JPH0349131B2 - - Google Patents
Info
- Publication number
- JPH0349131B2 JPH0349131B2 JP59143522A JP14352284A JPH0349131B2 JP H0349131 B2 JPH0349131 B2 JP H0349131B2 JP 59143522 A JP59143522 A JP 59143522A JP 14352284 A JP14352284 A JP 14352284A JP H0349131 B2 JPH0349131 B2 JP H0349131B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic
- protective insulating
- layer
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は磁気記録媒体中に磁化信号を効率良く
記録，再生する薄膜磁気ヘツドに関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film magnetic head that efficiently records and reproduces magnetization signals in a magnetic recording medium.
従来例の構成とその問題点
薄膜磁気ヘツドは半導体の製法である薄膜形成
技術や写真侵核技術を駆使し高精度な磁気ヘツド
を実現したものである。従来、磁気ヘツドはフエ
ライト、センダスト等の磁性材料を研削加工，ラ
ツピング等の機械加工によつて製作していたが、
高精度化、量産性に限界があり近年は薄膜磁気ヘ
ツドに感心が集まつており一部量産もはじまつて
いる。 Conventional structure and problems The thin film magnetic head is a highly accurate magnetic head that makes full use of semiconductor manufacturing methods such as thin film formation technology and photo invasive technology. Traditionally, magnetic heads have been manufactured from magnetic materials such as ferrite and sendust by machining processes such as grinding and wrapping.
There are limits to high precision and mass production, and in recent years thin film magnetic heads have been attracting attention, and mass production has begun in some cases.
薄膜磁気ヘツドは、薄膜形成技術、写真侵刻技
術を用いて加工するため磁気ヘツドの小型化、高
精度化が容易であり、さらに磁芯が薄膜で形成さ
れるため、(1)高周波での透磁率の劣化が少ない、
(2)記録に寄与するヘツド磁界が急峻であり高分解
能な記録ができる、(3)マルチトラツクにした場合
隣接トラツクとの対向面積が非常に少ないので各
ヘツド間のクロストークがほとんど問題にならな
いなどの特徴がある。 Thin-film magnetic heads are processed using thin-film formation technology and photo-engraving technology, making it easy to miniaturize and increase precision.Furthermore, since the magnetic core is formed from a thin film, (1) Less deterioration of magnetic permeability,
(2) The head magnetic field that contributes to recording is steep, allowing for high-resolution recording; (3) When using multitrack, the area facing adjacent tracks is very small, so crosstalk between each head is hardly a problem. It has such characteristics.
以下に従来の薄膜磁気ヘツドの構成について第
１図にもとづき説明する。第１図は従来の薄膜磁
気ヘツドの断面図を示すものであり、磁芯となる
磁性薄膜１、巻線となる導電性薄膜２、導電性薄
膜２と磁性薄膜１の絶縁材およびギヤツプ材とな
る絶縁薄膜３、磁性薄膜１を記録媒体４の走行に
よる摩耗から保護する保護絶縁薄膜５をスパツ
タ，電着等の方法を用いて付着し写真侵刻技術に
て所定の形状に加工している。薄膜磁気ヘツドは
従来の磁気ヘツドに比べて面積的にも体積的にも
非常に微細化されており、磁性薄膜１には実効透
磁率の高い材料、例えばFe−Ni合金、Fe−Al−
Si合金等の金属磁性材料が多く用いられる。導電
性薄膜２は微細化を考えて比抵抗の小さいAg，
Cu等の材料が用いられ、絶緑薄膜３、保護絶緑
薄膜５はSiO2，Al2O3等が用いられる。薄膜磁気
ヘツドは記録媒体４の走行による摩耗を考慮して
耐摩耗性材料の基板６上に薄膜を形成しガラス，
樹脂等の接着剤７によりカバー材８を接着した構
成である。 The structure of a conventional thin film magnetic head will be explained below with reference to FIG. FIG. 1 shows a cross-sectional view of a conventional thin film magnetic head, showing a magnetic thin film 1 as a magnetic core, a conductive thin film 2 as a winding, an insulating material between the conductive thin film 2 and the magnetic thin film 1, and a gap material. A protective insulating thin film 5 that protects the insulating thin film 3 and the magnetic thin film 1 from wear due to the running of the recording medium 4 is deposited using a method such as sputtering or electrodeposition, and processed into a predetermined shape by photoengraving technology. . The thin film magnetic head is much smaller in area and volume than conventional magnetic heads, and the magnetic thin film 1 is made of a material with high effective magnetic permeability, such as Fe-Ni alloy, Fe-Al-
Metal magnetic materials such as Si alloys are often used. The conductive thin film 2 is made of Ag, which has a low specific resistance, in consideration of miniaturization.
