JPH033242A - Formation of multilayer interconnection - Google Patents

Formation of multilayer interconnection

Info

Publication number
JPH033242A
JPH033242A JP13723489A JP13723489A JPH033242A JP H033242 A JPH033242 A JP H033242A JP 13723489 A JP13723489 A JP 13723489A JP 13723489 A JP13723489 A JP 13723489A JP H033242 A JPH033242 A JP H033242A
Authority
JP
Japan
Prior art keywords
forming
interconnections
layer wiring
multilayer
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13723489A
Other languages
Japanese (ja)
Other versions
JP2805840B2 (en
Inventor
Yukiyasu Sugano
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1137234A priority Critical patent/JP2805840B2/en
Publication of JPH033242A publication Critical patent/JPH033242A/en
Application granted granted Critical
Publication of JP2805840B2 publication Critical patent/JP2805840B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE: To prevent wire breaking which occurs between multilayer interconnections by forming multilayer interconnections in advance, and then forming a through hole which pierces upper layer wiring and leads to lower layer wiring, and next burying conductive material in this connection hole.
CONSTITUTION: In the multilayer interconnection forming method of forming multilayer interconnections 6 and 8 through interlayer insulating films 7 and 11 on a semiconductor substrate 1, after forming multilayer interconnections 6 and 8 in advance, a connection hole 12a, which pierces upper layer wiring 8 and leads to lower layer wiring 6, is formed, and next a tungsten metallic layer 14 is buried in the connection hole 12a. As a result, silicide reaction by heat treatment and volume shrinkage by this reaction, etc., cease to be done between the multilayer interconnections 6 and 8 and the conductive material 14, and wire breaking between the interlayer interconnections 6 and 8 and the conductive material 14 is prevented.
COPYRIGHT: (C)1991,JPO&Japio
JP1137234A 1989-05-30 1989-05-30 Semiconductor device and multilayer wiring forming method thereof Expired - Fee Related JP2805840B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1137234A JP2805840B2 (en) 1989-05-30 1989-05-30 Semiconductor device and multilayer wiring forming method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1137234A JP2805840B2 (en) 1989-05-30 1989-05-30 Semiconductor device and multilayer wiring forming method thereof

Publications (2)

Publication Number Publication Date
JPH033242A true JPH033242A (en) 1991-01-09
JP2805840B2 JP2805840B2 (en) 1998-09-30

Family

ID=15193918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1137234A Expired - Fee Related JP2805840B2 (en) 1989-05-30 1989-05-30 Semiconductor device and multilayer wiring forming method thereof

Country Status (1)

Country Link
JP (1) JP2805840B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582519A (en) * 1991-09-19 1993-04-02 Nec Corp Wiring for semiconductor device and manufacture thereof
JPH0653327A (en) * 1992-06-16 1994-02-25 Hyundai Electron Ind Co Ltd Contact of semiconductor element and its manufacture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057649A (en) * 1983-09-07 1985-04-03 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS62118543A (en) * 1985-11-18 1987-05-29 Nec Corp Semiconductor integrated circuit device
JPS63216361A (en) * 1987-03-04 1988-09-08 Nec Corp Multilayer interconnection structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057649A (en) * 1983-09-07 1985-04-03 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS62118543A (en) * 1985-11-18 1987-05-29 Nec Corp Semiconductor integrated circuit device
JPS63216361A (en) * 1987-03-04 1988-09-08 Nec Corp Multilayer interconnection structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582519A (en) * 1991-09-19 1993-04-02 Nec Corp Wiring for semiconductor device and manufacture thereof
JPH0653327A (en) * 1992-06-16 1994-02-25 Hyundai Electron Ind Co Ltd Contact of semiconductor element and its manufacture

Also Published As

Publication number Publication date
JP2805840B2 (en) 1998-09-30

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees