JPH0344420B2 - - Google Patents

Info

Publication number
JPH0344420B2
JPH0344420B2 JP61197208A JP19720886A JPH0344420B2 JP H0344420 B2 JPH0344420 B2 JP H0344420B2 JP 61197208 A JP61197208 A JP 61197208A JP 19720886 A JP19720886 A JP 19720886A JP H0344420 B2 JPH0344420 B2 JP H0344420B2
Authority
JP
Japan
Prior art keywords
buried layer
semiconductor integrated
semiconductor device
trench
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61197208A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6354741A (ja
Inventor
Baarushoni Ishitoan
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHINGIJUTSU JIGYODAN
Original Assignee
SHINGIJUTSU JIGYODAN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHINGIJUTSU JIGYODAN filed Critical SHINGIJUTSU JIGYODAN
Priority to JP19720886A priority Critical patent/JPS6354741A/ja
Publication of JPS6354741A publication Critical patent/JPS6354741A/ja
Publication of JPH0344420B2 publication Critical patent/JPH0344420B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
JP19720886A 1986-08-25 1986-08-25 半導体集積装置の製造方法 Granted JPS6354741A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19720886A JPS6354741A (ja) 1986-08-25 1986-08-25 半導体集積装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19720886A JPS6354741A (ja) 1986-08-25 1986-08-25 半導体集積装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6354741A JPS6354741A (ja) 1988-03-09
JPH0344420B2 true JPH0344420B2 (enrdf_load_stackoverflow) 1991-07-05

Family

ID=16370620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19720886A Granted JPS6354741A (ja) 1986-08-25 1986-08-25 半導体集積装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6354741A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02183552A (ja) * 1989-01-09 1990-07-18 Nec Corp 集積回路の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400715A (en) * 1980-11-19 1983-08-23 International Business Machines Corporation Thin film semiconductor device and method for manufacture

Also Published As

Publication number Publication date
JPS6354741A (ja) 1988-03-09

Similar Documents

Publication Publication Date Title
US4339767A (en) High performance PNP and NPN transistor structure
JPS6118147A (ja) 半導体デバイスの形成方法
US5882966A (en) BiDMOS semiconductor device and method of fabricating the same
JPS6348180B2 (enrdf_load_stackoverflow)
JP2666384B2 (ja) 半導体装置の製造方法
JPS6212660B2 (enrdf_load_stackoverflow)
JPH07106412A (ja) 半導体装置およびその製造方法
JPH0513535B2 (enrdf_load_stackoverflow)
JPH0344420B2 (enrdf_load_stackoverflow)
JPS6324672A (ja) 半導体装置の製造方法
JPS60241261A (ja) 半導体装置およびその製造方法
KR900003616B1 (ko) 반도체장치의 제조방법
JP3190144B2 (ja) 半導体集積回路の製造方法
JPH05121537A (ja) 半導体装置の製造方法
JP2000031489A (ja) 半導体装置の製造方法
JP3207561B2 (ja) 半導体集積回路およびその製造方法
JPH05226466A (ja) 半導体装置の製造方法
JPS62120040A (ja) 半導体装置の製造方法
JP2762449B2 (ja) 半導体装置の製法
JPS62213258A (ja) 半導体装置の製造方法
JPS6322065B2 (enrdf_load_stackoverflow)
JP2764988B2 (ja) 半導体装置
JPS6045037A (ja) 半導体装置の基板構造およびその製造方法
JPH081927B2 (ja) 半導体装置の基板構造の製造方法
JPH077794B2 (ja) 半導体集積回路装置の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees