JPH0357468B2 - - Google Patents

Info

Publication number
JPH0357468B2
JPH0357468B2 JP60229307A JP22930785A JPH0357468B2 JP H0357468 B2 JPH0357468 B2 JP H0357468B2 JP 60229307 A JP60229307 A JP 60229307A JP 22930785 A JP22930785 A JP 22930785A JP H0357468 B2 JPH0357468 B2 JP H0357468B2
Authority
JP
Japan
Prior art keywords
rays
sensitivity
alkα
pattern forming
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60229307A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6287954A (ja
Inventor
Yoshiki Suzuki
Nobuyuki Yoshioka
Noriaki Ishio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60229307A priority Critical patent/JPS6287954A/ja
Publication of JPS6287954A publication Critical patent/JPS6287954A/ja
Publication of JPH0357468B2 publication Critical patent/JPH0357468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP60229307A 1985-10-14 1985-10-14 パタ−ン形成法 Granted JPS6287954A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60229307A JPS6287954A (ja) 1985-10-14 1985-10-14 パタ−ン形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60229307A JPS6287954A (ja) 1985-10-14 1985-10-14 パタ−ン形成法

Publications (2)

Publication Number Publication Date
JPS6287954A JPS6287954A (ja) 1987-04-22
JPH0357468B2 true JPH0357468B2 (https=) 1991-09-02

Family

ID=16890088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60229307A Granted JPS6287954A (ja) 1985-10-14 1985-10-14 パタ−ン形成法

Country Status (1)

Country Link
JP (1) JPS6287954A (https=)

Also Published As

Publication number Publication date
JPS6287954A (ja) 1987-04-22

Similar Documents

Publication Publication Date Title
JPS60115222A (ja) 微細パタ−ン形成方法
JP2851996B2 (ja) デバイス製造方法
JPH08262717A (ja) レジスト組成物及びレジストパターンの形成方法
JPS5949536A (ja) 微細パタ−ン形成方法
JP2546690B2 (ja) 電子ビーム近接効果補償方法
JPH04226462A (ja) レジスト材料およびそれを用いるレジストパターンの形成方法
JP2875193B2 (ja) レジストパターン形成方法
JPH0357468B2 (https=)
JPS5918637A (ja) 像パタ−ンの形成方法
JP2001318472A5 (https=)
US4746596A (en) Method for microfabrication of pattern on substrate using X-ray sensitive resist
JP2867509B2 (ja) レジストパターンの形成方法
JPH0310298B2 (https=)
JP3502327B2 (ja) パターン形成材料及びパターン形成方法
Mladenov et al. General problems of high resolution lithography
JPS6399525A (ja) パタ−ン形成方法
JPH0357469B2 (https=)
Smith et al. X-ray lithography
JPS59121042A (ja) ネガ型レジスト組成物
JP2618978B2 (ja) レジスト材料およびこのレジスト材料を使用するパターン形成方法
JP2581147B2 (ja) Ｘ線リソグラフィ方法
US4937174A (en) Process of obtaining improved contrast in electron beam lithography
JPS60114857A (ja) 乾式現像用感光性組成物
JPH0377986B2 (https=)
Suzuki et al. X-Ray Lithography Using Chlorinated Polymethylstyrene (CPMS) as a Negative X-Ray Resist

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

EXPY Cancellation because of completion of term