A material such as Cu is used, and the ever-green thin film 3 and the protective never-green thin film 5 are made of SiO 2 , Al 2 O 3 or the like. The thin film magnetic head is made by forming a thin film on a substrate 6 made of a wear-resistant material in consideration of the wear caused by the running of the recording medium 4.
It has a structure in which a cover material 8 is bonded with an adhesive 7 such as resin.
しかしながら上記のような構成では、磁性薄膜
１、導電性薄膜２、絶縁薄膜３の形成により保護
絶縁薄膜５上は15μm程度の凹凸が発生し、上記
凹凸はカバー材８の接着時に接着剤層７の厚みと
なる。薄膜磁気ヘツドのカバー接着は、磁性薄膜
１の実効透磁率の劣化や絶縁薄膜３の剥離等の問
題がありカバー材８の接着時に高温に上げること
が難かしく樹脂および低融点ガラスによる接着が
主流であるため接着剤層７が厚いと記録媒体４の
走行による保護絶緑薄膜５および磁性薄膜１の崩
れが発生し薄膜磁気ヘツドの寿命が短かいという
問題点を有していた。 However, in the above configuration, unevenness of about 15 μm occurs on the protective insulating thin film 5 due to the formation of the magnetic thin film 1, the conductive thin film 2, and the insulating thin film 3, and the unevenness is caused by the formation of the adhesive layer 7 when the cover material 8 is bonded. The thickness will be . When adhering the cover of a thin-film magnetic head, there are problems such as deterioration of the effective magnetic permeability of the magnetic thin film 1 and peeling of the insulating thin film 3, and it is difficult to raise the temperature to a high temperature when adhering the cover material 8. Therefore, adhesion using resin or low-melting glass is the mainstream. Therefore, if the adhesive layer 7 is thick, the protection thin film 5 and the magnetic thin film 1 will collapse due to the running of the recording medium 4, resulting in a problem that the life of the thin film magnetic head will be short.
発明の目的
本発明は上記従来の問題点を解消するもので磁
性薄膜、導電性薄膜および絶縁薄膜の形成により
発生する段差を保護絶縁薄膜の機械加工またはプ
ラズマ加工等によりなくしたカバー材と上記保護
絶縁薄膜の接着剤層を薄くすることにより記録媒
体の走行による保護絶縁薄膜および磁性薄膜の崩
れをなくし寿命を長くする事ができるとともに、
上部磁性薄膜に応力が加わつて透磁率が悪くなる
事を防止でき、しかも保護絶縁薄膜の製造が短時
間で出来る薄膜磁気ヘツドを提供する事を目的と
している。Purpose of the Invention The present invention solves the above-mentioned conventional problems, and provides a cover material and the above-mentioned protective cover material in which the step difference caused by the formation of the magnetic thin film, conductive thin film, and insulating thin film is eliminated by machining or plasma processing of the protective insulating thin film. By making the adhesive layer of the insulating thin film thinner, it is possible to eliminate the collapse of the protective insulating thin film and magnetic thin film due to the running of the recording medium, and to extend the life of the recording medium.
It is an object of the present invention to provide a thin film magnetic head that can prevent deterioration of magnetic permeability due to stress being applied to the upper magnetic thin film, and in which a protective insulating thin film can be manufactured in a short time.
