP
Japan
Prior art keywords
electrodes
film
etched
light transparent
consisting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19581689A
Inventor
Keizo Yoshizako
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP19581689A priority Critical patent/JPH0358030A/en
Publication of JPH0358030A publication Critical patent/JPH0358030A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To eliminate shorting by laminating light transparent connecting electrodes formed simultaneously with picture element electrodes under plural non-light transparent gate electrodes and thereby constituting gate lines.
CONSTITUTION: The light transparent picture element electrodes 2 consisting of ITO and the connecting electrodes 12 are provided on a transparent substrate 1. The non-light transparent gate electrodes 3 consisting of Cr are deposited in superposition on the electrodes 12 to constitute the gate lines 4. A gate insulating film 5, a semiconductor 6 and a passivation film 7 are laminated and after a positive resist is applied thereon, the resist is exposed from the rear surface and is etched by development to form the patterns of passivation. The entire surface of the substrate 1 is coated with an impurity semiconductor film 8 and is so etched that the film 6 and the film 8 are formed across the film 7; further the film 5 is partly etched to form contact holes 11 for the purpose of contact with the electrodes 2 and the source electrodes 10; further, a metallic film consisting of Al is deposited and is etched to leave the parts corresponding to the films 10 and the drain electrodes 9. Finally, the films 8 shorting between the electrodes 9 and 10 are removed by etching. The shorting of thin-film transistor (TFT) is eliminated with the smallest number of stages.
COPYRIGHT: (C)1991,JPO&Japio
JP19581689A 1989-07-27 1989-07-27 Production of thin-film transistor array Pending JPH0358030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19581689A JPH0358030A (en) 1989-07-27 1989-07-27 Production of thin-film transistor array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19581689A JPH0358030A (en) 1989-07-27 1989-07-27 Production of thin-film transistor array

Publications (1)

Publication Number Publication Date
JPH0358030A true JPH0358030A (en) 1991-03-13

Family

ID=16347470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19581689A Pending JPH0358030A (en) 1989-07-27 1989-07-27 Production of thin-film transistor array

Country Status (1)

Country Link
JP (1) JPH0358030A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6259119B1 (en) 1997-12-18 2001-07-10 Lg. Philips Lcd Co, Ltd. Liquid crystal display and method of manufacturing the same
US6288414B1 (en) 1997-03-05 2001-09-11 Lg Electronics, Inc. Liquid crystal display and a double layered metal contact
US6949417B1 (en) 1997-03-05 2005-09-27 Lg. Philips Lcd Co., Ltd. Liquid crystal display and method of manufacturing the same
US7582903B2 (en) 2002-11-14 2009-09-01 Samsung Electronics Co., Ltd. Thin film transistor array panel

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288414B1 (en) 1997-03-05 2001-09-11 Lg Electronics, Inc. Liquid crystal display and a double layered metal contact
US6949417B1 (en) 1997-03-05 2005-09-27 Lg. Philips Lcd Co., Ltd. Liquid crystal display and method of manufacturing the same
US7462516B2 (en) 1997-03-05 2008-12-09 Lg Display Co., Ltd. Liquid crystal display and method of manufacturing the same
US6259119B1 (en) 1997-12-18 2001-07-10 Lg. Philips Lcd Co, Ltd. Liquid crystal display and method of manufacturing the same
US7582903B2 (en) 2002-11-14 2009-09-01 Samsung Electronics Co., Ltd. Thin film transistor array panel

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