JPH03296263A - Semiconductor memory cell and its manufacture - Google Patents

Semiconductor memory cell and its manufacture

Info

Publication number
JPH03296263A
JPH03296263A JP9967990A JP9967990A JPH03296263A JP H03296263 A JPH03296263 A JP H03296263A JP 9967990 A JP9967990 A JP 9967990A JP 9967990 A JP9967990 A JP 9967990A JP H03296263 A JPH03296263 A JP H03296263A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
drain regions
connected
electrode
type source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9967990A
Other versions
JP2689682B2 (en )
Inventor
Masato Sakao
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To secure large capacity with small cell area by using a hollow and columnar conductor film as the constituent element of an accumulating electrode, and making use of the inwall and the external wall as capacitor parts.
CONSTITUTION: A memory cell comprises a MOS transistor and a capacitor part. The MOS transistor is composed of N-type source and drain regions 5 and 5a, which are formed at a P-type silicon substrate 1, and a gate electrode 4, which is stacked through a gate oxide film 3, and the gate electrode 4 is buried in the first interlayer insulating film 6, and a bit line 13 and the N-type source and drain regions 5 are connected through the contact hole 12 formed in the first interlayer insulating film 6. The capacitor part comprises the first conductor film 7 connected to the N-type source and drain regions 5a, the accumulating electrode consisting of the second hollow and columnar conductor film 8 connected to the sidewall of the first conductor film 7, the cell plate 10 being the opposite electrode, and the capacity insulating film 9 being the dielectric film insulating both.
COPYRIGHT: (C)1991,JPO&Japio
JP9967990A 1990-04-16 1990-04-16 A method of manufacturing a semiconductor memory cell Expired - Lifetime JP2689682B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9967990A JP2689682B2 (en) 1990-04-16 1990-04-16 A method of manufacturing a semiconductor memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9967990A JP2689682B2 (en) 1990-04-16 1990-04-16 A method of manufacturing a semiconductor memory cell

Publications (2)

Publication Number Publication Date
JPH03296263A true true JPH03296263A (en) 1991-12-26
JP2689682B2 JP2689682B2 (en) 1997-12-10

Family

ID=14253721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9967990A Expired - Lifetime JP2689682B2 (en) 1990-04-16 1990-04-16 A method of manufacturing a semiconductor memory cell

Country Status (1)

Country Link
JP (1) JP2689682B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04755A (en) * 1990-01-26 1992-01-06 Mitsubishi Electric Corp Semiconductor storage device and manufacture thereof
JPH0864783A (en) * 1994-05-11 1996-03-08 Hyundai Electron Ind Co Ltd Semiconductor device and manufacturing method therefor
US6097052A (en) * 1992-11-27 2000-08-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and a method of manufacturing thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6248062A (en) * 1985-08-28 1987-03-02 Sony Corp Memory cell
JPH01257365A (en) * 1988-04-07 1989-10-13 Fujitsu Ltd Semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6248062A (en) * 1985-08-28 1987-03-02 Sony Corp Memory cell
JPH01257365A (en) * 1988-04-07 1989-10-13 Fujitsu Ltd Semiconductor integrated circuit device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04755A (en) * 1990-01-26 1992-01-06 Mitsubishi Electric Corp Semiconductor storage device and manufacture thereof
US6097052A (en) * 1992-11-27 2000-08-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and a method of manufacturing thereof
US6586329B1 (en) 1992-11-27 2003-07-01 Mitsubishi Denki Kabshiki Kaisha Semiconductor device and a method of manufacturing thereof
JPH0864783A (en) * 1994-05-11 1996-03-08 Hyundai Electron Ind Co Ltd Semiconductor device and manufacturing method therefor

Also Published As

Publication number Publication date Type
JP2689682B2 (en) 1997-12-10 grant

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