発明の構成
本発明は、保護絶縁薄膜を上部磁性薄膜側に上
部磁性薄膜の熱膨張係数と略同じ熱膨張係数を有
する絶縁材料で形成された第１の層と、カバー材
側にSiO2で形成され、しかもカバー材が張り付
けられる面を平坦化した第２の層で構成したもの
である。この構成の薄膜磁気ヘツドは樹脂および
低融点ガラス等の接着剤層が2μm以下と従来の
15μmよりはるかに薄いため媒体の走行等による
接着剤層の摩耗が少なく保護絶縁薄膜、磁性薄膜
の崩れをなくした長寿命な薄膜磁気ヘツドを製作
するものである。Structure of the Invention The present invention provides a protective insulating thin film with a first layer formed of an insulating material having a thermal expansion coefficient substantially the same as that of the upper magnetic thin film on the upper magnetic thin film side, and a first layer made of SiO 2 on the cover material side. The second layer is formed and has a flattened surface to which the cover material is attached. The thin-film magnetic head with this configuration has an adhesive layer of resin and low-melting point glass of less than 2 μm, compared to conventional
Because it is much thinner than 15 μm, the adhesive layer suffers less wear due to media running, etc., and the protective insulating thin film and magnetic thin film do not collapse, creating a long-life thin film magnetic head.
実施例の説明
第２図は本発明の薄膜磁気ヘツドの断面図を示
すものであり、本発明の実施例を第２図にもとづ
き説明する。フエライト，SiO2等の基板１１上
にスパツタ等の方法でFe−Ni合金、Fe−Al−Si
合金等の強磁性体を３〜5μm程度付着しエツチン
グ，リフトオン等の方法にて下部磁性薄膜１２を
形成する。SiO2，Al2O3等でヘツドギヤツプとな
る第１絶縁薄膜１３を蒸着、スパツタ等の方法を
用いて0.5μm程度付着しその上に巻線となるCu，
Ag等の導電体を電着、スパツタ等で付着し所定
の導電薄膜１４を形成し導電性薄膜１４と上部磁
性薄膜１５とを電気的に絶縁するため第２絶縁薄
膜１６をフオトレジスト等で形成する。導電性薄
膜１４は小面積にて多巻線を考えて二層，三層と
第２絶縁薄膜１６を介して重ねる場合が多く第２
絶縁薄膜１６上に下部磁性薄膜１２と後部で磁気
的に接合するようにNi−Fe合金、Fe−Al−Si合
金等の金属磁性材料をスパツタ等の方法で３〜
5μm程度付着し上部磁性薄膜１５を形成する。下
部磁性薄膜１２、上部磁性薄膜１５を記録媒体１
７の走行による摩耗等から守るため保護絶縁薄膜
１８を20〜30μm程度付着する。この時保護絶縁
薄膜１８は第１の層及び第２の層からなつてお
り、第１の層は上部磁性薄膜１５の上に上部磁性
薄膜１５を構成する金属磁性材料と略同じくらい
の熱膨張係数を持つ絶縁材料で構成されており、
また第２の層は第１の層の上にSiO2で形成され
ている。そしてこの様に２層を重ねた事によつて
できた15μm程度の凹凸をなくすためラツピング
等の機械加工またはプラズマ加工により保護絶縁
薄膜１８を平坦化し記録媒体１７走行の安定化お
よび薄膜部の保護等のため樹脂や低融点ガラス等
の接着剤１９によりガラス等のカバー材２０を接
着している。DESCRIPTION OF EMBODIMENTS FIG. 2 shows a sectional view of a thin film magnetic head of the present invention, and an embodiment of the present invention will be described based on FIG. Fe-Ni alloy, Fe-Al-Si is deposited on a substrate 11 made of ferrite, SiO 2, etc. by sputtering or other method.
A ferromagnetic material such as an alloy is deposited to a thickness of about 3 to 5 μm, and a lower magnetic thin film 12 is formed by etching, lift-on, or other methods. A first insulating thin film 13 made of SiO 2 , Al 2 O 3 , etc. to form the head gap is deposited to a thickness of about 0.5 μm using a method such as vapor deposition or sputtering, and then Cu, which becomes the winding wire, is deposited on top of it.
A conductive material such as Ag is deposited by electrodeposition, sputtering, etc. to form a predetermined conductive thin film 14, and a second insulating thin film 16 is formed using photoresist or the like to electrically insulate the conductive thin film 14 and the upper magnetic thin film 15. do. Considering multiple windings in a small area, the conductive thin film 14 is often stacked in two or three layers with a second insulating thin film 16 interposed therebetween.
A metal magnetic material such as a Ni-Fe alloy or a Fe-Al-Si alloy is deposited on the insulating thin film 16 by a method such as sputtering so as to be magnetically bonded to the lower magnetic thin film 12 at the rear.
The upper magnetic thin film 15 is formed by depositing about 5 μm. The lower magnetic thin film 12 and the upper magnetic thin film 15 are connected to the recording medium 1.
A protective insulating thin film 18 of about 20 to 30 .mu.m is attached to protect it from abrasion caused by running the vehicle 7. At this time, the protective insulating thin film 18 is composed of a first layer and a second layer, and the first layer is placed on the upper magnetic thin film 15 and has approximately the same thermal expansion as the metal magnetic material that constitutes the upper magnetic thin film 15. It is composed of an insulating material with a coefficient of
Further, the second layer is formed of SiO 2 on the first layer. Then, in order to eliminate the unevenness of about 15 μm caused by stacking two layers in this way, the protective insulating thin film 18 is flattened by mechanical processing such as wrapping or plasma processing, thereby stabilizing the running of the recording medium 17 and protecting the thin film portion. For this reason, a cover material 20 such as glass is bonded with an adhesive 19 such as resin or low melting point glass.
以下保護絶縁薄膜１８を２層構造にした理由を
第３図を用いて説明する。第３図は磁性薄膜１
２，１５上の保護絶縁薄膜１８に熱膨張係数のち
がう絶縁材料を用いた場合の上部磁性薄膜１５の
透磁率劣化を示すものであり６×10-6deg-1〜15
×10-6deg-1の範囲を越えると透磁率が半分以下
になり薄膜磁気ヘツドの再生能力が極度に劣化す
る。従来は耐摩耗材料でありスパツタ等の付着方
法の簡単なSiO2等が主に用いられるが磁性薄膜
１２，１５との熱膨張係数差が大きいため磁性薄
膜１２，１５に応力がかかり透磁率の劣化が大で
ある。熱膨張係数を考慮してAl2O3、フオルステ
ライト（2MgO・SiO2）等により保護絶縁薄膜１
８を形成すると応力が小さく磁性薄膜１２，１５
の透磁率劣化がほとんどなくなる。 The reason why the protective insulating thin film 18 has a two-layer structure will be explained below with reference to FIG. Figure 3 shows magnetic thin film 1.
This shows the magnetic permeability deterioration of the upper magnetic thin film 15 when insulating materials with different thermal expansion coefficients are used for the protective insulating thin film 18 on the upper magnetic thin film 18 of 6×10 -6 deg -1 to 15.
If the value exceeds the range of ×10 -6 deg -1 , the magnetic permeability will be reduced to less than half, and the reproducing ability of the thin film magnetic head will be extremely degraded. Conventionally, SiO 2 has been mainly used as it is a wear-resistant material and can be easily attached by sputtering, but because of the large difference in coefficient of thermal expansion between the magnetic thin films 12 and 15, stress is applied to the magnetic thin films 12 and 15, resulting in a decrease in magnetic permeability. Significant deterioration. Considering the coefficient of thermal expansion, a protective insulating thin film 1 is made of Al 2 O 3 , forsterite (2MgO・SiO 2 ), etc.
8, the stress is small and the magnetic thin films 12, 15
The deterioration of magnetic permeability is almost eliminated.
Al2O3等はスパツタ速度が遅くSiO2のスパツタ
に比べて４〜５倍のスパツタ時間が必要であるた
め保護絶縁薄膜１８の構成を磁性薄膜１２，１５
と熱膨張係数の近いAl2O3、フオルステライト
（2MgO，SiO2）等により5μm程度形成しAl2O3，
フオルステライト上にAl2O3やフオルステライト
よりもスパツタ速度の速いSiO2の二層で形成す
ると応力による磁性薄膜１２，１５の透磁率の劣
化はなくスパツタ時間の短かい保護絶縁薄膜１８
が形成できる。 Since the sputtering speed of Al 2 O 3 etc. is slow and requires 4 to 5 times the sputtering time compared to sputtering of SiO 2 , the structure of the protective insulating thin film 18 is changed to the magnetic thin films 12 and 15.
