JPH0338842A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0338842A
JPH0338842A JP1174982A JP17498289A JPH0338842A JP H0338842 A JPH0338842 A JP H0338842A JP 1174982 A JP1174982 A JP 1174982A JP 17498289 A JP17498289 A JP 17498289A JP H0338842 A JPH0338842 A JP H0338842A
Authority
JP
Japan
Prior art keywords
power supply
electric
source
supply parts
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1174982A
Other languages
Japanese (ja)
Inventor
Eiji Suematsu
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1174982A priority Critical patent/JPH0338842A/en
Publication of JPH0338842A publication Critical patent/JPH0338842A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors

Abstract

PURPOSE: To reduce a source inductance and a parasitic capacity between a source and a gate and to eliminate a defect to be caused when an electric-power supply part comes into contact with a wire by a method wherein a plurality of source electric-power supply parts are formed and the individual source electric-power supply parts are connected via a via hole.
CONSTITUTION: A semiconductor device is provided with a single gate electric- power supply part 1b; source electric-power supply parts 3b are connected to a package by using via holes 3c. Consequently, the source electric-power supply parts 3b can be installed away from the gate electric-power supply part 1b; in addition, the source electric-power supply parts 3b can be arranged so as not to surround the gate electric-power supply part 1b. Thereby, a defect, in reliability, to be caused when the electric-power supply parts 1b, 3b come into contact with a wire is eliminated, a parasitic capacity between a source and a drain is reduced, and a source inductance is reduced.
COPYRIGHT: (C)1991,JPO&Japio
JP1174982A 1989-07-06 1989-07-06 Semiconductor device Pending JPH0338842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1174982A JPH0338842A (en) 1989-07-06 1989-07-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1174982A JPH0338842A (en) 1989-07-06 1989-07-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0338842A true JPH0338842A (en) 1991-02-19

Family

ID=15988151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1174982A Pending JPH0338842A (en) 1989-07-06 1989-07-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0338842A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03232241A (en) * 1989-08-31 1991-10-16 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JP2009008363A (en) * 2007-06-29 2009-01-15 Mitsubishi Electric Corp Heat pump water heater
JP2009290098A (en) * 2008-05-30 2009-12-10 Fujitsu Ltd Semiconductor device and method of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03232241A (en) * 1989-08-31 1991-10-16 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JP2009008363A (en) * 2007-06-29 2009-01-15 Mitsubishi Electric Corp Heat pump water heater
JP4697477B2 (en) * 2007-06-29 2011-06-08 三菱電機株式会社 Heat pump water heater
JP2009290098A (en) * 2008-05-30 2009-12-10 Fujitsu Ltd Semiconductor device and method of manufacturing the same

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