JPH0348427A - Bipolar semiconductor device and manufacture thereof - Google Patents

Bipolar semiconductor device and manufacture thereof

Info

Publication number
JPH0348427A
JPH0348427A JP6468190A JP6468190A JPH0348427A JP H0348427 A JPH0348427 A JP H0348427A JP 6468190 A JP6468190 A JP 6468190A JP 6468190 A JP6468190 A JP 6468190A JP H0348427 A JPH0348427 A JP H0348427A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
semiconductor
conductivity type
formed
base
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6468190A
Inventor
Shuichi Kameyama
Kazuya Kikuchi
Hiroshi Shimomura
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To improve the collector cut-off frequency of bipolar transistor by a method wherein the first conductivity type the second semiconductor gnawing into the base part of the second semiconductor region to be a base from the first conductivity type the first semiconductor layer to be a collector are formed beneath the ends of a masking material to make an emitter opening.
CONSTITUTION: The title bipolar semiconductor device is provided with the first conductivity type the first semiconductor layer 104 to be a collector; the second conductivity type the second semiconductor region 110 to be a base formed on the first semiconductor layer 104; the first conductivity type the third semiconductor regions 120A, 120B formed as if gnawing into the base part of the second semiconductor region 110 from the first semiconductor layer 104 in the shape of narrowing the base width B beneath the ends of a masking material 112; and the first conductivity type the fourth semiconductor region 132 to be an emitter formed in the second semiconductor region 110. For example, the said semiconductor regions 120A, 120B are formed yb selectively oblique ion-implanting phosphorus in high energy gradient through the emitter opening.
COPYRIGHT: (C)1991,JPO&Japio
JP6468190A 1989-04-04 1990-03-15 Bipolar semiconductor device and manufacture thereof Pending JPH0348427A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8541189 1989-04-04
JP6468190A JPH0348427A (en) 1989-04-04 1990-03-15 Bipolar semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6468190A JPH0348427A (en) 1989-04-04 1990-03-15 Bipolar semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH0348427A true true JPH0348427A (en) 1991-03-01

Family

ID=26405783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6468190A Pending JPH0348427A (en) 1989-04-04 1990-03-15 Bipolar semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH0348427A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719082A (en) * 1995-08-25 1998-02-17 Micron Technology, Inc. Angled implant to improve high current operation of bipolar transistors
US7199447B2 (en) 1995-08-25 2007-04-03 Micron Technology, Inc. Angled implant to improve high current operation of bipolar transistors
US7351637B2 (en) * 2006-04-10 2008-04-01 General Electric Company Semiconductor transistors having reduced channel widths and methods of fabricating same
JP2010506390A (en) * 2006-10-05 2010-02-25 インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Local collector implant structure and forming method for the heterojunction bipolar transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719082A (en) * 1995-08-25 1998-02-17 Micron Technology, Inc. Angled implant to improve high current operation of bipolar transistors
US5982022A (en) * 1995-08-25 1999-11-09 Micron Technology, Inc. Angled implant to improve high current operation of transistors
US6440812B2 (en) 1995-08-25 2002-08-27 Micron Technology, Inc. Angled implant to improve high current operation of bipolar transistors
US7199447B2 (en) 1995-08-25 2007-04-03 Micron Technology, Inc. Angled implant to improve high current operation of bipolar transistors
US7351637B2 (en) * 2006-04-10 2008-04-01 General Electric Company Semiconductor transistors having reduced channel widths and methods of fabricating same
JP2010506390A (en) * 2006-10-05 2010-02-25 インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Local collector implant structure and forming method for the heterojunction bipolar transistor

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