Al 2 O 3 , forsterite (2MgO, SiO 2 ), etc. , with a thermal expansion coefficient similar to
When a double layer of Al 2 O 3 or SiO 2 , which has a faster sputtering speed than forstellite, is formed on forsterite, the magnetic permeability of the magnetic thin films 12 and 15 does not deteriorate due to stress, and the protective insulating thin film 18 has a short sputtering time.
can be formed.
以上のような構成の薄膜磁気ヘツドは基板１１
上の磁性薄膜１２，１５と略直角な面２１は記録
媒体１７と当接する面であり矢印は媒体の移動方
向である。この結果導電性薄膜１４に電流を流す
ことにより誘導される磁束は上部磁性薄膜１５よ
り記録媒体１７を通つて下部磁性薄膜１２と導び
かれ上部磁性薄膜１５へと戻る。記録媒体１７と
当接する面２１に露出する基板１１、保護絶縁薄
膜１８、カバー材２０が耐摩耗材料であり摩耗性
の劣る接着剤層１９が2μm以下と薄いため磁性薄
膜１２，１５の崩れ、摩耗が少なくなり寿命が長
くなる。また保護絶縁薄膜１８を２層構造とし、
上部磁性薄膜１５の上に直接形成される第１の層
を上部磁性薄膜１５を構成する金属磁性材料と略
同じ熱膨張係数を有する絶縁材料（例えばAl2O3
等）で構成し、その第１の層の上にSiO2で第２
の層を形成する事により、保護絶縁薄膜１８から
上部磁性薄膜１５に応力があまり加わらないの
で、上部磁性薄膜の磁気特性が劣化する事はな
い。また一般にスパツタレートが小さな第１の層
（Al2O3等）を5μm程形成し、その後に保護絶縁
薄膜として必要な膜厚までスパツタレートの大き
な第２の層を形成しているので、製造工程を短縮
できる。 The thin film magnetic head configured as described above has a substrate 11.
A surface 21 substantially perpendicular to the upper magnetic thin films 12 and 15 is a surface that comes into contact with the recording medium 17, and the arrow indicates the direction of movement of the medium. As a result, the magnetic flux induced by passing a current through the conductive thin film 14 is guided from the upper magnetic thin film 15 through the recording medium 17 to the lower magnetic thin film 12 and returns to the upper magnetic thin film 15. The substrate 11, the protective insulating thin film 18, and the cover material 20 exposed on the surface 21 that contacts the recording medium 17 are made of wear-resistant materials, and the adhesive layer 19, which has poor abrasion properties, is as thin as 2 μm or less, causing the magnetic thin films 12 and 15 to collapse. Less wear and tear and longer life. In addition, the protective insulating thin film 18 has a two-layer structure,
The first layer formed directly on the upper magnetic thin film 15 is made of an insulating material (for example, Al 2 O 3
etc.) and a second layer of SiO 2 on top of the first layer.
By forming this layer, little stress is applied from the protective insulating thin film 18 to the upper magnetic thin film 15, so that the magnetic properties of the upper magnetic thin film do not deteriorate. In addition, in general, a first layer (such as Al 2 O 3 ) with a small sputter rate is formed to a thickness of about 5 μm, and then a second layer with a large sputter rate is formed to the thickness required as a protective insulating thin film, so the manufacturing process can be simplified. Can be shortened.
発明の効果
本発明は、保護絶縁薄膜を上部磁性薄膜側に上
部磁性薄膜の熱膨張係数と略同じ熱膨張係数を有
する絶縁材料で形成された第１の層と、カバー材
側にSiO2で形成され、しかもカバー材が張り付
けられる面を平坦化した第２の層とで構成したも
のであるから、現状薄膜磁気ヘツドにおいて一番
の欠点である磁性薄膜の崩れや摩耗を減らし、信
頼性が高く長寿命であるとともに、上部磁性薄膜
に応力が加わつて透磁率が悪くなる事を防止で
き、しかも保護絶縁薄膜の製造が短時間で出来
る。Effects of the Invention The present invention provides a protective insulating thin film with a first layer formed of an insulating material having a thermal expansion coefficient substantially the same as that of the upper magnetic thin film on the upper magnetic thin film side, and a first layer made of SiO 2 on the cover material side. Furthermore, since it is composed of a second layer with a flattened surface to which the cover material is attached, it reduces the collapse and abrasion of the magnetic thin film, which is the biggest drawback in current thin-film magnetic heads, and improves reliability. In addition to being high and long-life, it is possible to prevent deterioration of magnetic permeability due to stress being applied to the upper magnetic thin film, and furthermore, the protective insulating thin film can be manufactured in a short time.
第１図は従来の薄膜磁気ヘツドの断面図、第２
図は本発明の一実施例における薄膜磁気ヘツドの
断面図、第３図は保護絶縁薄膜の熱膨張係数差に
よる透磁率の劣化状態を示す図である。
６６，１１……基板、１，１２，１５……磁性
薄膜、２，１４……導電性薄膜、３，１３，１６
……絶縁薄膜、４，１７……記録媒体、５，１８
……保護絶縁薄膜、７，１９……接着剤、８，２
０……カバー材。
Figure 1 is a sectional view of a conventional thin film magnetic head, Figure 2 is a cross-sectional view of a conventional thin film magnetic head.
This figure is a cross-sectional view of a thin film magnetic head according to an embodiment of the present invention, and FIG. 3 is a diagram showing a state of deterioration of magnetic permeability due to a difference in thermal expansion coefficient of a protective insulating thin film. 66, 11... Substrate, 1, 12, 15... Magnetic thin film, 2, 14... Conductive thin film, 3, 13, 16
...Insulating thin film, 4,17...Recording medium, 5,18
...Protective insulating thin film, 7,19...Adhesive, 8,2
0...Cover material.
Claims (1)
薄膜と、前記下部磁性薄膜の上に形成され、磁気
ギヤツプとなる第１の絶縁薄膜と、前記絶縁薄膜
の上に形成された導電薄膜と、前記導電薄膜の上
に形成された第２の絶縁薄膜と、前記第２の絶縁
薄膜の上に形成された上部磁性薄膜と、前記上部
磁性薄膜の上に形成された保護絶縁薄膜と、前記
保護絶縁薄膜の上に張り付けられたカバー材を備
え、前記保護絶縁薄膜は前記上部磁性薄膜側に前
記上部磁性薄膜と略同じ熱膨張係数を有する絶縁
材料で形成された第１の層と、前記カバー材側に
SiO2で形成され、しかも前記カバー材が張り付
けられる面を平坦化した第２の層とで構成される
事を特徴とする薄膜磁気ヘツド。1 a substrate, a lower magnetic thin film formed on the substrate, a first insulating thin film formed on the lower magnetic thin film and forming a magnetic gap, and a conductive thin film formed on the insulating thin film; , a second insulating thin film formed on the conductive thin film, an upper magnetic thin film formed on the second insulating thin film, a protective insulating thin film formed on the upper magnetic thin film, and the a cover material pasted on the protective insulating thin film, the protective insulating thin film having a first layer formed of an insulating material having substantially the same coefficient of thermal expansion as the upper magnetic thin film on the side of the upper magnetic thin film; on the cover material side
1. A thin film magnetic head comprising a second layer made of SiO 2 and having a flattened surface to which the cover material is attached.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14352284A JPS6124007A (en) | 1984-07-11 | 1984-07-11 | Thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14352284A JPS6124007A (en) | 1984-07-11 | 1984-07-11 | Thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6124007A JPS6124007A (en) | 1986-02-01 |
| JPH0349131B2 true JPH0349131B2 (en) | 1991-07-26 |
Family
ID=15340692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14352284A Granted JPS6124007A (en) | 1984-07-11 | 1984-07-11 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6124007A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0664710B2 (en) * | 1985-07-15 | 1994-08-22 | 株式会社日立製作所 | Thin film magnetic head |
| JP4154220B2 (en) | 2002-12-06 | 2008-09-24 | 株式会社日立グローバルストレージテクノロジーズ | Magnetic head and magnetic recording / reproducing apparatus using the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS524806U (en) * | 1975-06-24 | 1977-01-13 | ||
| JPS60138714A (en) * | 1983-12-27 | 1985-07-23 | Canon Inc | Manufacturing method of thin film magnetic head |
-
1984
- 1984-07-11 JP JP14352284A patent/JPS6124007A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6124007A (en) | 1986-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |